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    TRANSISTOR MAKING CODE 2F Search Results

    TRANSISTOR MAKING CODE 2F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MAKING CODE 2F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RF MOSFET MODULE

    Abstract: MOSFET Amplifier Module H46S
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M9595M RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		RA03M9595M 952-954MHz RA03M9595M RF MOSFET MODULE MOSFET Amplifier Module H46S PDF

    transistor marking code H11S

    Abstract: H11S marking CODE H11S rf transistor mar 8 RA05H9595M RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.


    Original     		RA05H9595M 952-954MHz RA05H9595M 954-MHz transistor marking code H11S H11S marking CODE H11S rf transistor mar 8 RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w PDF

    ra01l8693ma

    Abstract: RF MOSFET MODULE ra MITSUBISHI marking example
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L8693MA RoHS Compliance , 865-928MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L8693MA is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		RA01L8693MA 865-928MHz RA01L8693MA RF MOSFET MODULE ra MITSUBISHI marking example PDF

    ra33h1516m1

    Abstract: RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


    Original     		RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene PDF

    RA60H1317M-101

    Abstract: RA60H1317M RA60H1317M1
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz RA60H1317M-101 RA60H1317M1 PDF

    ra33h1516m1

    Abstract: RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


    Original     		RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF PDF

    mosfet for power electronic

    Abstract: No abstract text available
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H3340M RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to


    Original     		RA30H3340M 330-400MHz RA30H3340M 30-watt 400-MHz mosfet for power electronic PDF

    RA30H3340M

    Abstract: RA30H3340M-101 mosfet amplifier MITSUBISHI LOT NO. CODE
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H3340M RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to


    Original     		RA30H3340M 330-400MHz RA30H3340M 30-watt 400-MHz RA30H3340M-101 mosfet amplifier MITSUBISHI LOT NO. CODE PDF

    F480M

    Abstract: rf mosfet power amplifier
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


    Original     		RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz F480M rf mosfet power amplifier PDF

    300 watt mosfet amplifier

    Abstract: RA30H4452M RA30H4452M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


    Original     		RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz 300 watt mosfet amplifier RA30H4452M-101 PDF

    RA30H3340M

    Abstract: RA30H3340M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H3340M RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to


    Original     		RA30H3340M 330-400MHz RA30H3340M 30-watt 400-MHz RA30H3340M-101 PDF

    RA33H1516M1

    Abstract: RA33H1516M1-101 VDD1015
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


    Original     		RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RA33H1516M1-101 VDD1015 PDF

    RF MOSFET MODULE

    Abstract: mitsubishi air conditioning RA30H1317M1
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M1 RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		RA30H1317M1 135-175MHz RA30H1317M1 30-watt 175-MHz RF MOSFET MODULE mitsubishi air conditioning PDF

    RA60H1317M1A

    Abstract: RA60H1317M1 RF MOSFET MODULE RF MODULE RA60H1317M1A rf transistor mar 8 MITSUBISHI marking example 174MHZ marking code transistor ND F1361 MAR 601 transistor
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to


    Original     		RA60H1317M1A 136-174MHz RA60H1317M1A 60-watt 174-MHz RA60H1317M1 RF MOSFET MODULE RF MODULE RA60H1317M1A rf transistor mar 8 MITSUBISHI marking example 174MHZ marking code transistor ND F1361 MAR 601 transistor PDF

    f953

    Abstract: H11S RA05H9595M RA05H9595M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.


    Original     		RA05H9595M 952-954MHz RA05H9595M 954-MHz f953 H11S RA05H9595M-101 PDF

    H11S

    Abstract: RA05H9595M RA05H9595M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.


    Original     		RA05H9595M 952-954MHz RA05H9595M 954-MHz H11S RA05H9595M-101 PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M9595 RA03M9595M 03M9595M RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		RA03M9595M 03M9595 952-954MHz RA03M9595M PDF

    MOSFET Amplifier Module

    Abstract: f953 945 mosfet
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M9595M RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		RA03M9595M 952-954MHz RA03M9595M MOSFET Amplifier Module f953 945 mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456767 1234567675 345676758 RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		952-954MHz RA03M9595M RA03M9595M PDF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-164MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 164MHz range. The battery can be connected directly to the drain of the


    Original     		RA33H1516M1 154-164MHz RA33H1516M1 33watt 164MHz PDF

    transistor 9527

    Abstract: 9544 transistor transistor 9529 RF MOSFET MODULE ra RA Series 9522 transistor transistor 1w 9533 RA01L8693MA 9542 mitsubishi rfid reader module circuit diagrams
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		RA01L9595M 952-954MHz RA01L9595M transistor 9527 9544 transistor transistor 9529 RF MOSFET MODULE ra RA Series 9522 transistor transistor 1w 9533 RA01L8693MA 9542 mitsubishi rfid reader module circuit diagrams PDF

    RA30H1317M

    Abstract: RA30H1317M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		RA30H1317M 135-175MHz RA30H1317M 30-watt 175-MHz 24Jan RA30H1317M-101 PDF

    RA13H8891MA-101

    Abstract: RA13H8891MA
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to


    Original     		RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz RA13H8891MA-101 PDF

    1651S

    Abstract: 2sC1651 transistor
    Text: 2SA821S 2SC1651S Transistors High-voltage Amplifier Transistor —210V, —30mA I 2SA821S •F e a tu re s 1 ) High breakdown voltage, (V cer = — 2 1 0 V ) 2 ) Complements the 2SC1651 S. •A b s o lu te maximum ratings ( T a = 2 5 t ) Parameter Collector-base voltage


    OCR Scan     		2SA821S 2SC1651S --210V, --30mA) 2SA821S 2SA821 2SC1651 O-220, 0Dlb713 O-220FN 1651S 2sC1651 transistor PDF