ra33h1516m1
Abstract: RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RA33H1516M1-101
RF MODULE CIRCUIT DIAGRAM
trichloroethylene
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R1240
Abstract: 2258 n LBN16202 filter 162MHz 2258 saw-filter 864
Text: 162MHz SAW Filter 24MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBN16202 www.sipatsaw.com Features For IF SAW filter Single-ended operation Ceramic Surface Mount Package Small size
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162MHz
24MHz
LBN16202
2002/95/EC)
12MHz)
10144MHz
18050/Div
10deg/Div
R1240
2258 n
LBN16202
filter 162MHz
2258
saw-filter 864
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ra33h1516m1
Abstract: RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RF power amplifier 10mW
RF MOSFET MODULE
RF MODULE CIRCUIT DIAGRAM for channel 4
MOSFET Amplifier Module
v 33w
marking transistor RF
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
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312 smd code
Abstract: CCPD-024
Text: CCPD-024 5x7mm SMD LVPECL Clock Oscillator 2.5 Volts Model CCPD-024 is a 162MHz to 312.500MHz LVPECL Clock Oscillator operating at 2.5Volts. The oscillator utilizes a High Q Third Overtone crystal design providing very low Jitter and Phase Noise. No Sub-Harmonics are present in
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CCPD-024
162MHz
500MHz
000Mhz
500Mhz
312 smd code
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RA33H1516M1
Abstract: RA33H1516M1-101 VDD1015
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RA33H1516M1-101
VDD1015
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RA35H1516M
Abstract: RA35H1516M-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to
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RA35H1516M
154-162MHz
RA35H1516M
40-watt
162-MHz
RA35H1516M-101
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TB218
Abstract: No abstract text available
Text: TB218 Freq:30-162Mhz, Vds=7.2Vdc, Idq=800mA TB218 Gain/Efficiency vs Frequency: Vds=7.2Vdc, Idq=800mA 50 50 45 45 40 40 35 35 Efficiency 30 Pout fixed at 3W Gain 25 25 20 20 15 15 10 10 5 5 20 30 40 50 60 70 80 90 100 110 Frequency MHz 120 130 140 150 160
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TB218
30-162Mhz,
800mA
190mil,
100nF
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gp 722
Abstract: 4006C Hokuriku Electric Industry GRM2162C1H200GD01E GRM2162C1H240GD01E GRM2162C1H680GD01E GRM2163C1H3R0CD01E GRM2164C1H2R0CD01E GRM216R11H102KA01E GRM216R11H223KA01E
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-036-A Date : 11th Jul 2006 Rev. date : 22 th Jun. 2010 Prepared : Y.Kosaka E.Akiyama Confirmed : S.Kametani RD00HVS1 RF characteristics data at f=150-162MHz,Vdd=7.2V SUBJECT: SUMMARY: This application note shows the RF characteristics Frequency Characteristics and Pin vs. Pout
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AN-VHF-036-A
RD00HVS1
150-162MHz
RD00HVS1:
150MHz
156MHz
162MHz
c72JB
CR1/10-241JB
gp 722
4006C
Hokuriku Electric Industry
GRM2162C1H200GD01E
GRM2162C1H240GD01E
GRM2162C1H680GD01E
GRM2163C1H3R0CD01E
GRM2164C1H2R0CD01E
GRM216R11H102KA01E
GRM216R11H223KA01E
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RF power amplifier 10mW
Abstract: RA33H1516M1 473 marking code transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RF power amplifier 10mW
473 marking code transistor
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
Oct2011
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amp circuit diagrams 400w
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the
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RA35H1516M
154-162MHz
RA35H1516M
40-watt
162-MHz
amp circuit diagrams 400w
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power mosfet
Abstract: LMP1603 all mosfet vhf power amplifier
Text: LMP1603 VHF SILICON MOSFET POWER AMPLIFIER MODULE 5.5W , 7.2V 150MHz — 162MHz FEATURES • HIGH OUTPUT POWER 5.5W min. • HIGH EFFICIENCY (> 38%) • LOW INTERMODULATION DISTORTION (< -25dBc) • OPERATION FROM 7.2V SUPPLY • INTEGRAL ENABLE / DISABLE CONTROL
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LMP1603
150MHz
162MHz
-25dBc)
600Hz
power mosfet
LMP1603
all mosfet vhf power amplifier
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Untitled
Abstract: No abstract text available
Text: IP00C502 IP00C502 Specifications LIVE IMAGE FORMAT CAPTURE FUNCTION RGB/YUV 4:4:4 36-bit @ 162MHz YUV4:2:2 24-bit @ 162 MHz Able to capture live image to SDRAM in RGB565 format and then transfer the captured data to serial flash LIVE IMAGE SIZE Horizontal sync signal interval: up to 4096 pixels
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IP00C502
IP00C502
36-bit
162MHz
24-bit
RGB565
PC166
16-bit
Horizo02
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RA35H1516M
Abstract: RA35H1516M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to
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RA35H1516M
154-162MHz
RA35H1516M
40-watt
162-MHz
RA35H1516M-101
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RF MOSFET MODULE
Abstract: RA35H1516M RA35H1516M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to
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RA35H1516M
154-162MHz
RA35H1516M
40-watt
162-MHz
RF MOSFET MODULE
RA35H1516M-01
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Untitled
Abstract: No abstract text available
Text: AURORA, IL 60505 PHONE 6 3 0 8 5 1 -4 7 2 2 FAX (63 0) 8 5 1 -5 0 4 0 www.conwin.com CRYSTAL CONTROLLED OSCILLATORS CONNOR W IN F IE L D ran SURFACE MOUNT 3.3V PECL EE94—51* SPECIFICATIONS Frequency Range E E 94-52* 13MHz to 162MHz 13MHz to 200MHz ±25ppm
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13MHz
162MHz
200MHz
25ppm
50ppm
20ppm
12KHz
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Untitled
Abstract: No abstract text available
Text: CRYSTAL CONTROLLED OSCILLATORS CONNOR W IN F IE L D AURORA, IL 60505 PHONE 630 851-4722 FAX (630) 851-5040 www.conwin.com SURFACE MOUNT 3.3V PECL EE94-51* SPECIFICATIONS E E 94-52* 13MHz to 162MHz Frequency Range 13MHz to 200MHz ±25ppm Frequency Stability
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EE94-51*
13MHz
162MHz
200MHz
25ppm
50ppm
20ppm
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Untitled
Abstract: No abstract text available
Text: • 0Ü17SDS fiTT ■ MITSUBISHI RF POWER MODULE M68739 * » * !,» #» ■ s re ' 154-162MHz, 9.6V, 7W FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN : P in : RF INPUT @VGG : G ATE BIAS SUPPLY @ VDD : DRAIN BIAS SUPPLY PO : RF OUTPUT
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17SDS
M68739
154-162MHz,
20CAII
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S-AV10L
Abstract: S-AV7
Text: - 324 - Í4 £ «TXL EJ £ [m in ] ÎK'J /t 5R 1t I S - A V 6 h 7 y -Sx ? , 2 x T - ->'o VHF 154 — 162MHz % : r ^ iíljí^ o ä 25W FM 16. 0 V c o n (V) 16. 0 Po(W) 300. 0 PG(dß) Te (min) (°C)* -30. 0 V t (%) Tc(tnax) (°C)* 100.0 À ^ I V S W R i^ jîd j^ o
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162MHz)
TcS90Â
200mW
148MHz)
-33dB
S-AV10L
175MHz)
155MHz,
S-AV7
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68739R 154-162MHz, 9.6V, 7W FM PORTABLE RADIO OUTLINE DRAWING D im ensions in m m PIN : Po : RF O U TP U T ©VDD : DRAIN BIAS SUPPLY VGG : G ATE BIAS SU PPLY © P in : RF IN PU T © G N D : FIN H47 ABSOLUTE MAXIMUM RATINGS Tc = 25 “C unless otherwise noted
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M68739R
154-162MHz,
162MHz,
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TA 8515 F
Abstract: No abstract text available
Text: CRYSTAL CONTROLLED OSCILLATORS SURFACE MOUNT 3.3V PECL CONNOR WINFIELD AURORA, IL 60505 PHONE 630 851 -4 7 2 2 FAX (630) 851-5 0 4 0 EE94-51* SPECIFICATIONS EE94-52* 13MHz to 162MHz Frequency Range Frequency S tability ±50ppm D n + m .t D u ty 13MHz to 162MHz
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EE94-51*
13MHz
162MHz
25ppm
EE94-52*
50ppm
EE94-53*
EE94-54*
TA 8515 F
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25X1
Abstract: M68739R
Text: MITSUBISHI RF POWER MODULE M68739R 154-162MHz, 9.6V, 7W FM PORTABLE RADIO OUTLINE DRAWING D im en sion s in mm PIN : P0 VD D ®VGG © P in ©GND : : : : : RF OUTPUT DRAIN BIAS SUPPLY GATE BIAS SUPPLY RF INPUT FIN H47 ABSOLUTE MAXIMUM RATINGS T c = 2 5 ‘C unless otherw ise noted
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M68739R
154-162MHz,
162MHz,
162MHz
54MHz
62MHz
25X1
M68739R
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Untitled
Abstract: No abstract text available
Text: ^ - 0 G1 7 5 5 2 ^73 • MITSUBISHI RFPOWER MODULE M57785M 150-162MHz, 7.2V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM © PIN : © P in RF INPU T ®VCC1 1st. DC SUPPLY ®VB B BASE BIAS SUPPLY ® VC C 2
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M57785M
150-162MHz,
GG17254
150MHz
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