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    RA30H4452M Search Results

    RA30H4452M Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RA30H4452M Mitsubishi RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO Original PDF
    RA30H4452M Mitsubishi 440-520MHz 30W 12.5V MOBILE RADIO Original PDF
    RA30H4452M Mitsubishi Silicon MOS FET Power Amplifier, 440 - 520 MHz 30 W FM MOBILE RADIO Scan PDF
    RA30H4452M-01 Mitsubishi 440-520MHz 30W 12.5V MOBILE RADIO Original PDF
    RA30H4452M-101 Mitsubishi RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO Original PDF
    RA30H4452M-E01 Mitsubishi 440-520MHz 30W 12.5V MOBILE RADIO Original PDF

    RA30H4452M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RA30H4452M

    Abstract: RA30H4452M-01 RA30H4452M-E01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


    Original     		PDF RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz RA30H4452M-01 RA30H4452M-E01

    Untitled

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz

    300 watt mosfet amplifier

    Abstract: RA30H4452M RA30H4452M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


    Original     		PDF RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz 300 watt mosfet amplifier RA30H4452M-101

    RA30H4452M

    Abstract: RA30H4452M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


    Original     		PDF RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz RA30H4452M-101

    RA30H4452M

    Abstract: RA30H4452M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


    Original     		PDF RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz RA30H4452M-101

    Untitled

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA30H4452M RA30H4452M 30-watt 520-MHz

    F480M

    Abstract: rf mosfet power amplifier
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


    Original     		PDF RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz F480M rf mosfet power amplifier

    RA60H1317M1

    Abstract: RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-GEN-026-H Date : 18th Apr. 2003 Rev. date : 22th.Jun. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR


    Original     		PDF AN-GEN-026-H RA30H4452M 440-520MHz, 200pF, RA60H1317M1 RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M

    RD100HHF1

    Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
    Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V


    Original     		PDF 30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1

    RA60H1317M1

    Abstract: C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-GEN-026-G Date : 18th Apr. 2003 Rev. date : 7th Jan. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR


    Original     		PDF AN-GEN-026-G RA30H4452M 440-520MHz, 200pF, RA60H1317M1 C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M

    RM15TB-H

    Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
    Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;


    Original     		PDF CM400HA CM600HA CM600HB CM100DY CM150DY CM200DY CM300DY CM400DY CM600DY RM15TB-H RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A

    walkie-talkie

    Abstract: sirf 4 mitsubishi rf sirf sirf 3 reliability RA30H4452M MITSUBISHI example
    Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-030-B Date : 16th June. 2003 Prepared : T.Kajo,T.Ohkawa Confirmed : Issue B: H.Nakao ht 27 Oct. 2003 T.Ohkawa SUBJECT: Reliability concept for SiRF Products Conclusion: products. This application note shows the reliability concept and reliability level for SiRF


    Original     		PDF AN-GEN-030-B AN-GEN030 490MHz walkie-talkie sirf 4 mitsubishi rf sirf sirf 3 reliability RA30H4452M MITSUBISHI example

    RA60H1317M1

    Abstract: FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M
    Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-026-E Date : 18th April 2003 Rev. date : 15th March ‘05 Prepared : K. Kajiwara Confirmed : T. Okawa SUBJECT: ELECTRO STATIC SENSITIVITY FOR MITSUBISHI RF POWER MODULE RA* series


    Original     		PDF AN-GEN-026-E AN-GEN-026-E RA30H4452M 440-520MHz, 200pF, RA60H1317M1 FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M

    f480-1

    Abstract: RA30H4452M mos 4801
    Text: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA30H4452M Silicon MOS FET Power Amplifier, 440-520MHz 30W FM MOBILE RADIO O U TLIN E DRAW ING Dimensions in mm 66.0 +/-0.5 60.0 +/-0.5 2.3 +/-Ö.3 MAXIMUM RATINGS


    OCR Scan     		PDF RA30H4452M 440-520MHz 25deg 50ohm ZI-50ohm f480-1 RA30H4452M mos 4801