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    TRANSISTOR D 467 Search Results

    TRANSISTOR D 467 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 467 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN569

    Abstract: MTY14N100E 340G
    Text: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY14N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 1000 VOLTS


    Original     		MTY14N100E/D MTY14N100E MTY14N100E/D* AN569 MTY14N100E 340G PDF

    Untitled

    Abstract: No abstract text available
    Text: VRF2933 VRF2933MP 50V, 300W, 150MHz RF POWER VERTICAL MOSFET D The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original     		VRF2933 VRF2933MP 150MHz VRF2933 30MHz, SD2933 PDF

    BCP4672

    Abstract: 4672 transistor bcp46 60V transistor npn 2a
    Text: BCP4672 2A, 60V NPN Epitaxial Silicon Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  SOT-89 The BCP4672 is designed for low frequency amplifier applications. 4 MARKING 4672 


    Original     		BCP4672 OT-89 BCP4672 BCP4672-A BCP4672-B 500mA 500mA, 100MHz width380s, 4672 transistor bcp46 60V transistor npn 2a PDF

    415v Three phase scr CIRCUIT DIAGRAM

    Abstract: HP-3465A Q110 tb2910 10KW 415V 3 phase phase angle control Lambda LC Schematic C144 transistor 30T100 IC104 IC17136
    Text: INSTRUCTION MANUAL FOR 83-467-001 Revision B MODEL SERIAL NUMBER LAMBDA EMI 405 ESSEX ROAD, NEPTUNE, NJ 07753 TEL: 732 922-9300 FAX: (732) 922-9334 TCR 3 Phase OPERATING SYSTEM MANUAL TABLE OF CONTENTS I. GENERAL INFORMATION 1.1 1.2 II. 3.2 3.3 6 6 6 TURN-ON CHECK OUT PROCEDURE


    Original     		4T900 6T900 30T500 415v Three phase scr CIRCUIT DIAGRAM HP-3465A Q110 tb2910 10KW 415V 3 phase phase angle control Lambda LC Schematic C144 transistor 30T100 IC104 IC17136 PDF

    1000w inverter PURE SINE WAVE schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
    Text: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design


    Original     		PDF

    2n3055 motorola

    Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
    Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,


    Original     		1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046 PDF

    8060 transistor

    Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45
    Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,


    Original     		8060-1G11 8060-1G6 MIL-S-83502/2 MIL-S-83502/5. 8060 transistor 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45 PDF

    "CHAPTER 1 Introduction to Power Semiconductors"

    Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
    Text: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General


    Original     		PDF

    Power Semiconductor Applications Philips Semiconductors

    Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
    Text: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management


    Original     		PDF

    ld1014d

    Abstract: Lovoltech pn diode POWERJFET
    Text: PWRLITE LD1014D High Performance N-Channel POWERJFETTM with PN Diode Features Description ™ ™ ™ ™ ™ ™ ™ The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low


    Original     		LD1014D ld1014d Lovoltech pn diode POWERJFET PDF

    7B468

    Abstract: 7B465 76465 75469 sn75466 sn75465
    Text: SN75465 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS D 2 6 2 5 , DECEMBER 1 9 7 6 -REVISED SEPTEMBER 1 9 8 6 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRA YS 500-mA Rated Collector Current Single Output D OR N P A C K A G E (TO P V IEW ! • High-Voltage Outputs . . . 100 V


    OCR Scan     		SN75465 SN75469 500-mA ULN2005A, ULN2001 ULN2002A, ULN2003A, ULN2004A, SN7S465 7B468 7B465 76465 75469 sn75466 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 Q020bfl5 4 ■ PowerMOS transistor Fast Recovery Diode FET BUK637-600A BUK637-600B BUK637-600C T ' - 3 cM £ ' _ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		Q020bfl5 BUK637-600A BUK637-600B BUK637-600C BUK637 reve637-600C T-39-15 IB-01 IE-02 IE-03 PDF

    transistor NEC D 822 P

    Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
    Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA


    OCR Scan     		2SC5336 2SC3357 transistor NEC D 822 P transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic PDF

    transistor NEC D 587

    Abstract: de 535
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 800T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAW INGS


    OCR Scan     		UPA800T 2SC4228) uPA800T transistor NEC D 587 de 535 PDF

    613 GB 123 CT

    Abstract: transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA803T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD /xPA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAW INGS (U n it: m m ) FEATURES • H igh fT


    OCR Scan     		uPA803T /xPA803T 2SC4570) 613 GB 123 CT transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de PDF

    Untitled

    Abstract: No abstract text available
    Text: 3QE D • 7 ^ 2 3 7 ODBTÌMS S C S -T H O M S O N * J Æ , 1 ■ s 6 s"!h o k o n R a m m g iiL iiC T @ iia D s _ S G S P 3 1 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP311 Vpss 100 V ^DS on) 0.3 ß •d 11 A • HIGH SPEED SWITCHING APPLICATIONS


    OCR Scan     		SGSP311 T-39-1T PDF

    4216td

    Abstract: 10peration SMP3N50F
    Text: SMP3N50F fT S iE c o n ix JLm in c o r p o r a te d N-Channel Enhancement Mode Transistor Fast Reverse Recovery TO -220A B TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d trr (V) (ft) (A) (n s ) 500 3.0 2.5 250 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE


    OCR Scan     		SMP3N50F -220A 4216td 10peration SMP3N50F PDF

    RZ3135B50W

    Abstract: No abstract text available
    Text: - 3 3 ^ 3 RZ3135B50W PHILIPS INTERN A T I O N A L SbE D • 711DaEt. OOHbLOS 124 * P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar e p ita xia l m icrow ave p o w e r tran sisto r, intended fo r use in a common-base class-C broadband pulse p ow er a m p lifie r w ith a freq u e n cy range o f 3.1 to 3.5 GHz.


    OCR Scan     		RZ3135B50W 711Dflat T-33-13 711002b 004bb0b RZ3135B50W PDF

    Sumida CD54-220

    Abstract: X752 transistor tic 2260 MAX752cpa
    Text: 19-4672; Rev 1;7/92 y n / i x i / n +5V/Adjustable Step-Up Current-M ode DC-DC Converters Features G e n e r a l D e s c rip tio n ♦ 200mA Load Currents Guaranteed with No External MOSFET The MAX731/MAX752 use current-mode pulse-width modulation PWM controllers to provide precise output


    OCR Scan     		731/M 200mA 170kHz MAX731) MAX752) 16-Pin MAX731 MAX752 Sumida CD54-220 X752 transistor tic 2260 MAX752cpa PDF

    DG441CJ

    Abstract: No abstract text available
    Text: 19-4677, Rev 2: 7/96 y k i> j x i> k i Improved, Quad, S P S T Analog Sw itches _ Genera! Description Maxim's redesigned DG441/DG442 analog switches now feature on-resistance matching 4ft max between switches and guaranteed on-resistance flatness over the


    OCR Scan     		DG441/DG442 DG441 DG441CJ PDF

    d2625

    Abstract: TRANSISTOR D2625 75469 75466 75468 SLRS023A-D2625 75467 sn75466
    Text: SN75466 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023A- P2625, DECEMBER 1976 - REVISED APRIL 1993 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • 500-mA Rated Collector Current Single Output • High-Voltage Outputs. . . 100 V • Output Clamp Diodes


    OCR Scan     		SN75466 SN75469 SLRS023A- P2625, 500-mA ULN2001A, ULN2002A, ULN2003A, ULN2004A, SN75468, d2625 TRANSISTOR D2625 75469 75466 75468 SLRS023A-D2625 75467 PDF

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP LB1660N/I661, 1664N.1665 1EE. D I 7 cn 7 Q ? t . 0ÜG3413 T-<£2-iV^ A * 3ooia 3054A Monolithic Digital IC B ru sh less M otor Driver 2551A Applioations 2-phase unipolar brushless motor ex. DC brushless fan motor drivers Features and Functions


    OCR Scan     		LB1660N/I661, 1664N G3413 LB1660N 1664N) LB1661 LB1660 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN 5249 Thick Film Hybrid 1C _STK401-250 S A ßro AF Power Amplifier Split Power Supply (30W + 30W min, THD = 0.08%) Overview Package Dimensions T he S T K 401-250 is a 2-channel audio pow er am plifier IC that supports 6/3£2 output load im pedances. It is fully pin


    OCR Scan     		STK401-250 STK400-X00 STK401-X00 STK401-250] 0021D1D PDF

    transistor eft 323

    Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 bauelemente DDR OA1180 TRANSISTOR BC 187
    Text: S E R V I C E - MI TTEILUNGEN r a d i o -television DATUM: Juli 1973 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN AUSGABE: 8/73 Neu« Import - Geräte LUDWIK und JUBILAT - Rundfunkempfänger aus der VR Polen Aua der VR Polen werden o.g. Rundfunkempfänger importiert. Beide Ge­


    OCR Scan     		PDF