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Rochester Electronics LLC MTY14N100E N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTY14N100E	Bulk			60	1 - 10 - 100 $5.05 1000 $5.05 10000 $5.05	Buy Now
Aptina Imaging MTY14N100E Trans MOSFET N-CH Si 1KV 14A 3-Pin(3+Tab) TO-264
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Verical	MTY14N100E		1,895		64	1 - 10 - 100 $5.7125 1000 $5.1625 10000 $5.1625	Buy Now
Motorola Semiconductor Products MTY14N100E TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,14A I(D),TO-264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MTY14N100E		13			1 $17.3507 10 $15.4228 100 $15.4228 1000 $15.4228 10000 $15.4228	Buy Now
	MTY14N100E		4			1 $9.765 10 $4.8825 100 $4.8825 1000 $4.8825 10000 $4.8825	Buy Now
onsemi MTY14N100E 14A, 1000V, 0.8ohm, N-Channel Power MOSFET, TO-264AA '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	MTY14N100E		1,900		1	1 $4.86 10 $4.86 100 $4.57 1000 $4.13 10000 $4.13	Buy Now

MTY14N100E Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MTY14N100E		On Semiconductor	TMOS E-FET Power Field Effect Transistor		Original	PDF
MTY14N100E		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
MTY14N100E		Motorola	TMOS Power FET 14 Amp 1000 Volts		Scan	PDF
MTY14N100E/D		On Semiconductor	TMOS POWER FET 14 AMPERES 1000 VOLTS		Original	PDF
MTY14N100E-D		On Semiconductor	TMOS E-FET Power Field Effect Transistor N-Channel		Original	PDF
MTY14N100EG		On Semiconductor	Transistor Mosfet N-CH 1000V 14A 3TO-264 RAIL		Original	PDF

MTY14N100E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AN569 Abstract: MTY14N100E 340G Text: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY14N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 1000 VOLTS	Original	PDF	MTY14N100E/D MTY14N100E MTY14N100E/D* AN569 MTY14N100E 340G
Untitled Abstract: No abstract text available Text: MTY14N100E TMOS E−FET. Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with fast recovery	Original	PDF	MTY14N100E MTY14N100E/D
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	PDF	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	PDF	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
HC 148 TRANSISTOR Abstract: AN569 MTY14N100E Text: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TY14N 100E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high	OCR Scan	PDF	MTY14N100E/D Speci100E 340G-02 O-264 HC 148 TRANSISTOR AN569 MTY14N100E
Untitled Abstract: No abstract text available Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r's D ata S heet M TY14N100E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high	OCR Scan	PDF	MTY14N100E