lovoltech
Abstract: LVS2100N LVS2001N POWERJFET
Text: April 2005 Preliminary www.lovoltech.com LVS2100N N-Channel PowerJFET® Product Summary VDS RDS ON @ 0 VGS Features Typical Max 11.5 24 14 • Device is fully on @ VGS = 0V. • Bidirectional blocking when off (no body diode) V mΩ Applications Pinouts
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Lovoltech
Abstract: LD1010DA TO252-DPAK package POWERJFET pn diode LD1010D
Text: PWRLITE LD1010DA High Performance N-Channel POWERJFETTM with PN Diode Features Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low
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LD1010DA
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LD1010DA
TO252-DPAK package
POWERJFET
pn diode
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Lovoltech LU1014D
Abstract: LU1014D LD1014D Lovoltech LU1014 pn diode POWERJFET ld1014
Text: PWRLITE LU1014D High Performance N-Channel POWERJFETTM with PN Diode Features Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low
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LU1014
pn diode
POWERJFET
ld1014
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pn diode
Abstract: POWERJFET A 673 C2 transistor Lovoltech LD1010DA LU1010DA LD1010D jfet transistor LU1010D
Text: PWRLITE LU1010DA High Performance N-Channel POWERJFETTM with PN Diode Features Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low
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LU1010DA
LD1010DA
pn diode
POWERJFET
A 673 C2 transistor
Lovoltech
LD1010DA
LU1010DA
LD1010D
jfet transistor
LU1010D
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lovoltech
Abstract: LVS2201N
Text: April 2005 Preliminary www.lovoltech.com LVS2201N Dual N-Channel PowerJFET® Product Summary Features Typical Max 15.5 24 18 VDS RDS ON @ 0 VGS • Device is fully on @ VGS = 0V. • Bidirectional blocking when off (no body diode) V mΩ Applications Pinouts
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ld1014d
Abstract: Lovoltech pn diode POWERJFET
Text: PWRLITE LD1014D High Performance N-Channel POWERJFETTM with PN Diode Features Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low
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pn diode
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ad 1204
Abstract: TO252-DPAK package Lovoltech TO252-DPAK LD1106S POWERJFET LD103SG6 026E-02 J-FET TRANSISTOR
Text: PWRLITE LD1106S High Performance N-Channel POWERJFETTM with Schottky Diode Features Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low
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TO252-DPAK package
Lovoltech
TO252-DPAK
LD1106S
POWERJFET
LD103SG6
026E-02
J-FET TRANSISTOR
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Lovoltech
Abstract: PN 1204 pn diode LU1004D LD103SG6 POWERJFET 028E-02 5E02 A 673 C2 transistor
Text: PWRLITE LU1004D High Performance N-Ch Vertical POWERJFETTM with PN Diode Features Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low
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LU1004D
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PN 1204
pn diode
LU1004D
LD103SG6
POWERJFET
028E-02
5E02
A 673 C2 transistor
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Lovoltech
Abstract: POWERJFET LD1010D 5E02 A 673 C2 transistor ld1010d.rev
Text: PWRLITE LD1010D High Performance N-Channel POWERJFETTM with PN Diodes Features Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low
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LD1010D
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5E02
A 673 C2 transistor
ld1010d.rev
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Lovoltech
Abstract: TO252-DPAK TO252-DPAK package LD1003S POWERJFET
Text: PWRLITE LD1003S High Performance N-Channel POWERJFETTM with Schottky Diode Features Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low
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LD1003S
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TO252-DPAK
TO252-DPAK package
LD1003S
POWERJFET
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Lovoltech
Abstract: POWERJFET LS1105 jfet transistor LVT103 lovoltech no diode jfet application LVT101 LVTS101 LVTS101N
Text: PWRLITE-LS1105N Enhanced N-Channel Power JFET Transistor, Trench Technology Trench Power JFET with low threshold voltage Vth. Device fully “ON” with Vgs = 0.7V Optimum for “High Side” Buck and DC-DC Converters Low Rg and low Cds for high speed switching
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PWRLITE-LS1105N
LS1105N
Lovoltech
POWERJFET
LS1105
jfet transistor
LVT103
lovoltech no diode
jfet application
LVT101
LVTS101
LVTS101N
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