TRANSISTOR C 3206 Search Results

L-Band 1200-1400 MHz

Contextual Info: MICROWAVE POWER TRANSISTOR PH1214-30 • 5t,422Q5 oaaaaat, mto n/A-con p M M M /A / A -C - C iO M P H I. I N C . b3E D o h Am hap The PHI 214-30 is an internally matched high power transistor designed for long pulse or CW applications from 1200 to 1400 MHz. Internal matching both at the

Rogers 6010.5

Abstract: epco 6010.5 T-33-J-S
Contextual Info: n/A-con p h o 2 5E Sb4250S D QaDDSS? 311 MAP y p o MICROWAVE PULSED POWER TRANSISTOR PH1090 - 600S REV. PREUMINARY » M /A -C C M/A-COM PHI, INC. T-33'JS DESIGN CHARACTERISTICS • • • • • • Short Pulse Operation New High Efficiency Transistor Geometry

Contextual Info: AjtÁ CW Power Transistor PH2323-6 Preliminary 6.0 Watts, 2.30 GHz Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors

TRANSISTOR zo 109 ma

Abstract: transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856
Contextual Info: Linear Accelerator Pulsed Power Transistor PH2856-22 22 Watts, 2.856 GHz, 12 jlis Pulse, 10% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • High Efficiency Interdigitated Geometry

transistor c 3206

Abstract: transistor j7
Contextual Info: Afa R adar Pulsed Power Transistor PH0404-7EL 7 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Emitter Configuration • Broadband Class C Operation • Reliable Fishbone Geometry

T4 0450

Abstract: transistor j8
Contextual Info: Radar Pulsed Power Transistor A ß PH0404-30EL 30 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry

transistor yb

Abstract: M220S transistor t 04 27
Contextual Info: Afa Radar Pulsed Power Transistor PH0404-1OOEL 100 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry

omni spectra sma

Abstract: transistor n03 PH2856
Contextual Info: Linear Accelerator Pulsed Power Transistor PH2856-3 3 Watts, 2.856 GHz, 12 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry

transistor 355

Abstract: SHM-2E CC 1215
Contextual Info: Afa Avionics Pulsed Power Transistor PH0912-2.5 Preliminary 2.5 Watts, 960-1215 MHz, 7 ¿is Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

Contextual Info: Ma Avionics Pulsed Power Transistor PH0912-20 Preliminary 20 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

VCO 1.4 GHz

Contextual Info: PH3135-80M Radar Pulsed Power Transistor Preliminary 80 Watts, 3.10-3.50 GHz, 100 us Pulse, 10% Duty Features • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry

MAPHST0034

Abstract: MAPHST MAPHS VCC36 9-GHz c 129 transistor
Contextual Info: MAPHST0034 RADAR PULSED POWER TRANSISTOR 129 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY Datasheet 032803 ECRIEE OUTLINE DRAWING FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry

VCC36

Contextual Info: Ajfa Radar Pulsed Power Transistor PH2729-120M Preliminary 120 Watts, 2.70-2.90 GHz, 100 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

35 W 960 MHz RF POWER TRANSISTOR NPN

Abstract: TRANSISTOR 618 J1 TRANSISTOR 1090 35 W 960 MHz MAPRST0912-350 1215 transistor j08
Contextual Info: MAPRST0912-350 AVIONICS PULSED POWER TRANSISTOR 350 Watts, 960 - 1215 MHz, 10 s Pulse Width, 10% Duty Cycle Preliminary Specification, Rev 02/03/2004 FEATURES OUTLINE DRAWING ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation

Contextual Info: Aß Avionics Pulsed Power Transistor PH0912-5 Preliminary 5 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

yb 0d

Contextual Info: Aß Avionics Pulsed Power Transistor PH 1090-400S Preliminary 400 Watts, 1030-1090 MHz, 10 [is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

Contextual Info: A$A Avionics Pulsed Power Transistor PH 1090-30S Preliminary 30 Watts, 1030-1090 MHz, 10 |is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

PH2729-25M

Abstract: j178 VCC36
Contextual Info: PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY M/A-COM PHI, INC. OUTLINE DRAWING FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry

VCC36

Contextual Info: PH2729-180M Radar Pulsed Power Transistor Preliminary 180 Watts, 2.70-2.90 GHz, 100 |is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry

Contextual Info: A/jÙi Avionics Pulsed Power Transistor PH 1090-75S Preliminary 75 Watts, 1030-1090 MHz, 10 is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

PT 4107

Abstract: transistor tt 2222 Rogers 6010.5 TT 2222
Contextual Info: M / A -C O fl P E S Z 1> H 0 SbMSEGS GOODSI^ bis • MAP sm e MICROWAVE PULSED POWER TRANSISTOR PH9612 - 75 REV. PRELIMINARY * & u / A -r < M/A-COM PHI, INC. T-33-/3 DESIGN CHARACTERISTICS • High Efficiency Transistor Geometry • Broadband 960 • 1215 MHz Operation

Contextual Info: Aß MOSFET P o w er Transistor C R 2 6 120D Preliminary 120 Watts, 850 - 960 MHz Features • • • • • • • • Outline Drawing N-Channel Enhancement Mode Device Cellular Base Station Applications 120 Watts C W Common Source Gemini Configuration

transistor c 3206

Abstract: TRANSISTOR 2SC Audio Amplifier Applications 2SC3206
Contextual Info: SILICON NPN TRANSISTOR TRIPLE DIFFUSED TYPE PCT PROCESS 2SC 3206 ( A PPLIC A TIO N S ) • Black and White TV Video Output Applications. • High Voltage Switching A pplications. ■ D riv e r Stage Audio A mplifier Applications. C FEATU RES • High VCEO * VcEO — 150 V

J-205

Abstract: transistor j8 PH1600
Contextual Info: Afa Satellite C om m unications Power Transistor PH 1600-7.5 7.5 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing CW Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System