PH1090 Search Results

PH1090-550S

Contextual Info: Avionics Pulsed Power Transistor 550 Watts, 1030-1090 MHz, 10µs Pulse, 1 % Duty PH1090-550S PH1090-550S Avionics Pulsed Power Transistor - 550 Watts, 1030-1090 MHz, 10µs Pulse, 1% Duty 1 Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications

a 103 m Transistor

Abstract: A 103 TRANSISTOR transistor PD j6 1030 mhz transistor j6 PH1090-75L f103 TRANSISTOR 75
Contextual Info: PH1090-75L AVIONICS PULSED POWER TRANSISTOR 75 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY M/A-COM PHI, INC. FEATURES OUTLINE DRAWING • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration

NPN 350W

Contextual Info: PH1090-350L Avionics Pulsed Power Transistor 350W, 1090 MHz, 250µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: PH1090-175L Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)80â V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)375# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)13mx @V(CBO) (V) (Test Condition)45

Contextual Info: PH1090-80L Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)80â V(BR)CBO (V) I(C) Max. (A)5.2 Absolute Max. Power Diss. (W)180# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)6.3mx @V(CBO) (V) (Test Condition)45

Contextual Info: Avionics Pulsed Power Transistor PH1090-800S Preliminary 800 Watts, 1030-1090 MHz, 10 |is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

Rogers 6010.5

Abstract: epco 6010.5 T-33-J-S
Contextual Info: n/A-con p h o 2 5E Sb4250S D QaDDSS? 311 MAP y p o MICROWAVE PULSED POWER TRANSISTOR PH1090 - 600S REV. PREUMINARY » M /A -C C M/A-COM PHI, INC. T-33'JS DESIGN CHARACTERISTICS • • • • • • Short Pulse Operation New High Efficiency Transistor Geometry

PH1090-700B

Abstract: Mode-S transistor
Contextual Info: Avionics Pulsed Power Transistor, 700 Watts, 12/10/01 1.03-1.09 GHz, 32 µS Pulse, 2% Duty PH1090-700B Rev. 0 Features Q Q Q Q Q Q Q Q Absolute Maximum Ratings @ 25 °C Designed for Mode-S IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration

Contextual Info: PH1090-350L Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)80â V(BR)CBO (V) I(C) Max. (A)17 Absolute Max. Power Diss. (W)750 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)25mx @V(CBO) (V) (Test Condition)45

Contextual Info: PH1090-6S Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)70â V(BR)CBO (V) I(C) Max. (A)430m Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.5mx @V(CBO) (V) (Test Condition)40

Contextual Info: PH1090-800S Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)80â V(BR)CBO (V) I(C) Max. (A)37 Absolute Max. Power Diss. (W)2.5k# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)25m @V(CBO) (V) (Test Condition)45

0 9 0 M

Contextual Info: a n A M P com pany Avionics Pulsed Power Transistor, 175W, 250ns Pulse, 10% Duty 1030 -1090 MHz PH1090-175L Features • N PN S ilic o n M ic ro w a v e P o w e r T ran sisto r uu 10 ^ • C o m m o n B a se C o n fig u r a tio n • B ro a d b a n d C la ss C O p e r a tio n

Contextual Info: PH1090-175L Avionics Pulsed Power Transistor 175W, 1090 MHz, 250µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

PH1090-550S

Contextual Info: PH1090-550S Avionics Pulsed Power Transistor 550W, 1090 MHz, 10µs Pulse, 1% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

transistor 1047

Abstract: transistor 931 transistor 1047 voltage rating 1090 ATC100A PH1090-550S transistor 1207 l0111
Contextual Info: PH1090-550S M/A-OOM Avionics Pulsed Power Transistor - 550 Watts, 1030-1090 MHz, 10 is Pulse, 1% Duty /MOCOVI ^ M RF & Microwave Products Outline Drawing1 Description M /A -C O M ’ s P H 1090-550S is a silicon bipolar NPN transistor intended for use in L-band, 1.2 - 1.4 GHz avionics equipment

4604

Abstract: simple circuit diagram of IC 567 PH1090 "Lowpass Filters" 567 tone ic 4604 Philsar Electronics rf digital data modulators ic Delta Electronics rf digital modulators ic
Contextual Info: PRELIMINARY April 1997 PH1090 PH1090 Integrated Delta Sigma Dual Digital to Analog Converters Features The Philsar PH1090 contains dual integrated DACs capable of 10 bit performance from DC to 200 kHz bandwidth. 8 bit performance is available to 600 kHz bandwidth.

pin configuration of ic 8088

Abstract: PH1090-350L
Contextual Info: Avionics Pulsed Power Transistor 350 Watts, 1030-1090 MHz, 250µs Pulse, 10 % Duty PH1090-350L PH1090-350L Avionics Pulsed Power Transistor - 350 Watts, 1030-1090 MHz, 250µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor

1030 PULSED 32uS MODE-S

Abstract: 700 v power transistor
Contextual Info: PH1090-700B Avionics Pulsed Power Transistor—700 Watts, 1.03-1.09 GHz, 32µs Pulse, 2% Duty Features • • • • • • • • • Outline Drawing1 Designed for Mode-S IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration

Contextual Info: PH1090-75L Avionics Pulsed Power Transistor 75W, 1030-1090 MHz, 250µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: PH1090-150S Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)80â V(BR)CBO (V) I(C) Max. (A)6.2 Absolute Max. Power Diss. (W)400# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)4.5mx @V(CBO) (V) (Test Condition)45

Contextual Info: PH1090-30S Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)70â V(BR)CBO (V) I(C) Max. (A)2.1 Absolute Max. Power Diss. (W)75# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)3.0mx @V(CBO) (V) (Test Condition)40

Contextual Info: PH1090-550S Avionics Pulsed Power Transistor 550W, 1090 MHz, 10µs Pulse, 1% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: PH1090-400S Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)80â V(BR)CBO (V) I(C) Max. (A)18 Absolute Max. Power Diss. (W)1.2k# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)13mx @V(CBO) (V) (Test Condition)45

Contextual Info: PH1090-15S Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)70â V(BR)CBO (V) I(C) Max. (A)1.1 Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.5mx @V(CBO) (V) (Test Condition)40