PHA2230
Abstract: No abstract text available
Text: Aft Bipolar Pulsed Power Module PHA2230-5S 5.0 Watts, 2.20-3.00 GHz, 2 |is Pulse, 10% Duty Features Outline Drawing Designed for Radar and EW Applications Input and Output Matched to 50Q Class C Pulse Operation Gain Sloping Network on Input Absolute Maximum Ratings at 25°C
|
OCR Scan
|
PHA2230-5S
PHA2230
Sb42205
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Aß Avionics Pulsed Power Transistor PH0912-5 Preliminary 5 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation
|
OCR Scan
|
PH0912-5
Sb42205
|
PDF
|
1N5711 JANTXV
Abstract: 1N5711 JANTX MA4E2835 MA4E2812 MA4E-2303 1N5167
Text: an A M P com pany General Purpose Axial Lead Glass Packaged Schottky Diodes V 2.00 Features • • • • Case Style 54 Picosecond Switching JANTX/JANTXV Screening Available Low Forward Voltage Drop Low Reverse Leakage Description This family of Schottky diodes have “picosecond” switch
|
OCR Scan
|
MA4E2835
5L42205
1N5711 JANTXV
1N5711 JANTX
MA4E2812
MA4E-2303
1N5167
|
PDF
|
TRANSISTOR LC80
Abstract: No abstract text available
Text: Wireless Power Transistor M a PH0810-60 60 Watts, 850-960 MHz Features • • • • • Outline Drawing Designed for Linear Amplifier Applications Class AB: -32dBc Typ 3rd IMD at 60 Watts PEP Common Emitter Configuration Internal Input Impedance Matching
|
OCR Scan
|
PH0810-60
-32dBc
Sb42205
TRANSISTOR LC80
|
PDF
|
omni spectra sma
Abstract: transistor n03 PH2856
Text: Linear Accelerator Pulsed Power Transistor PH2856-3 3 Watts, 2.856 GHz, 12 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry
|
OCR Scan
|
PH2856-3
Sb42205
0D013S3
TT50M50A
ATC100A
Sb4E20S
Q0D1324
omni spectra sma
transistor n03
PH2856
|
PDF
|
C1413
Abstract: T039 package
Text: Aß N -C h an n e l RF Power MOSFET UF2801K1 1 Watt, 100-500 MHz, 28 V Features • • • • • lD j DMOS Structure Lower Capacitances for Broadband Operation Lower Noise Floor 100 MHz to 500 MHz Operation Common Source T039 Package Configuration Absolute Maximum Ratings at 25°C
|
OCR Scan
|
UF2801K1
C1413
T039 package
|
PDF
|
ARCO
Abstract: No abstract text available
Text: H I INC 5 6 4 2 2 1S_M ZA^CDIL ÖS DE I 85D Sb4EEGS 00454 D DDGQ4SM N-CHANNEL ENHANCEMENT-MODE RF POw E r FETs M DV2860T, DV2860U fa C Q * M/A-COM PHI, INC. The DV2860 is a VMOS N-channel enhancement mode RF power FET. This 60W device is ideal for high power final amplifier applications, push-pull or single end
|
OCR Scan
|
DV2860T,
DV2860U
DV2860
7-100pF)
ARCO
|
PDF
|
transistor 45 f 122
Abstract: capacitor 4.7 uF electrolytic capacitor 47 transistor 975
Text: Avionics Pulsed Power Transistor A ß PH0912-75 Preliminary 75 Watts, 960-1215 MHz, 7 ¿is Pulse, 50% Duty Features • • • • • • • • • Outline Drawing Designed for JTIDS Applications NPN Silicon Microwave Power Transistor Common Base Configuration
|
OCR Scan
|
PH0912-75
5b422G5
DDG11
Sb42205
transistor 45 f 122
capacitor 4.7 uF
electrolytic capacitor 47
transistor 975
|
PDF
|
2N6665
Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
Text: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed
|
OCR Scan
|
SL42E05
M220S
0001fl11
2N6665
MA42001-509
2N6665-509
MA42181-510
2n5054
RF NPN POWER TRANSISTOR C 10-50 GHZ
2N2857 Model
MA42001
ma42 transistor
2N3953
|
PDF
|