6010.5
Abstract: TT50M50A a2024a
Text: L3E D 5b422D5 0000031 OMT HAP MICROW AVE PULSED POWER TRANSISTOR PH1214-2.0M PRELIMINARY REV. NC 05/05/92 n/A-con p h M/A-COM PHI, INC. o DESIGN CHARACTERISTICS 100 uS Pulse Operation Broadband 1.2 - 1 . 4 GHz Operation Common Base Configuration Gold Metallization System
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5b422D5
PH1214-2
A2024A
6010Metallization
ATC100A
TT50M50A.
6010.5
TT50M50A
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Untitled
Abstract: No abstract text available
Text: AjtÁ CW Power Transistor PH2323-6 Preliminary 6.0 Watts, 2.30 GHz Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors
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PH2323-6
513MM)
5b422D5
00013D3
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MA47221
Abstract: No abstract text available
Text: Afocm M an A M P com pany Stripline PIN Diode Switch Modules MA47200 Series Features • • • • • • Broadband 50 Ohm Designs Through X Band Circuit Characterized High Power Capacity Voltage Ratings to 1000 Volts Fast Switching Speed to 10 Nanoseconds
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MA47200
5b422D5
MA47221
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transistor 936
Abstract: 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100
Text: A tÓ K m m an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N-Channel Enhancement Mode Device HF to VHF Applications 40 Watts CW Common Source Push-Pull Configuration DMOS Structure Aluminum Metallization
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DU2840V
5b422D5
C7C9C12C14
C10C13C15
5b4BE05
transistor 936
100 watt hf mosfet 12 volt
150 watt hf transistor 12 volt
transistor qz
transistor rf m 2528
DU2840V
100 watt hf transistor 12 volt
1000 watt hf transistor 12 volt
atc ldo
LDS100
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F300
Abstract: No abstract text available
Text: CW Power Transistor A fa PH0303-8 8.0 Watts, 300-325 MHz Features • • • • • • • Outline Drawing NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation Diffused Emitter Ballasting Resistors Gold Metallization System
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PH0303-8
5b422D5
0DD1172
F300
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Untitled
Abstract: No abstract text available
Text: Aß Avionics Pulsed Power Transistor PH 1090-15S Preliminary 15 Watts, 1030-1090 MHz, 10 jis Pulse, 1% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration
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1090-15S
5b422D5
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2N6665
Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
Text: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed
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SL42E05
M220S
0001fl11
2N6665
MA42001-509
2N6665-509
MA42181-510
2n5054
RF NPN POWER TRANSISTOR C 10-50 GHZ
2N2857 Model
MA42001
ma42 transistor
2N3953
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