bs 170
Abstract: BS 050 transistor Q67000-S076
Text: BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 170 60 V 0.3 A 5Ω TO-92 BS 170 Type BS 170 Ordering Code Q67000-S076 D Tape and Reel Information
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Q67000-S076
E6288
bs 170
BS 050 transistor
Q67000-S076
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Q67000-S076
Abstract: BS 050 transistor transistor BS 170
Text: BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 170 60 V 0.3 A 5Ω TO-92 BS 170 Type BS 170 Ordering Code Q67000-S076 D Tape and Reel Information
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Q67000-S076
E6288
Q67000-S076
BS 050 transistor
transistor BS 170
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S 170 TRANSISTOR
Abstract: transistor BS 170 bs 170 Q67000-S076 bs170 Transistor Bs
Text: SIPMOS Small-Signal Transistor BS 170 ● VDS 60 V 0.3 A ● ID ● RDS on 5.0 Ω ● VGS(th) 0.8 … 2.0 V ● N channel ● Enhancement mode ● Logic level 2 3 1 1 Type Ordering Code Tape and Reel Information 1 2 3 BS 170 Q67000-S061 bulk S G D BS 170
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Q67000-S061
Q67000-S076
E6288:
S 170 TRANSISTOR
transistor BS 170
bs 170
Q67000-S076
bs170
Transistor Bs
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bs170
Abstract: 5K02 MARKING BS
Text: SIEMENS BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V 5 VPT05158 Pin 1 Pin 2 S Type VDS b BS 170 60 V 0.3 A Type BS 170 BS 170 Ordering Code Q67000-S061 Q67000-S076 Pin 3 G ^DS(on) Package
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VPT05158
Q67000-S061
Q67000-S076
E6288
11---------------------------------O
bs170
5K02
MARKING BS
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Untitled
Abstract: No abstract text available
Text: SIEMENS BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • V^GS th = 0.8.2.0V Pin 1 Pin 2 S Type VDS b BS 170 60 V 0.3 A Type BS 170 Ordering Code Q67000-S076 %S(on) 5Û Pin 3 G Package Marking TO-92 BS 170 D
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Q67000-S076
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Untitled
Abstract: No abstract text available
Text: BS 170 I nf ineon la c h n o I og i • s SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 VPT05548 • ^GS th = 0-8-2.0V Pin 3 Pin 2 Pin 1 G S Type ^OS b flDS(on) Package Marking BS 170 60 V 0.3 A 5Ü TO-92 BS 170 Type
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VPT05548
Q67000-S076
E6288
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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BLV38
Abstract: 4312 020 36642 transistor bd 346 class A push pull power amplifier PHILIPS 4312 amplifier sot179
Text: PHILIPS INTERNATIONAL bS E D • 711GÔ5ti DDt.2R2R Jl 557 ■ BLV38 VHF LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use In linear V H F television transmitters vision o r sound amplifiers .
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711Gfl5ti
BLV38
711002t.
0b2c13fl
BLV38
4312 020 36642
transistor bd 346
class A push pull power amplifier
PHILIPS 4312 amplifier
sot179
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BUK427-400A
Abstract: BUK427-400B UNC20
Text: N AMER □ □ 2 0 2 bS 4 SSE D PHILIPS/DISCRETE PowerMOS transistor BUK427-400A BUK427-400B r-rh }} GENERAL DESCRIPTION SYMBOL Cfl G > N-channef enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in
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BUK427-400A
BUK427-400B
BUK427
-400A
-400B
UNC20
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2SK774
Abstract: No abstract text available
Text: 6427525 N E C ELECTRONICS as SaSyir.";- FEATU RES 98D 18925 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ~Tfi D ESCRIPTIO N INC D E | b457S2S OQlfl^BS fl 2SK774 The 2SK774 is N-channel MOS Field Effect Power Transistor designed for switching power supplies OC-OC converter.
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2SK774
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BUK427-400A
Abstract: 100-P BUK427-400B lD25-c RI LGR
Text: N AMER btiS3'i31 □□202 bS SSE D P H I L I P S / D I SC RE T E 4 PowerMOS transistor BUK427-400A BUK427-400B • GENERAL DESCRIPTION SYMBOL CO Û > N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in
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BUK427-400A
BUK427-400B
BUK427
-400A
-400B
100-P
BUK427-400B
lD25-c
RI LGR
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BS170
Abstract: No abstract text available
Text: SIEMENS SIPMOS Small-Signal Transistor BS 170 VDS = 60 V / o = 0 .3 A ^DS on = 5.0 Q -4.2- • N channel • Enhancement mode • Package: TO-92 a 1) 1.6 0.4 GPT05573 taped version Type Ordering code for version on tape Ordering code for version in bulk
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Q67000-S076
Q67000-S285
Q67000-S061
GQ54112
E35bOS
BS170
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 357 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 357 1000 V 5.1 A ^bS on Package Ordering Code 2w TO-218 AA C67078-S3110-A2 Maximum Ratings Parameter Symbol Continuous drain current Id Tc = 25 °C
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O-218
C67078-S3110-A2
200-----V
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VPT05155
Abstract: buz90 SiEMENS PM 350 98 C67078-S1321-A2 s34 diode transistor buz 90 GP-051
Text: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vds 600 V 10 ^bS on Package Ordering Code 4.5 A 1.6Í2 TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values
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VPT05155
O-220
C67078-S1321-A2
VPT05155
buz90
SiEMENS PM 350 98
C67078-S1321-A2
s34 diode
transistor buz 90
GP-051
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 339 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 339 b 11.5 A l/bs 500 V ^bsion Package Ordering Code 0.5 n TO-218 AA C67078-S3133-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values
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O-218
C67078-S3133-A2
235b05
O-218AA
A235bGS
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Untitled
Abstract: No abstract text available
Text: Motor driver ICs 3-phase motor driver BA6871BS The BA6871 BS is a 3-phase, full-wave, pseudo-linear motor driver suited for VCR capstan motors. The IC has a torque ripple cancellation circuit to reduce wow and flutter, and an output transistor saturation prevention circuit that
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BA6871BS
BA6871
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FR ED FET Type Vos BUZ 384 500 V 4> 10.5 A *bs on 0.6 w Package Ordering Code TO-218AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage Vos Drain-gate voltage
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O-218AA
C67078-A3209-A2
O-218AA
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ10S2 Not for new design SIPMOS @Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ10S2 ^bs 60 V to HDS on Package Ordering Code 23 A 0.07 Í 2 TO-220 AB C67078-S1300-A7 Maximum Ratings Parameter Symbol Values Continuous drain current
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BUZ10S2
O-220
C67078-S1300-A7
A235bG5
A235b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds BUZ 90 600 V 4.5 A ^bS on Package Ordering Code 1 .6 Q TO-220 AB C67078-S1321-A2 Maxim um Ratings Parameter Symbol Continuous drain current fc = = b
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O-220
C67078-S1321-A2
023SbD5
OOA4471
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 347 50 V h 45 A ^bs on Package Ordering Code 0.03 n TO-218AA C67078-S31 15-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218AA
C67078-S31
15-A2
fl23SbOS
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transistor buz 10
Abstract: No abstract text available
Text: SIEMENS BUZ 10 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type B U Z 10S 2 Vbs 60 V b 23 A ^bs on 0.07 n Package Ordering Code TO-220 AB C67078-S1300-A7 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1300-A7
transistor buz 10
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resistor MR25 philips
Abstract: resistor MR25 philips MR25 MR25 resistor MR25 philips Metal film resistor MF led MR25 MR25 DGB27 transistor nf
Text: PHILIPS INTERNATIONAL bS E D □0LE713 711Dö2b 0 2 ö I IPHIN BLU20/12 U.H.F. POWER TRANSÌSTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile
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711D02b
0LE713
BLU20/12
OT-119)
711002b
0b2720
resistor MR25 philips
resistor MR25
philips MR25
MR25 resistor
MR25 philips
Metal film resistor MF
led MR25
MR25
DGB27
transistor nf
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GES6014
Abstract: GES6015 GES6016 GES6017 affa 18
Text: 1989963 CENTRAL SEM C O N D U C T O R _ 6 1 C 0 0 2 3 0 ti graf&Gsfl gSHBB6©K€il©SS@F @@51-3. de -r-â9 '£L 00DDE3D b I • GES6014 GES6016 C@BS€?CSl SemftfiGQnSfilBCtOr Corp. Central semiconductor Corp. NPN SILICON TRANSISTOR 1 4 5 Adams Avenue
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GES6014
GES6016
to-92
GES6014,
GES6016
GES6015,
GES6017
CBR30
GES6015
affa 18
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ecn 3-Phase Motor Driver IC
Abstract: BA6871 BA6871BS SDIP32 motor breaker gv2
Text: Motor driver ICs 3-phase motor driver BA6871BS The BA6871 BS is a 3-phase, full-w ave, p se u d o -lin e a r m o to r driver suite d for VCR cap stan m otors. The IC has a torque ripple cancellation circuit to reduce w ow and flutter, and an output transistor saturation prevention circuit that
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BA6871BS
BA6871BS
ecn 3-Phase Motor Driver IC
BA6871
SDIP32
motor breaker gv2
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Untitled
Abstract: No abstract text available
Text: 1989963 CENTRAL SEM C O N D U C T O R _ 6 1 C 0 0 2 3 0 - r - 2 9 ' 3 1 ti graf&Gsfl gSfiîB6e©Bi^5SÊ@P @@51-3. de I n t m b B • 00DDE3D b GES6014 GES6016 C@BS€?CSl g©DlliS@HÖö£tOP Corp. Central sem iconductor Corp. NPN SILICON TRANSISTOR
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00DDE3D
GES6014
GES6016
GES6014,
GES6016
GES6015,
GES6017
CBR10Series,
CBR25Ser/es
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