TRANSISTOR BR C 3205 Search Results

PANASONIC CE FC CAPACITOR

Contextual Info: Panasonic ICs for Motor A N 3 8 6 1 S A Sensor-less Motor Drive 1C for VTR Movie Cylinder • Overview The AN 3861SA is a sensor-less motor drive IC for VTR movie cylinder. It uses both sensor-less and sine wave drive, thus excellent for low-noise applications.

3 phase motor control

Abstract: AN3861SA inductive sensor oscillator circuit PANASONIC AN38 panasonic cylinder unit 560PF DG12 forward and reverse control of 3 phase motor vb14
Contextual Info: Panasonic ICs for Motor A N 3 8 6 1 S A Sensor-less Motor Drive 1C for VTR Movie Cylinder • Overview The AN 3861SA is a sensor-less motor drive IC for V TR movie cylinder. It uses both sensor-less and sine wave drive, thus excellent for low-noise applications.

TRANSISTOR C 3205

Abstract: 3205 transistor TRANSISTOR BR C 3205 transistor TD-100 ZTX576 DSA003769 3205 ic
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX576 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 -0.8 tr ts nS µS 500 5 Switching time VCE sat - (Volts) IC/IB=10 -0.6 -0.4 -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 tf nS 1000 ts C B 800 600 tf

Contextual Info: j Ordering number: EN 1438B _:_ 2SC3504 No.l438B NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display, Video Output Applications Features . High fT. . Small reverse transfer capacitance. Absolute Haxiaua Ratings at Ta=:25°C Collector to Base Voltage

TRANSISTOR C 3205

Abstract: 3205 transistor TRANSISTOR BR C 3205 TRANSISTOR 3205
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX576 ISSUE 1 - APRIL 94_ — - - FEATU RES * 200 Volt VCE0 * 1 Amp continuous current * Ptot= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

transistor c 3205

Abstract: 3205 ic
Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT649 IS S U E 4 - FEBRUARY 1996_ FEATURES * * 25 Volt VCE0 3 A m p continuous current * Low saturation voltage * Excellent hFE specified up to 6A C O M P L E M E N T A R Y TYPE -

2SC3504

Abstract: 1438B
Contextual Info: Ordering num ber: EN 1438B N0.1438B _ 2SC3504 NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display, Video Output Applications Features . High fT . . Small reverse transfer capacitance. Absolute Maxi«um Ratings at Ta=25 C Collector to Base Voltage

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 - APRIL 94_ FEATURES * 200 Volt V,CEO 1 Amp continuous current P,or 1 W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT v CBO -200 V Collector-Emitter Voltage

capacitor Microphones

Abstract: TF202
Contextual Info: UTC TF202 N-CHANNEL SILICON TRANSISTOR CAPACITOR MICROPHONE APPLICATIONS FEATURES *Ultrasmall-sized package permitting TF202 appliedses to be made small and slim. *Especially suited for use in audio,telephone capacitor microphones. *Excellent voltage charactristic.

pin diagram for core i7 processor

Abstract: intel i7 processor SIMD 2008 intel core i7-2670qm
Contextual Info: Intel Atom Processor 330∆ Series Datasheet For systems based on Entry Level Desktop Platform for ‘08 Revision 003 April 2010 Document Number: 320528-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,

2SC3504

Contextual Info: Ordering number:EN1438B NPN Epitaxial Planar Silicon Transistor 2SC3504 High-Definition CRT Display, Video Output Applications Features Package Dimensions • High fT. · Small reverse transfer capacitance. unit:mm 2006A [2SC3504] B : Base C : Collector E : Emitter

2SC3504

Abstract: ITR05640 ITR05641 ITR05642 ITR05643
Contextual Info: Ordering number:ENN1438B NPN Epitaxial Planar Silicon Transistor 2SC3504 High-Definition CRT Display, Video Output Applications Features Package Dimensions • High fT. · Small reverse transfer capacitance. unit:mm 2006B [2SC3504] 6.0 5.0 8.5 4.7 14.0 6.0

sot440

Abstract: MLC092
Contextual Info: Philips Semiconductors Product specification . NPN microwave power transistors FEATURES PTB32001X; PTB32003X; ’ _ ’ PTB32005X PINNING - SOT44QA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

PTB32001X

Abstract: PTB32003X PTB32005X SC15 permittivity
Contextual Info: Philips Semiconductors Product specification PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors PINNING - SOT44QA FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN • Interdigitated structure provides high emitter efficiency

Contextual Info: FSS9230D, FSS9230R HARRIS S E M I C O N D U C T O R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Description Features • 4A, -200V, rDs ON = 1.60£i • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD K4059 Preliminary N-CHANNEL JFET FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE  DESCRIPTION The UTC K4059 is an N-channel JFET, it uses UTC’s advanced technology to provide customers with low input capacitance and low

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD K4059 Preliminary N-CHANNEL JFET FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE  DESCRIPTION The UTC K4059 is an N-channel JFET, it uses UTC’s advanced technology to provide customers with low input capacitance and low

2n4405

Abstract: 2n4404 2N4404 MOTOROLA 2n4405 motorola
Contextual Info: MOTOROLA SC XSTRS/R 1EE 0 I F L3b725«4 GüôbMia 'i | T-33-n 2N4404 2N4405 M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage v CEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage Ve b o 5.0 Vdc Rating Collector Current — Continuous

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

data sw 3205

Contextual Info: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 4A, -200V, ros ON = 1 -60ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

ic 4081 datasheet

Abstract: 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1
Contextual Info: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 4A, -200V, rDS ON = 1.60Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

MSA117

Abstract: PTB32001X PTB32003X PTB32005X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors

AC motor current limiter

Abstract: QFP042-P-1010 AC Motor soft start IC AN8221FB AN8235S hdd motor X10-9 Hdd spindle motor AX463
Contextual Info: Panasonic ICs for Motor AN8221FB HDD Sensor-less Motor Driver 1C • Overview A N 8 2 2 1 F B is a s e n s o r-le s s m o to r d rive 1C which requires no sensors like a Hall element of spindle motor in HDD. It employs the soft switch system of three-phase full

intel atom 2008 processor SSE2

Abstract: IERR
Contextual Info: Intel Atom Processor 300Δ Series Datasheet — Supports Nettop platform for ‘08 September 2008 Document Number: 320528-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR