PANASONIC CE FC CAPACITOR
Abstract: No abstract text available
Text: Panasonic ICs for Motor A N 3 8 6 1 S A Sensor-less Motor Drive 1C for VTR Movie Cylinder • Overview The AN 3861SA is a sensor-less motor drive IC for VTR movie cylinder. It uses both sensor-less and sine wave drive, thus excellent for low-noise applications.
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3861SA
PANASONIC CE FC CAPACITOR
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3 phase motor control
Abstract: AN3861SA inductive sensor oscillator circuit PANASONIC AN38 panasonic cylinder unit 560PF DG12 forward and reverse control of 3 phase motor vb14
Text: Panasonic ICs for Motor A N 3 8 6 1 S A Sensor-less Motor Drive 1C for VTR Movie Cylinder • Overview The AN 3861SA is a sensor-less motor drive IC for V TR movie cylinder. It uses both sensor-less and sine wave drive, thus excellent for low-noise applications.
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AN3861SA
AN3861SA
32-pin
3 phase motor control
inductive sensor oscillator circuit
PANASONIC AN38
panasonic cylinder unit
560PF
DG12
forward and reverse control of 3 phase motor
vb14
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TRANSISTOR C 3205
Abstract: 3205 transistor TRANSISTOR BR C 3205 transistor TD-100 ZTX576 DSA003769 3205 ic
Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX576 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 -0.8 tr ts nS µS 500 5 Switching time VCE sat - (Volts) IC/IB=10 -0.6 -0.4 -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 tf nS 1000 ts C B 800 600 tf
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ZTX576
IC/10
-100mA,
-10mA,
-300mA,
-50mA,
100MHz
TRANSISTOR C 3205
3205 transistor
TRANSISTOR BR C 3205
transistor TD-100
ZTX576
DSA003769
3205 ic
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Untitled
Abstract: No abstract text available
Text: j Ordering number: EN 1438B _:_ 2SC3504 No.l438B NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display, Video Output Applications Features . High fT. . Small reverse transfer capacitance. Absolute Haxiaua Ratings at Ta=:25°C Collector to Base Voltage
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1438B
2SC3504
l438B
SC-51
4237AT/3205KI
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TRANSISTOR C 3205
Abstract: 3205 transistor TRANSISTOR BR C 3205 TRANSISTOR 3205
Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX576 ISSUE 1 - APRIL 94_ — - - FEATU RES * 200 Volt VCE0 * 1 Amp continuous current * Ptot= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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ZTX576
-100hA
-160V
-10mA*
-100mA,
100MHz
TRANSISTOR C 3205
3205 transistor
TRANSISTOR BR C 3205
TRANSISTOR 3205
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transistor c 3205
Abstract: 3205 ic
Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT649 IS S U E 4 - FEBRUARY 1996_ FEATURES * * 25 Volt VCE0 3 A m p continuous current * Low saturation voltage * Excellent hFE specified up to 6A C O M P L E M E N T A R Y TYPE -
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OT223
FZT649
FZT749
300ns.
100ms
transistor c 3205
3205 ic
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2SC3504
Abstract: 1438B
Text: Ordering num ber: EN 1438B N0.1438B _ 2SC3504 NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display, Video Output Applications Features . High fT . . Small reverse transfer capacitance. Absolute Maxi«um Ratings at Ta=25 C Collector to Base Voltage
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1438B
2SC3504
2SC3504
1438B
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 - APRIL 94_ FEATURES * 200 Volt V,CEO 1 Amp continuous current P,or 1 W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT v CBO -200 V Collector-Emitter Voltage
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001G35S
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capacitor Microphones
Abstract: TF202
Text: UTC TF202 N-CHANNEL SILICON TRANSISTOR CAPACITOR MICROPHONE APPLICATIONS FEATURES *Ultrasmall-sized package permitting TF202 appliedses to be made small and slim. *Especially suited for use in audio,telephone capacitor microphones. *Excellent voltage charactristic.
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TF202
TF202
OT-113
QW-R210-001
110Hz
capacitor Microphones
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pin diagram for core i7 processor
Abstract: intel i7 processor SIMD 2008 intel core i7-2670qm
Text: Intel Atom Processor 330∆ Series Datasheet For systems based on Entry Level Desktop Platform for ‘08 Revision 003 April 2010 Document Number: 320528-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,
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i7-2630QM/i7-2635QM,
i7-2670QM/i7-2675QM,
i5-2430M/i5-2435M,
i5-2410M/i5-2415M.
15-Sep-2011
pin diagram for core i7 processor
intel i7 processor SIMD 2008
intel core i7-2670qm
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2SC3504
Abstract: No abstract text available
Text: Ordering number:EN1438B NPN Epitaxial Planar Silicon Transistor 2SC3504 High-Definition CRT Display, Video Output Applications Features Package Dimensions • High fT. · Small reverse transfer capacitance. unit:mm 2006A [2SC3504] B : Base C : Collector E : Emitter
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EN1438B
2SC3504
2SC3504]
SC-51
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2SC3504
Abstract: ITR05640 ITR05641 ITR05642 ITR05643
Text: Ordering number:ENN1438B NPN Epitaxial Planar Silicon Transistor 2SC3504 High-Definition CRT Display, Video Output Applications Features Package Dimensions • High fT. · Small reverse transfer capacitance. unit:mm 2006B [2SC3504] 6.0 5.0 8.5 4.7 14.0 6.0
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ENN1438B
2SC3504
2006B
2SC3504]
2SC3504
ITR05640
ITR05641
ITR05642
ITR05643
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sot440
Abstract: MLC092
Text: Philips Semiconductors Product specification . NPN microwave power transistors FEATURES PTB32001X; PTB32003X; ’ _ ’ PTB32005X PINNING - SOT44QA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OT440A
PTB32001X;
PTB32003X;
rTB32005X
PTB32003X.
PTB32005X
sot440
MLC092
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PTB32001X
Abstract: PTB32003X PTB32005X SC15 permittivity
Text: Philips Semiconductors Product specification PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors PINNING - SOT44QA FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN • Interdigitated structure provides high emitter efficiency
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OT440A
PTB32001X;
PTB32transistors
PTB32005X
PTB32005X.
PTB32003X;
OT440A.
PTB32001X
PTB32003X
PTB32005X
SC15
permittivity
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Untitled
Abstract: No abstract text available
Text: FSS9230D, FSS9230R HARRIS S E M I C O N D U C T O R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Description Features • 4A, -200V, rDs ON = 1.60£i • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event
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FSS9230D,
FSS9230R
-200V,
MIL-STD-750,
MIL-S-19500,
-160V,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD K4059 Preliminary N-CHANNEL JFET FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE DESCRIPTION The UTC K4059 is an N-channel JFET, it uses UTC’s advanced technology to provide customers with low input capacitance and low
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K4059
K4059
K4059L-x-AQ3-R
K4059G-x-AQ3-R
OT-723
QW-R228-001
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD K4059 Preliminary N-CHANNEL JFET FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE DESCRIPTION The UTC K4059 is an N-channel JFET, it uses UTC’s advanced technology to provide customers with low input capacitance and low
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K4059
K4059
K4059G-x-AQ3-R
OT-723
QW-R228-001
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2n4405
Abstract: 2n4404 2N4404 MOTOROLA 2n4405 motorola
Text: MOTOROLA SC XSTRS/R 1EE 0 I F L3b725«4 GüôbMia 'i | T-33-n 2N4404 2N4405 M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage v CEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage Ve b o 5.0 Vdc Rating Collector Current — Continuous
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L3b725
2N4404
2N4405
T-33-n
O-205AD)
2n4405
2N4404 MOTOROLA
2n4405 motorola
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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data sw 3205
Abstract: No abstract text available
Text: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 4A, -200V, ros ON = 1 -60ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSS9230D,
FSS9230R
-200V,
-257AA
MIL-S-19500
data sw 3205
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ic 4081 datasheet
Abstract: 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1
Text: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 4A, -200V, rDS ON = 1.60Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSS9230D,
FSS9230R
-200V,
ic 4081 datasheet
1E14
2E12
FSS9230D
FSS9230D1
FSS9230D3
FSS9230R
FSS9230R1
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MSA117
Abstract: PTB32001X PTB32003X PTB32005X
Text: DISCRETE SEMICONDUCTORS DATA SHEET PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors
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PTB32001X;
PTB32003X;
PTB32005X
OT440A
SCA53
127147/00/02/pp12
MSA117
PTB32001X
PTB32003X
PTB32005X
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AC motor current limiter
Abstract: QFP042-P-1010 AC Motor soft start IC AN8221FB AN8235S hdd motor X10-9 Hdd spindle motor AX463
Text: Panasonic ICs for Motor AN8221FB HDD Sensor-less Motor Driver 1C • Overview A N 8 2 2 1 F B is a s e n s o r-le s s m o to r d rive 1C which requires no sensors like a Hall element of spindle motor in HDD. It employs the soft switch system of three-phase full
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AN8221FB
AN8221FB
AN8235S)
AC motor current limiter
QFP042-P-1010
AC Motor soft start IC
AN8235S
hdd motor
X10-9
Hdd spindle motor
AX463
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intel atom 2008 processor SSE2
Abstract: IERR
Text: Intel Atom Processor 300Δ Series Datasheet — Supports Nettop platform for ‘08 September 2008 Document Number: 320528-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR
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