TRANSISTOR 3005 Search Results

transistor 30054

Abstract: transistor 3005 2 acrian RF POWER TRANSISTOR transistor 3005 i 3005-2 transistor 3005-2 transistor b 30054 acrian ic ACRIAN acrian inc
Contextual Info: 0182998 ACRIAN GENERAL INC 97D 0 1 4 7 9 3005 DESCRIPTION 5 WATT - 28 VOLTS 3000 MHz The 3005 is a common base transistor capable of providing 5 watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications

transistor 3005

Contextual Info: 3005 5 Watts - 28 Volts, Class C Microwave 3000 MHz GENERAL DESCRIPTION CASE OUTLINE The 3005 is a COMMON BASE transistor capable of providing 5 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor

kst2907

Contextual Info: KST2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA»25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: KST2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: KST4403 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING TRANSISTOR ABSOLUTE MAXIMUM RATINGS T ,= 2 5 °C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage VcBO Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Philips 2222 050 capacitor

Contextual Info: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated

Contextual Info: KST3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t; C haracteristic Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: KST2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

MPS A13 transistor

Abstract: MPS A13 MPS-A13 MPS-A13-14 MPSA13 MPSA14
Contextual Info: MPSA13/14 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CES 30 V

BTS630

Abstract: GDS5163 KSP8598 KSP8599
Contextual Info: KSP8598/8599 PNP EPITAXIAL SILICX N TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: VCeo = KSP8598: 60V KSP8599: 80V • C ollector Dissipation: P c max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage

2N 326 Transistor

Abstract: transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor
Contextual Info: SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV

Contextual Info: 2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • Collector-Emitter Voltage: V c e o = 150 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Em itter Voltage

Contextual Info: SAMSUNG ELE CTRONICS INC 42E D MPSA05 • T'ibMlMS GOO'iDSb b ■ SMGK NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto = 60 V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS(Ta=25°C) Characteristic

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

2U marking code

Abstract: KST63 2u transistor KST64 MARK 2U MARKING CODE 2I
Contextual Info: KST63/64 PNP EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage V cbO -3 0 V Collector-Emitter Voltage -3 0 V Emitter-Base Voltage VcES Vino Collector Current lc

609 transistor

Abstract: KSP62 KSP63 KSP64 S-05
Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP62/63/64 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V CEs = KSP62: 20V KSP63/64: 30V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Rating Unit K SP62

K1 transistor

Contextual Info: KSC1983 NPN EPITAXIAL SILICON TRANSISTOR HIGH 0 POW ER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector-Base Voltage VcBO Symbol 80 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current VcEO 60 V V ebo 6 V lc 3 A Base Current

kst2907 TRANSISTOR PNP

Abstract: KST2907 002-HA
Contextual Info: KST2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation Storage Tem perature

2929 transistor

Abstract: MPSA25 mpsa82 MPSA26 MPSA45 MPSA55 MPSA62 MPSA63 I0204 625MW
Contextual Info: SAMSUNG SEMICONDUCTOR INC MPSA26 14E O 00073SM I NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vc*s=50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracte ristic

Contextual Info: 2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: V ceo * 150V • CoMactor Dissipation: Pc max *625mW ABSOLUTE MAXIMUM RATINGS (TA-2 5 t:) C h aracteristic Collector-Base Voltage Coltector-Em itter Voltage Em itter-Base Voltage

ksp2907

Contextual Info: KSP2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Em itter Voltage: V c e o ” 40V • Collector Dissipation: Pc max «625mW ABSOLUTE MAXIMUM RATINGS <Ta= 2 5 T :) C haracteristic Collector-Base Voltage Collector-Em itter Voltage

Contextual Info: SAMSUNG ELECTRONICS INC MMBT5401 M2E D • 7^4142 0 0 C H Û 4 7 S ■ SMGK PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage ■

WS300

Contextual Info: KSP55/56 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Em itter Voltage: V Ceo * K S P 5 5 : 60V KSPS6:80V • Collector Dissipation: Pc max “ 625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Sym bol C haracteristic Collector-Base Voltage

MPSA27

Abstract: MPSA77 MPS-A27
Contextual Info: SEMICONDUCTOR MPSA77 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A ᴌComplementary to MPSA27. N E K G J D MAXIMUM RATINGS Ta=25ᴱ UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCES -60 V Emitter-Base Voltage