Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MPSA14 Search Results

    SF Impression Pixel

    MPSA14 Price and Stock

    onsemi MPSA14

    TRANS NPN DARL 30V 0.5A TO92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MPSA14 Bulk 15,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    ComSIT USA MPSA14 6,566
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    onsemi MPSA14G

    TRANS NPN DARL 30V 0.5A TO92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MPSA14G Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Micro Commercial Components MPSA14-AP

    TRANS NPN DARL 30V 0.5A TO92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MPSA14-AP Ammo Pack
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Bristol Electronics MPSA14-AP 7,386
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components MPSA14-AP 5,908
    • 1 $0.522
    • 10 $0.522
    • 100 $0.522
    • 1000 $0.1566
    • 10000 $0.1044
    		Buy Now
    MPSA14-AP 5,908
    • 1 $0.522
    • 10 $0.522
    • 100 $0.522
    • 1000 $0.1566
    • 10000 $0.1044
    		Buy Now

    Micro Commercial Components MPSA14-BP

    TRANS NPN DARL 30V 0.5A TO92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MPSA14-BP Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    NXP Semiconductors MPSA14,116

    TRANS NPN DARL 30V 0.5A TO92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MPSA14,116 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more MPSA14 price and stock on Findchips.com

    MPSA14 Datasheets (78)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MPSA14 Central Semiconductor Leaded Small Signal Transistor Darlington Original PDF
    MPSA14 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    MPSA14 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    MPSA14 General Semiconductor Darlington Bipolar Transistor, NPN, 30V at Tc=25C, TO-92, 3-Pin Original PDF
    MPSA14 Korea Electronics TRANS DARLINGTON NPN 30V 0.5A 3TO-92 Original PDF
    MPSA14 Micro Commercial Components TRANS DARLINGTON BJT NPN 30V 0.5A 3TO-92 Original PDF
    MPSA14 Micro Commercial Components NPN Silicon Darlington Transistor Original PDF
    MPSA14 Motorola DARLINGTON TRANSISTORS Original PDF
    MPSA14 NXP Semiconductors NPN Darlington transistor Original PDF
    MPSA14 On Semiconductor Darlington Transistors NPN Original PDF
    MPSA14 Philips Semiconductors Small-signal Transistors Original PDF
    MPSA14 Philips Semiconductors NPN Darlington transistor Original PDF
    MPSA14 Siemens Cross Reference Guide 1998 Original PDF
    MPSA14 Sinyork Mini size of Discrete semiconductor elements Original PDF
    MPSA14 Vishay Telefunken TRANS DARLINGTON NPN 30V 0.5A 3TO-92 Original PDF
    MPSA14 Weitron Plastic-Encapsulate Transistros NPN Darlington Transistor Original PDF
    MPSA14 Central Semiconductor Darlington Bipolar Transistor, NPN, 60V, TO-92, 3-Pin Scan PDF
    MPS-A14 Central Semiconductor SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) Scan PDF
    MPSA14 Crimson Semiconductor Transistor Selection Guide Scan PDF
    MPSA14 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF

    MPSA14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5306

    Abstract: F63TNR MPSA14 PN2222N CBVK741B019
    Text: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5306 MPSA14 2N5306 F63TNR PN2222N CBVK741B019

    Untitled

    Abstract: No abstract text available
    Text: TN6725A C B TO-226 E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF TN6725A O-226 MPSA14

    Untitled

    Abstract: No abstract text available
    Text: MPSA13/MPSA14 Plastic-Encapsulate Transistros NPN Darlington Transistor * “G” Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 TO-92 Maximum Ratings(T =25 C Unless O therwise Specified) A Rating Symbol Value Unit Collector-Emitter Voltage VCEO 30 V


    Original     		PDF MPSA13/MPSA14 17-Jun-05 270TYP

    equivalent mpsa14

    Abstract: PR05 MMBTA14 MPSA14 PZTA14
    Text: MPSA14 MMBTA14 PZTA14 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings*


    Original     		PDF MPSA14 MMBTA14 PZTA14 OT-23 OT-223 MPSA14 MMBTA14 equivalent mpsa14 PR05 PZTA14

    transistor mpsa 250

    Abstract: transistor mpsa 13 equivalent mpsa14 MPSA13 MPSA14
    Text: MPSA13 MPSA14 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 500mA Collector-base Voltage 30V Operating and storage junction temperature range: -55OC to +150 OC


    Original     		PDF MPSA13 MPSA14 500mA -55OC transistor mpsa 250 transistor mpsa 13 equivalent mpsa14 MPSA13 MPSA14

    MW MARK

    Abstract: MMBTA13 MPSA14
    Text: MMBTA13 NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. 3 2 1 SOT-23 Mark: 1M 1. Base 2. Emitter 3. Collector


    Original     		PDF MMBTA13 MPSA14 OT-23 MMBTA13 MW MARK

    2N5308

    Abstract: PN2222N TO5 package D9842 F63TNR MPSA14 CBVK741B019 PN222N D74z transistor k 0247
    Text: 2N5308 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5308 MPSA14 2N5308 PN2222N TO5 package D9842 F63TNR CBVK741B019 PN222N D74z transistor k 0247

    MPSA14

    Abstract: transistor 625
    Text: UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. 1 FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)


    Original     		PDF MPSA14 OT-89 100mA 100mA 100MHz QW-R208-008 transistor 625

    MPSA13

    Abstract: equivalent mpsa14 MMBTA13 MPSA14 PZTA13
    Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.


    Original     		PDF MMBTA13 PZTA13 OT-23 OT-223 MPSA14 MPSA13 equivalent mpsa14 MMBTA13 PZTA13

    TN6725A

    Abstract: equivalent mpsa14 MPSA14 "Darlington Transistor"
    Text: TN6725A CB TO-226 E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF TN6725A O-226 MPSA14 TN6725A equivalent mpsa14 "Darlington Transistor"

    Untitled

    Abstract: No abstract text available
    Text: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N6426 MPSA14

    MPSA14M

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components MPSA13 MPSA14   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 500mA


    Original     		PDF MPSA13 MPSA14 500mA -55OC MPSA13--MPSA13 MPSA14--MPSA14. MPSA14M

    MPSA14

    Abstract: MPSA64 SC-43A darlington transistor MPSA14
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA14 NPN Darlington transistor Product specification Supersedes data of 2004 Aug 20 2005 May 04 Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA


    Original     		PDF M3D186 MPSA14 MPSA64. MAM252 SCA76 R75/07/pp6 MPSA14 MPSA64 SC-43A darlington transistor MPSA14

    Untitled

    Abstract: No abstract text available
    Text: MMBTA13 NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. 3 2 1 SOT-23 Mark: 1M 1. Base 2. Emitter 3. Collector


    Original     		PDF MMBTA13 MPSA14 OT-23 MMBTA13

    equivalent mpsa14

    Abstract: MPSa14 equivalent MPSA14
    Text: DC COMPONENTS CO., LTD. MPSA14 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for applications requiring extremely high current gain. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Base 3 = Collector


    Original     		PDF MPSA14 100mA, 100MHz equivalent mpsa14 MPSa14 equivalent MPSA14

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components MPSA13 MPSA14   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 500mA


    Original     		PDF MPSA13 MPSA14 500mA -55OC MPSA13--MPSA13 MPSA14--MPSA14.

    2N4123 pnp silicon

    Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50


    OCR Scan     		PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 2N4123 pnp silicon 2N4401 520

    mpsa13 636

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bTE D • bh53T31 QQ26Q13 flTfl H A P X MPSA13 MPSA14 SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS N-P-N silicon planar epitaxial darlington transistors in plastic TO-92 envelope for general purpose applications. QUICK REFERENCE DATA


    OCR Scan     		PDF bh53T31 QQ26Q13 MPSA13 MPSA14 100pA mpsa13 636

    MPSA13

    Abstract: MPSA12 MPSA14 mpsa13 central
    Text: Datasheet J • TM P a h 1 W C EITFO 1 Semiconductor Corp. MPSA12 MPSA13 MPSA14 NPN SILICON DARLINGTON TRANSISTOR JEDEC T0-92 CASE EBC 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF MPSA12 MPSA13 MPSA14 T0-92 MPSA12 MPSA14 MPSA13 mpsa13 central

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector • High DC current gain (min. 10000). 2 base 3 em itter APPLICATIONS • High gain am plification.


    OCR Scan     		PDF MPSA14 MPSA64. SC-43

    mpsa13

    Abstract: mps-a13 mpsa14
    Text: Philips Semiconductors Product specification NPN Darlington transistors FEATURES MPSA13; MPSA14 PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 • High DC current gain (min. 10000). 2 base 3 em itter collector APPLICATIONS


    OCR Scan     		PDF MPSA13; MPSA14 PSA63 MPSA64. MPSA13 PSA14 mps-a13 mpsa14

    MPSa14 equivalent

    Abstract: mpsa13 equivalent mpsa14 MPSa13 equivalent MPS-A13 PSA13
    Text: TOSHIBA DARLINGTON TRANSISTOR M PSA13,14 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR PRINTER DRIVE, CORE DRIVE AND LED DRIVE APPLICATIONS. FEATURE: High DC Current Gain @ Ic=100mA MPSA13 hFE=10,000 Min. MPSA14 hFE=20,000 Min. 1. EMITTER 2. BASE a COLLECTOR


    OCR Scan     		PDF PSA13 MPSA13 MPSA14 100mA MPS-A13) Ic-10mA MPS-A14) 100mA MPSa14 equivalent equivalent mpsa14 MPSa13 equivalent MPS-A13

    2n3904 2n3906

    Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
    Text: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64


    OCR Scan     		PDF 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2n3904 2n3906 2SC1815 2SA1015 2SC1815 2SA1015

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC IME 0 § 7tì t m 4 2 0 00 73 50 7 | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA14 T-29-29 DARLINGTON TRANSISTOR TO-92 • Collector-Emttter Voltage: Vct»= 30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF MPSA14 T-29-29 625mW 2N6427