TRANSISTOR 2SC4408 Search Results

TRANSISTOR 2SC4408 Result Highlights (5)

Part	Manufacturer	Description
LP395Z/LFT1	Texas Instruments	Ultra Reliable Power Transistor 3-TO-92
LM395T/NOPB	Texas Instruments	Ultra Reliable Power Transistor 3-TO-220 0 to 125
ULN2003ANS	Texas Instruments	High-Voltage, High-Current Darlington Transistor Arrays 16-SO
ULQ2003ADRG4	Texas Instruments	Darlington Transistor Arrays 16-SOIC
LP395Z/NOPB	Texas Instruments	Ultra Reliable Power Transistor 3-TO-92 -40 to 125

TRANSISTOR 2SC4408 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor c4408 Abstract: c4408 c4408 transistor 2SA1680 2SC4408 Contextual Info: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	2SC4408 2SA1680 transistor c4408 c4408 c4408 transistor 2SA1680 2SC4408	PDF
transistor c4408 Abstract: c4408 transistor C4408 Contextual Info: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	2SC4408 2SA1680 O-92MOD transistor c4408 c4408 transistor C4408	PDF
transistor c4408 Abstract: c4408 c4408 transistor transistor 2Sc4408 2sc4408 2SA1680 Contextual Info: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	2SC4408 2SA1680 transistor c4408 c4408 c4408 transistor transistor 2Sc4408 2sc4408 2SA1680	PDF
transistor c4408 Abstract: c4408 c4408 transistor 2SA1680 2SC4408 Contextual Info: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	2SC4408 2SA1680 transistor c4408 c4408 c4408 transistor 2SA1680 2SC4408	PDF
transistor c4408 Contextual Info: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	2SC4408 2SA1680 transistor c4408	PDF
transistor 2SA1680 Abstract: 2sa1680 TRANSISTOR Contextual Info: TOSHIBA 2SC4408 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS <;r á á ñ ñ i POWER AMPLIFIER APPLICATIONS U nit in mm POWER SWITCHING APPLICATIONS • Low Collector Saturation Voltage : V q £ (sat) “ 0.5V (Max.) • High Collector Power Dissipation	OCR Scan	2SC4408 900mW 500ns 2SA1680 75MAX 961001EAA2' transistor 2SA1680 2sa1680 TRANSISTOR	PDF
2SA1680 Abstract: 2SC4408 transistor 2SA1680 Contextual Info: TO SH IBA 2SC4408 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm 5.1 MAX. POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage v CE(sat) = °-5V (Max.) High Collector Power Dissipation PC = 900mW (Ta = 25°C)	OCR Scan	2SC4408 2SA1680 900mW 500ns 75MAX. 2SC4408 transistor 2SA1680	PDF
2SA1680 Abstract: 2SC4408 Contextual Info: TO SH IBA 2SC4408 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm POWER AMPLIFIER APPLICATIONS 5.1 MAX. POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage v CE(sat) = °-5V (Max.) High Collector Power Dissipation PC = 900mW (Ta = 25°C)	OCR Scan	2SC4408 2SA1680 900mW 500ns 75MAX 2SC4408	PDF
Contextual Info: T O SH IB A 2SC4408 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm 5.1 M A X . POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage : V qe (sat) = 0*5V (Max.) High Collector Power Dissipation : P q = 900mW (Ta = 25°C)	OCR Scan	2SC4408 900mW 500ns 2SA1680	PDF
2SA1680 Abstract: 2SC4408 Contextual Info: TOSHIBA 2SC4408 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm PO W ER AM PLIFIER APPLICATIONS 5.1 M AX. PO W ER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage : V ç;e (sat) = 0.5V (Max.) High Collector Power Dissipation : Pç; = 900mW (Ta = 25°C)	OCR Scan	2SC4408 900mW 500ns 2SA1680 75MAX 961001EAA2' 2SC4408	PDF
transistor A1680 Abstract: 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680 Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)	Original	2SA1680 2SC4408. transistor A1680 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680	PDF
transistor A1680 Abstract: 2sa1680 TRANSISTOR A1680 Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)	Original	2SA1680 2SC4408. O-92MOD transistor A1680 2sa1680 TRANSISTOR A1680	PDF
Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)	Original	2SA1680 2SC4408.	PDF
Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)	Original	2SA1680 2SC4408.	PDF

transistor 2SA1680 Abstract: 2SA1680 2SC4408 A1680 SA1680 TRANSISTOR A1680 2sa1680 TRANSISTOR Contextual Info: 2SA1680 TO SH IBA 2 S A 1 680 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 5.1 MAX Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1A )	OCR Scan	2SA1680 900mW 300ns 2SC4408. O-92MOD transistor 2SA1680 2SA1680 2SC4408 A1680 SA1680 TRANSISTOR A1680 2sa1680 TRANSISTOR	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
transistor A1680 Abstract: A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)	Original	2SA1680 2SC4408. transistor A1680 A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR	PDF
Contextual Info: T O SH IB A 2SA1680 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 Unit in mm 5.1 M AX • Low Collector Saturation Voltage : V cE (sat) = - 0 .5 V (Max.) (IC = - 1A) •	OCR Scan	2SA1680 900mW 300ns 2SC4408. 961001EAA2'	PDF
Contextual Info: TOSHIBA TRANSISTOR 2 S A 1 680 SEMICONDUCTOR TOSHIBA TECHNICAL SILICON PNP EPITAXIAL TYPE PCT PROCESS DATA (2SA1680) Unit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • • 5.1 MAX Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1A )	OCR Scan	2SA1680 2SA1680) 900mW 300ns 2SC4408. O-92MOD 2SA1680	PDF
15J102 Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811	OCR Scan	2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346	PDF
A1680 Abstract: transistor A1680 2sa1680 TRANSISTOR 2SA1680 2SC4408 transistor 2SA1680 Contextual Info: TOSHIBA 2SA1680 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 POWER AMPLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. Unit in mm 5.1 MAX • Low Collector Saturation Voltage : v CE(sat)= - 0 .5 V (Max.) (1^ = -1 A ) • High Collector Power Dissipation : Pg = 900mW (Ta = 25°C)	OCR Scan	2SA1680 900mW 300ns 2SC4408. 961001EAA2' A1680 transistor A1680 2sa1680 TRANSISTOR 2SA1680 2SC4408 transistor 2SA1680	PDF
Contextual Info: 2SA1680 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 Unit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • 5.1 MAX Low Collector Saturation Voltage : VcE(sat) = -0.5V (Max.) (IC = - 1A) High Collector Power Dissipation : P q = 900mW (Ta = 25°C)	OCR Scan	2SA1680 900mW 300ns 2SC4408. 75MAX 961001EAA2'	PDF
A1680 Abstract: transistor A1680 2SC4408 2SA1680 Contextual Info: TO SH IBA 2SA1680 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 POWER AMPLIFIER APPLICATIONS Unit in mm POWER SWITCHING APPLICATIONS 5.1 MAX. • Low Collector Saturation Voltage : V(TE(sat)“ —0.5V (Max.) (If;= —1A) • High Collector Power Dissipation : Pç; = 900mW (Ta = 25°C)	OCR Scan	2SA1680 900mW 2SC4408. 300ns A1680 transistor A1680 2SC4408 2SA1680	PDF
2SC4793 2sa1837 Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor Contextual Info: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y	Original	2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314 2SC2982 2SC5755 2SA2066 2SC5785 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor	PDF

TRANSISTOR 2SC4408 Search Results

TRANSISTOR 2SC4408 Result Highlights (5)

TRANSISTOR 2SC4408 Datasheets Context Search

transistor c4408

transistor c4408

transistor c4408

transistor c4408

transistor c4408

transistor 2SA1680

2SA1680

2SA1680

2SA1680

transistor A1680

transistor A1680

transistor 2SA1680

transistor bc 245

transistor A1680

15J102

A1680

A1680

2SC4793 2sa1837