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    2SC4408 Search Results

    2SC4408 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC4408 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: LSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA1680 Original PDF
    2SC4408 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4408 Unknown Scan PDF
    2SC4408 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4408 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC4408 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC4408 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4408 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC4408 Toshiba Silicon NPN transistor for power amplifier and power switching applications Scan PDF
    2SC4408 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SC4408(TE6,F,M) Toshiba 2SC4408 - TRANSISTOR NPN 50V 2A TO-92 Original PDF
    2SC4408TPE6 Toshiba 2SC4408 - TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF

    2SC4408 Datasheets Context Search

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    transistor c4408

    Abstract: c4408 c4408 transistor 2SA1680 2SC4408
    Text: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SC4408 2SA1680 transistor c4408 c4408 c4408 transistor 2SA1680 2SC4408

    C4408

    Abstract: 2SC4408 2SA1680
    Text: 2SC4408 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4408 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • 許容コレクタ損失が大きい。 : PC = 900 mW • スイッチング時間が速い。


    Original     		PDF 2SC4408 2SA1680 O-92MOD C4408 2SC4408 2SA1680

    transistor c4408

    Abstract: c4408 transistor C4408
    Text: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SC4408 2SA1680 O-92MOD transistor c4408 c4408 transistor C4408

    c4408

    Abstract: 2SC4408 2SA1680
    Text: 2SC4408 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4408 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • 許容コレクタ損失が大きい。 : PC = 900 mW • スイッチング時間が速い。


    Original     		PDF 2SC4408 2SA1680 O-92MOD 20070701-JA c4408 2SC4408 2SA1680

    2sc4793

    Abstract: 2SC2482 2SA1145 2SC2705 2sa1680 2SA1837 2sc2655 npn general purpose transistors application 2sd201
    Text: contents www search print index quit Power Devices ➔ ➔ • Standard Bipolar Transistors Medium Power Unit in mm LSTM TO-92 MOD VCEO PNP (V) 2SA1020 2SA1680 2SA1145 49.1 49.1 49.2 IC P hfE@ VCE (V) NPN 2SC2655 2SC2482 2SC4408 2SC2705 50 300 50 150 (A)


    Original     		PDF 2SA1020 2SA1680 2SA1145 2SC2655 2SC2482 2SC4408 2SC2705 O-220 2SA1837 2sc4793 npn general purpose transistors application 2sd201

    transistor c4408

    Abstract: c4408 c4408 transistor transistor 2Sc4408 2sc4408 2SA1680
    Text: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SC4408 2SA1680 transistor c4408 c4408 c4408 transistor transistor 2Sc4408 2sc4408 2SA1680

    transistor c4408

    Abstract: c4408 c4408 transistor 2SA1680 2SC4408
    Text: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SC4408 2SA1680 transistor c4408 c4408 c4408 transistor 2SA1680 2SC4408

    transistor c4408

    Abstract: No abstract text available
    Text: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SC4408 2SA1680 transistor c4408

    A1680

    Abstract: 2SA1680 2SC4408
    Text: 2SA1680 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1680 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −1 A)


    Original     		PDF 2SA1680 2SC4408 O-92MOD 20070701-JA A1680 2SA1680 2SC4408

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    Untitled

    Abstract: No abstract text available
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408.

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    transistor A1680

    Abstract: A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408. transistor A1680 A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR

    transistor A1680

    Abstract: 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408. transistor A1680 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680

    2SA1680

    Abstract: 2SC4408 transistor 2SA1680
    Text: TO SH IBA 2SC4408 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm 5.1 MAX. POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage v CE(sat) = °-5V (Max.) High Collector Power Dissipation PC = 900mW (Ta = 25°C)


    OCR Scan     		PDF 2SC4408 2SA1680 900mW 500ns 75MAX. 2SC4408 transistor 2SA1680

    2SC4415

    Abstract: 2SC4418 2SC4398 2SC4427 2SC4393 2SC4394 2SC4396 2SC4397 2SC4399 2SC4400
    Text: - 200 - W. n Ta=25T . *EP(àTc=25‘C) m % ffl iâ , , VCEO (V) 2SC4393 2SC4394 2SC4396 2SC4397 2SC4398 2SC4399 2SC4400 2SC4401 2SC4402 2SC4403 2SC4404 2SC4405 2SC4406 2SC4407 2SC4408 2SC4409 2SC4410 2SC4411 2SC4412 2SC4413 2SC4414 2SC4415 2SC4416 2SC4417


    OCR Scan     		PDF 2SC4393 2SC4394 2SC4396 2SC4397 2SC4398 2SC4399 2SC4400 900MHz 2SC4416 2SC4417 2SC4415 2SC4418 2SC4398 2SC4427 2SC4393 2SC4394 2SC4396 2SC4399 2SC4400

    transistor 2SA1680

    Abstract: 2sa1680 TRANSISTOR
    Text: TOSHIBA 2SC4408 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS <;r á á ñ ñ i POWER AMPLIFIER APPLICATIONS U nit in mm POWER SWITCHING APPLICATIONS • Low Collector Saturation Voltage : V q £ (sat) “ 0.5V (Max.) • High Collector Power Dissipation


    OCR Scan     		PDF 2SC4408 900mW 500ns 2SA1680 75MAX 961001EAA2' transistor 2SA1680 2sa1680 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC4408 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm 5.1 M A X . POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage : V qe (sat) = 0*5V (Max.) High Collector Power Dissipation : P q = 900mW (Ta = 25°C)


    OCR Scan     		PDF 2SC4408 900mW 500ns 2SA1680

    Untitled

    Abstract: No abstract text available
    Text: 2SC4408 SILICON NPN EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. Unit in m m POWER SWITCHING APPLICATIONS. . Low Collector Saturation Voltage : V c E ( s a t ) = - 0 . 5 V ( M a x . ) (Ic^-lA) . H i g h C o l l e c t o r P o w e r D i s s i p a t i o n : P c = 9 0 0 m W (Ta=25°C)


    OCR Scan     		PDF 2SC4408 75MAX

    2SA1680

    Abstract: 2SC4408
    Text: TOSHIBA 2SC4408 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm PO W ER AM PLIFIER APPLICATIONS 5.1 M AX. PO W ER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage : V ç;e (sat) = 0.5V (Max.) High Collector Power Dissipation : Pç; = 900mW (Ta = 25°C)


    OCR Scan     		PDF 2SC4408 900mW 500ns 2SA1680 75MAX 961001EAA2' 2SC4408

    2SA1680

    Abstract: 2SC4408
    Text: TO SH IBA 2SC4408 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm POWER AMPLIFIER APPLICATIONS 5.1 MAX. POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage v CE(sat) = °-5V (Max.) High Collector Power Dissipation PC = 900mW (Ta = 25°C)


    OCR Scan     		PDF 2SC4408 2SA1680 900mW 500ns 75MAX 2SC4408

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr