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    2SD201 Search Results

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    2SD201 Price and Stock

    Sanken Electric Co Ltd 2SD2016

    TRANS NPN DARL 200V 3A TO220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SD2016 Bulk 712 1
    • 1 $2.3
    • 10 $1.477
    • 100 $2.3
    • 1000 $0.80366
    • 10000 $0.80366
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    Verical 2SD2016 1,000 78
    • 1 -
    • 10 -
    • 100 $1.0533
    • 1000 $0.9427
    • 10000 $0.9427
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    2SD2016 431 22
    • 1 -
    • 10 -
    • 100 $1.005
    • 1000 $0.9688
    • 10000 $0.9688
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    2SD2016 338 78
    • 1 -
    • 10 -
    • 100 $1.0533
    • 1000 $1.011
    • 10000 $1.011
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    Quest Components 2SD2016 1,070
    • 1 $2.368
    • 10 $2.368
    • 100 $2.368
    • 1000 $0.9768
    • 10000 $0.888
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    Chip1Stop 2SD2016 Bulk 431
    • 1 $1.84
    • 10 $1.18
    • 100 $0.804
    • 1000 $0.775
    • 10000 $0.775
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    Sanken Electric Co Ltd 2SD2017

    TRANS NPN DARL 250V 6A TO220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SD2017 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.96176
    • 10000 $0.96176
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    Sanken Electric Co Ltd 2SD2014

    TRANS NPN DARL 80V 4A TO220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SD2014 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.7269
    • 10000 $0.7269
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    Sanken Electric Co Ltd 2SD2015

    TRANS NPN DARL 120V 4A TO220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SD2015 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.73827
    • 10000 $0.73827
    Buy Now
    Verical 2SD2015 780 76
    • 1 -
    • 10 -
    • 100 $0.4
    • 1000 $0.3888
    • 10000 $0.3888
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    Quest Components 2SD2015 16
    • 1 $1.4848
    • 10 $1.366
    • 100 $1.366
    • 1000 $1.366
    • 10000 $1.366
    Buy Now
    Chip1Stop 2SD2015 Bulk 780
    • 1 -
    • 10 $0.339
    • 100 $0.318
    • 1000 $0.309
    • 10000 $0.309
    Buy Now

    Panasonic Electronic Components 2SD2018

    TRANS NPN DARL 60V 1A TO126B-A1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SD2018 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.24946
    • 10000 $0.24946
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    2SD201 Datasheets (80)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD201 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD201 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD201 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD201 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD201 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD201 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD201 Unknown Cross Reference Datasheet Scan PDF
    2SD201 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD201 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD201 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD201 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD201 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD201 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2010 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2010 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2010 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2010 ROHM TO-92L, TO-92LS, MRT Transistors Scan PDF
    2SD2010 ROHM 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE Scan PDF
    2SD2011 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2011 Unknown Transistor Substitution Data Book 1993 Scan PDF

    2SD201 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2015

    Abstract: No abstract text available
    Text: Product Specification www.jmnic.com 2SD2015 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・DARLINGTON APPLICATIONS ・Driver for solenoid ・Relay and motor ・General purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-220F and symbol


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    PDF 2SD2015 O-220F O-220F) 2SD2015

    2SD201

    Abstract: 2SD201 0
    Text: SavantIC Semiconductor Product Specification 2SD201 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Large current capability ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications PINNING see Fig.2 PIN


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    PDF 2SD201 2SD201 2SD201 0

    2sb125

    Abstract: relay 12v 3a datasheet 2SD2014 2SB1257 relay 12v 3a Solenoid Driver Darlington
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·High DC Current Gain: hFE= 2000(Min)@IC= -3A ·Complement to Type 2SD2014 APPLICATIONS ·Driver for solenoid, relay and motor and general purpose


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    PDF 2SD2014 -10mA, 2sb125 relay 12v 3a datasheet 2SD2014 2SB1257 relay 12v 3a Solenoid Driver Darlington

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)


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    PDF 2SD2012

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)


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    PDF 2SD2012

    2SD2012

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC)


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    PDF 2SD2012 O-220F 2SD2012

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)


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    PDF 2SD2012

    Hitachi DSA002782

    Abstract: 2sd2019
    Text: 2SD2019 Silicon NPN Epitaxial ADE-208-919 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-126 MOD 2 3 1 1. Emitter 2. Collector 3. Base 2 3 ID 15 kΩ (Typ) 0.5 kΩ (Typ) 1 2SD2019 Absolute Maximum Ratings (Ta = 25°C) Item


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    PDF 2SD2019 ADE-208-919 O-126 D-85622 Hitachi DSA002782 2sd2019

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Micro Commercial Components 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)


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    PDF 2SD2012

    2SD1769

    Abstract: 2SA1568 2SC4064 2SC5370
    Text: Darlington Transistors V CBO V V CEO (V) 2SB1257 Type No. –60 –60 IC (A) PC (W) Complementary –4 (–6) 25 2SD2014 2SB1258 –100 –100 –6 (–10) 2SB1259 –120 –120 –10 (–15) –60 –60 –12 (–20) Package Remarks 2SD1785 FM20 (T0220F)


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    PDF 2SB1257 2SB1258 2SB1259 2SB1351 2SB1352 2SB1382 2SB1420 2SB1383 2SD1796 2SD2014 2SD1769 2SA1568 2SC4064 2SC5370

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2012 TO-220F TRANSISTOR NPN 1. BASE FEATURES z Audio Frequency Power Amplifier Applications z High DC Current Gain z Low Saturation Voltage z High Power Dissipation


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    PDF O-220F 2SD2012 O-220F

    Untitled

    Abstract: No abstract text available
    Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


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    PDF 2SD2012

    2SD2018

    Abstract: sick nt
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification Unit: mm 8.0+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 3.2±0.2 • Features Parameter


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    PDF 2002/95/EC) 2SD2018 2SD2018 sick nt

    2sd2012

    Abstract: No abstract text available
    Text: 2SD2012 NPN SILICON POWER TRANSISTOR • ■ ■ HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS GENERAL PURPOSE POWER AMPLIFIERS ■ GENERAL PURPOSE SWITCHING ■ DESCRIPTION The 2SD2012 is a silicon NPN power transistor


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    PDF 2SD2012 2SD2012 O-220F O-220F

    2SD2018

    Abstract: No abstract text available
    Text: Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification Unit: mm 8.0+0.5 –0.1 • Features 3.2±0.2 Parameter Symbol Rating Collector-base voltage Emitter open VCBO Collector-emitter voltage (Base open) VCEO


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    PDF 2SD2018 2SD2018

    transistor d2012

    Abstract: d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012
    Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


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    PDF 2SD2012 transistor d2012 d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012

    Untitled

    Abstract: No abstract text available
    Text: 2SD2012 TO SHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • 1 0 1 0.3 High DC Current Gain : hpE l = 100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : P q = 25W (Tc = 25°C)


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    PDF 2SD2012

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TY P E 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in . High DC Current Gain : 100 Min. 1Q3IIAX . Low Saturation Voltage 0 3 .2 ± Q 2 /- W' : VcE(sat)-l-0V(Max.)(Ic-2A, Ib =0.2A) . High Power Dissipation : Pc=25W (Tc=25°C)


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    PDF 2SD2012 O-220

    transistor 2sd2012

    Abstract: 2sd2012
    Text: 2SD2012 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hpE 1 - 100 (Min.) Low Saturation Voltage : v CE(sat) = I-0 v (Max.) High Power Dissipation : P c = 25 W (Tc = 25°C)


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    PDF 2SD2012 transistor 2sd2012 2sd2012

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO LTD S5E D • 711074]. OOOlDlfl A 7 ci ISAKJ Silicon NPN Triple Diffused Planar 2SD2014 ☆ D a rlin g to n fi«*« T«np=Ta Application Example: »Outline Drawing 4- Electrical Characteristics Symbol 2SD2014 Unit VCBO 120 V VCEO 80 V V ebo


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    PDF 2SD2014 10max 80min 3mA02 45x01 T0220)

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC SSE T> m 7 cJcJ07m 0001020 ll 57 CO L TD I SAKJ Silicon NPN Triple Diffused Planar ☆ D arlin gto n 2SD2016 • Outline Drawing 4 . .FM20 Application Example : General Purpose Electrical Characteristics Absolute Maximum Ratings


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    PDF 2SD2016 10max 200min 1000min 45x01 T0220)

    Untitled

    Abstract: No abstract text available
    Text: SSE D SANKEN ELECTRIC CO LT» • 7T1D741 DDD1011 70S H S A K J Silicon NPN Triple Diffused Planar ☆ Darlington 2SD2015 Absolute Maximum Ratings Application Example : Electrical Characteristics Ta=25°C S ym bol 2SD2015 Unit V cbo 150 V VCEO 120 V V ebo


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    PDF 7T1D741 DDD1011 2SD2015 10max 120mm 45x01 T0220)

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO LTD SSE D I • 7n0?m ISAKJ GGOIOSI 3b3 Silicon NPN Triple Diffused Planar ☆Darlington 2SD2017 A pplication Example: e Outline Driver for Solenoid, Relay and M otor, and General Purpose Drawing 4 . . F M 2 0 Electrical Characteristics


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    PDF 2SD2017 10Omax 10max 250min T0220)

    2SB1333

    Abstract: B1333 2SD2011
    Text: h 7 > y ^ £ /Transistors 2 S B 1 333 2SB1333 #-u> h >mm Epitaxial Planar PNP Silicon Transistor (Darlington l& jp lM lli^ J iS 'tiffl/L o w Freq. Power Am p. V > h > f£ tx7 1) 2) hpE K r tj« 0 3) 'x — X • 1 5 •> 4) 2SD2011 t = l > 7 U 7 < f c £ o


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    PDF 2SB1333 2SD2011 2SD2011. C/51V3 2SB1333 B1333