2SD2012 Search Results

Contextual Info: 2SD2012 TO SHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • 1 0 1 0.3 High DC Current Gain : hpE l = 100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : P q = 25W (Tc = 25°C)

Contextual Info: SILICON NPN TRIPLE DIFFUSED TY P E 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in . High DC Current Gain : 100 Min. 1Q3IIAX . Low Saturation Voltage 0 3 .2 ± Q 2 /- W' : VcE(sat)-l-0V(Max.)(Ic-2A, Ib =0.2A) . High Power Dissipation : Pc=25W (Tc=25°C)

transistor 2sd2012

Abstract: 2sd2012
Contextual Info: 2SD2012 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hpE 1 - 100 (Min.) Low Saturation Voltage : v CE(sat) = I-0 v (Max.) High Power Dissipation : P c = 25 W (Tc = 25°C)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)

2SD2012

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Micro Commercial Components 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2012 TO-220F TRANSISTOR NPN 1. BASE FEATURES z Audio Frequency Power Amplifier Applications z High DC Current Gain z Low Saturation Voltage z High Power Dissipation

Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)

2sd2012

Contextual Info: 2SD2012 NPN SILICON POWER TRANSISTOR • ■ ■ HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS GENERAL PURPOSE POWER AMPLIFIERS ■ GENERAL PURPOSE SWITCHING ■ DESCRIPTION The 2SD2012 is a silicon NPN power transistor

transistor d2012

Abstract: d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012
Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)

transistor d2012

Abstract: d2012 transistor d2012 AMPLIFIER BR D2012 2SD2012 D2012 D2012 toshiba
Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SD2012 Features • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)

Contextual Info: 2SD2012 T O SH IB A 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • 1 0 ± 0 .3 High DC Current Gain : hpE l = 100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : P(] = 25W (Tc = 25°C)

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm . High DC Current Gain : 100 Min. ia3MAX, 0 zz ± a z . Low Saturation Voltage : VCE(sat) = l*OV(Max.)(IC=2A, IB=0.2A) . High Power Dissipation : Pc=25W (Tc=25°C)

2sd2012

Abstract: 2SB1366 2SB136
Contextual Info: Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W TC=25℃ APPLICATIONS ·Audio frequency power amplifier and

2SB1375

Abstract: 2SD2012
Contextual Info: Inchange Semiconductor Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation:

2SB1375

Abstract: 2SD2012
Contextual Info: JMnic Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation: PC=25W(TC=25℃)

transistor d2012

Abstract: d2012 transistor D2012 toshiba d2012 AMPLIFIER br d2012 2SD2012 D2012
Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)

2sd2012 transistor

Abstract: 2sd2012 2SB1375
Contextual Info: TOSHIBA Discrete Semiconductors 2SD2012 Transistor Unit in mm Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier Features • High DC Current Gain : 100 Min. • Low Saturation Voltage - VCE (sat) = 1.0V (Max.) (IC = 2A, IB = 0.2A) • High Power Dissipation

D2012 toshiba

Abstract: transistor d2012 d2012 transistor br d2012 transistor 2SD2012
Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)

2SD2Q12

Contextual Info: TOSHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2Q12 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS U nit in mm 10 + 0.3 , $ 3.2 ± 0.2 2.7 ± 0 2 High DC C urrent Gain : IrpE 1 = 100 (Min.) Low Saturation Voltage V’ nVy.ci T w _( .»_ ai.\

B1375

Abstract: 2SB1375 2SD2012
Contextual Info: 2SB1375 東芝トランジスタ シリコンPNP三重拡散形 2SB1375 ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE sat = −1.5 V (最大) (IC = −2 A, IB = −0.2 A) • コレクタ損失が大きい。 • 2SD2012 とコンプリメンタリになります。