2SC4681 Search Results

C4681

Abstract: 7B1A 2SA1802 2SC4681
Contextual Info: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)

2SA1802

Abstract: 2SC4681
Contextual Info: T O S H IB A 2SC4681 2SC4681 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • Excellent hjpg Linearity : hFE 1 = 200-600 (Vce = 2 V, IC = 0.5 A) : hFE (2) = 140 (Min.) (VCE = 2 V, Ic = 3 A)

Contextual Info: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)

Contextual Info: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)

7B1A

Abstract: 2SA1802 2SC4681 C4681
Contextual Info: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)

Contextual Info: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)

2SA1802

Abstract: 2SC4681
Contextual Info: T O S H IB A 2SC4681 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4681 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS A 6.8MAX., • • • • Excellent hpg Linearity : hFE (1) = 200-600 (Vc e = 2 V, In = 0.5 A) : hFE (2) = 140 (Min.) (VCE = 2V,~IC = 3 A)

Contextual Info: TOSHIBA 2SC4681 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4681 Unit in mm STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. • E x c e lle n t h p g L in e a r i t y ' hFE 1 = 200—600 (Vce = 2V, Ic = 0.5A) : hFE (2) —140 (Min.) (VCE = 2V, IC = SA)

05ah

Contextual Info: 2SC4681 SILICON NPN EPITAXIAL TYPE STROBF FLASH APPLICATIONS. MFOIUM POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: • Excellent h p E Linearity : h F E f l v=200~600 Vc e =2V, Ic =0.5A : h p E (2 )“140 (Min.) (VCE=2V, IC=3A) • L o w Collector Saturation Voltage

Contextual Info: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)

Contextual Info: TOSHIBA 2SC4681 TO SH IBA TRA NSISTO R SILICON NPN EPITAXIAL TYPE 2SC4681 STROBE FLASH APPLICATIO NS M E D IU M P O W ER A M PLIFIER APPLICATIO NS • Excellent hpE Linearity : hFE i = 200-600 (Vc e = 2 V, Iq = 0.5 A) : hFE (2) = 140 (Min.) (Vqe = 2 V, Ic = 3 A)

2SA1802

Abstract: 2SC4681
Contextual Info: T O S H IB A 2SC4681 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC4681 MEDIUM POWER AMPLIFIER APPLICATIONS • • • • E x cellen t hFE L inearity : hFE 1 = 2 0 0 - 6 0 0 (V c e = 2 V , I c = 0.5 A) : h pE (2) = 140 (M in.) (V q e = 2 V , I c = 3 A)

Contextual Info: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)

2SC468

Abstract: 2SA1802 2SC4681
Contextual Info: T O S H IB A 2SC4681 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4681 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS A 6.8MAX., 0.6MAX. 5.2 ±0.2 • • • • Excellent hjpg Linearity : hFE (1) = 200-600 (Vc e = 2 V, Ic = 0.5 A)

A1241

Abstract: c4684 2_s transistors c3072 B834 SA1357 c4793
Contextual Info: S urface Mo unt Device 4 Power Mold Transistors (D PACK) E lectrical C h a ra cte ristics {T a= 2 5°C ) A p plication T yp e No. VCEO (V) Ic (A) Pc (W ) Pc* (W ) Tj (°C) C o m plem en tary 2 S A 1225 D rive r stage. Pow er am plification. -160 -1.5 1.0

Contextual Info: 2SA1802 TO SH IBA TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE 2 S A 1 802 Unit in mm A MEDIUM POWER AMPLIFIER APPLICATIONS 6.8MAX., < 0.6M AX. -tf- 5.2 ±0 .2 rll • Excellent hjpg Linearity • h -n n • * * rH i • •

2SA1802

Abstract: 2SC4681 A1802
Contextual Info: 2SA1802 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 802 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • • • Excellent hpE Linearity : hFE l = 200-600 (Vc e = -2 V , Ic = -0 .5 A) : hFE(2) - 140 (Min.) (Vc e = -2 V , Iq = - 3 A)

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

Contextual Info: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)

Contextual Info: T O SH IB A 2SA1802 TENTATIVE TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 802 STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. U nit in mm & 8 MAX. • Excellent h p g Linearity : h pE l = 200"-600 (V c e = —2V, I(j = —0.5A)

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

7B1A

Abstract: 2SA1802 2SC4681 A1802
Contextual Info: 2SA1802 TO SHIBA TENTATIVE 2 S A 1 802 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm STROBE FLASH APPLICATIONS. M E D IU M POWER AMPLIFIER APPLICATIONS. • a 8 MAX. Excellent hEE Linearity : hFE 1 = 200-600(VCE= -2 V , Ic = -0.5A) : hFE(2) = 140 (Min.) (VCE = -2 V , IC= -3 A )

Contextual Info: TOSHIBA 2SA1802 2 S A 1 802 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE STROBE FLASH APPLICATIONS M E D IU M POWER AMPLIFIER APPLICATIONS • Excellent hjpg Linearity : hFE i = 200-600 (Vc e = -2 V , Ic = -0 .5 A) : hFE (2) = 140 (Min.) (VCE = -2 V , IC = -3 A )