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    2SC3670 Search Results

    2SC3670 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC3670 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: MSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA1430 Original PDF
    2SC3670 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3670 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3670 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3670 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3670 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3670 Toshiba Silicon NPN transistor for strobo flash applications and medium power amplifier applications Scan PDF
    2SC3670 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SC3670A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3670A Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF
    2SC3670-A Toshiba Strobe Flash Apps Scan PDF
    2SC3670B Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3670B Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF
    2SC3670-B Toshiba Strobe Flash Apps Scan PDF
    2SC3670C Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3670C Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF
    2SC3670-C Toshiba Strobe Flash Apps Scan PDF
    2SC3670D Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3670D Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF
    2SC3670-D Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF

    2SC3670 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2-7D101A

    Abstract: 2SC3670
    Text: TO SH IBA 2SC3670 TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS -iS-, 7.1 M A X • • High DC Current Gain and Excellent hjpE Linearity hjrE (1) —140—600


    OCR Scan     		2SC3670 2-7D101A 2SC3670 PDF

    2-7D101A

    Abstract: 2SC3670
    Text: TO SH IB A 2SC3670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm STOROBO FLASH APPLICATIONS MEDIUM PO W ER AM PLIFIER APPLICATIONS • 7.1 M AX High DC Current Gain and Excellent hpg Linearity : hpE (i) = 140~600 : hFE(2) = 70 (Min.), 200 (Typ.)


    OCR Scan     		2SC3670 961001EAA2' 2-7D101A 2SC3670 PDF

    2-7D101A

    Abstract: 2SC3670
    Text: TO SH IBA 2SC3670 TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS 7.1 MAX • • High DC Current Gain and Excellent hEE Linearity hEE (1) —140—600 ^FE (2) “ 70 (Min.), 200 (Typ.)


    OCR Scan     		2SC3670 2-7D101A 2SC3670 PDF

    2-7D101A

    Abstract: 2SC3670
    Text: TOSHIBA 2SC3670 TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • • 7.1 MAX High DC Current Gain and Excellent hpE Linearity : ^FE (1) —140—600 : hFE( 2 ) = ?0 (Min.), 200 (Typ.)


    OCR Scan     		2SC3670 961001EAA2' 2-7D101A 2SC3670 PDF

    C3670

    Abstract: 2-7D101A 2SC3670
    Text: 2SC3670 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3670 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高くリニアリティ良好: hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (最小), 200 (標準),


    Original     		2SC3670 2-7D101A 20070701-JA C3670 2-7D101A 2SC3670 PDF

    2-7D101A

    Abstract: 2SC3670 C3670
    Text: 2SC3670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)


    Original     		2SC3670 2-7D101A 2SC3670 C3670 PDF

    2-7D101A

    Abstract: 2SC3670 C3670
    Text: 2SC3670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.)


    Original     		2SC3670 2-7D101A 2SC3670 C3670 PDF

    c3670

    Abstract: 2SC3670 2-7D101A
    Text: 2SC3670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)


    Original     		2SC3670 c3670 2SC3670 2-7D101A PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC3670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS 7.1 MAX • • High DC Current Gain and Excellent hjrg Linearity : hjp;E (i) = 140~600 : hFE(2) = 70 (Min.), 200 (Typ.)


    OCR Scan     		2SC3670 961001EAA2' PDF

    2SC4793 2sa1837

    Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
    Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y


    Original     		2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314 2SC2982 2SC5755 2SA2066 2SC5785 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)


    Original     		2SC3670 PDF

    C3670

    Abstract: 2-7D101A 2SC3670
    Text: 2SC3670 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3670 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高くリニアリティ良好: hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (最小), 200 (標準),


    Original     		2SC3670 2-7D101A C3670 2-7D101A 2SC3670 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC367Q Unit in mm STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • 7.1 MAX High DC Current Gain and Excellent hjrE Linearity : ^FE (1) = 140—600 : hFE(2) = 70 (Min.), 200 (Typ.)


    OCR Scan     		2SC3670 2SC367Q 961001EAA2' PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr PDF

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent PDF

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 PDF

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 PDF

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    2sd2396

    Abstract: 2SD2005 2SC4614 2SD1547 2SD1554 2SD2004 2SC4290A 2sc4814 2SC4040 2SD1650
    Text: - ü £ T y p e No. / 2SD 2337 fö T te t te t te t s a 2SD 2338 □ — a t 2SD 2333 2SD 2334 ^ 2SD 2335 ^ 2SD 2336 / M anu f. « h m SANYO M TOSHIBA =£ « B HITACHI ÍI 2SD143Î 2SD23D0 2SD1878 2SD1545 2SD2311 2SD2252 2SD1547 2SC4744 2SD2251 2SD1547 2SC2882


    OCR Scan     		2SD2333 2SD1884 2SD1878 2SD2252 2SD2251 2SD143Î 2SD1545 2SD1547 2SD1587 2sd2396 2SD2005 2SC4614 2SD1554 2SD2004 2SC4290A 2sc4814 2SC4040 2SD1650 PDF

    2sc4496a

    Abstract: 2SD3181 2Sc3246 2sc3928 2SC3209 4468 2SC2644 2SD1404 2SD773 2sc3514
    Text: - SI « T y p e No. tt « Manuf. Z i# SANYO it 2? TOSHIBA ÌL 2SC4403 ÎL 2SC4854 2SC2644 2 SC 4468 ^ V- v i r v 2SD1047 2SC3182N 2SC 4469 * ± S 1 * 2SC 4470 * 2SC 4472 n —U — :í¿ 2SC 4473 _ 2SC 4474 3 # 2SC 4477 h m NEC HITACHI 2SC4478 ± Ä F U JITSU


    OCR Scan     		2SC4403 2SC4187 2SC4854 2SC2644 2SD1047 2SC3182N 2SC2989 2SC4278 2SC3307 2SC3508 2sc4496a 2SD3181 2Sc3246 2sc3928 2SC3209 4468 2SC2644 2SD1404 2SD773 2sc3514 PDF