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TPSE106K050R0400 Price and Stock

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Kyocera AVX Components TPSE106K050R0400 CAP TANT 10UF 10% 50V 2917
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	TPSE106K050R0400	Cut Tape	1,101		1	1 $2.57 10 $1.764 100 $1.3463 1000 $1.3463 10000 $1.3463	Buy Now
	TPSE106K050R0400	Digi-Reel	1,101		1	1 $2.57 10 $1.764 100 $1.3463 1000 $1.3463 10000 $1.3463	Buy Now
	TPSE106K050R0400	Reel	800		400	1 - 10 - 100 - 1000 $1.14335 10000 $1.05023	Buy Now
Avnet Americas	TPSE106K050R0400	Reel	3,200	13 Weeks	400	1 - 10 - 100 - 1000 $0.88238 10000 $0.84	Buy Now
Mouser Electronics	TPSE106K050R0400		1,312			1 $2.75 10 $1.96 100 $1.48 1000 $1.03 10000 $0.952	Buy Now
Newark ()	TPSE106K050R0400	Reel	3,200		400	1 $0.887 10 $0.887 100 $0.887 1000 $0.887 10000 $0.887	Buy Now
	TPSE106K050R0400	Cut Tape			400	1 - 10 - 100 $1.22 1000 $1.22 10000 $1.22	Buy Now
	TPSE106K050R0400	Reel			400	1 - 10 - 100 - 1000 $0.962 10000 $0.923	Buy Now
Bristol Electronics ()	TPSE106K050R0400		245			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	TPSE106K050R0400		174			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Quest Components ()	TPSE106K050R0400		12,800			1 $2.82 10 $2.82 100 $2.82 1000 $1.0575 10000 $1.0575	Buy Now
	TPSE106K050R0400		5			1 $1.7625 10 $1.6215 100 $1.6215 1000 $1.6215 10000 $1.6215	Buy Now
TTI ()	TPSE106K050R0400	Reel	6,800		400	1 - 10 - 100 - 1000 $0.9 10000 $0.81	Buy Now
	TPSE106K050R0400	Cut Tape	450		10	1 - 10 $2.75 100 $2.75 1000 $2.75 10000 $2.75	Buy Now
TME	TPSE106K050R0400		400		1	1 $2.27 10 $1.7 100 $1.23 1000 $1 10000 $1	Buy Now
Avnet Abacus	TPSE106K050R0400	Reel		14 Weeks	400	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Asia	TPSE106K050R0400			12 Weeks	400	1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	TPSE106K050R0400		400		1	1 $2.23 10 $2.23 100 $1.75 1000 $1.75 10000 $1.75	Buy Now
Kyocera AVX Components TPSE106K050R0400V Surface Mount Tantalum Capacitor, 10 uF, 50 V, ? 10%, -55 ?C, 125 ?C, 2917 [7343-43 Metric] - Tape and Reel (Alt: TPSE106K050R0400V)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TPSE106K050R0400V	Reel		13 Weeks	400	1 - 10 - 100 - 1000 $1.38909 10000 $1.3248	Buy Now
Mouser Electronics	TPSE106K050R0400V		112			1 $4.05 10 $2.93 100 $2.25 1000 $1.59 10000 $1.53	Buy Now
RS	TPSE106K050R0400V	Bulk		21 Weeks	400	1 - 10 - 100 - 1000 $3.8 10000 $3.23	Get Quote
TTI	TPSE106K050R0400V	Reel	49,600		400	1 - 10 - 100 - 1000 $1.38 10000 $1.38	Buy Now
Avnet Abacus	TPSE106K050R0400V			14 Weeks	400	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Kyocera AVX Components TPSE106K050S0400 Tantalum Capacitors - Solid SMD 50V 10uF 10%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TPSE106K050S0400					1 - 10 - 100 - 1000 - 10000 $4.68	Get Quote
KYOCERA AVX Components TPSE106K050R0400 Cap Tant Solid 10uF 50V E CASE 10%( 7.3 X 4.3 X 4.1mm) Inward L SMD 7343-43 0.4 Ohm 125°C T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	TPSE106K050R0400		400		30	1 - 10 - 100 $2.366 1000 $2.366 10000 $2.366	Buy Now

TPSE106K050R0400 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TPSE106K050R0400		AVX	Low ESR Tantalum Capacitor		Original	PDF
TPSE106K050R0400		AVX	CAP 10UF 100V 50V TANT SMD-7343-43 TR-7 LOWESR-400		Original	PDF

TPSE106K050R0400 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LM7805 smd Abstract: BCP56 LM7805 PTF081301E PTF081301F transistor SMD LOA DD 127 D TRANSISTOR Contextual Info: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest	Original	PTF081301E PTF081301F PTF081301E PTF081301F 130-watt, LM7805 smd BCP56 LM7805 transistor SMD LOA DD 127 D TRANSISTOR	PDF
transistor di 960 Contextual Info: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications	Original	PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-34288-2 transistor di 960	PDF
LM7805 Abstract: elna 50v BCP56 PTFA082201E PTFA082201F RO4350 Contextual Info: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in	Original	PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt LM7805 elna 50v BCP56 RO4350	PDF
LM7805 M SMD Abstract: LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805 PTF210101M Contextual Info: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in	Original	PTF210101M PTF210101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805	PDF
BCP56 Abstract: LM7805 PTFA091201GL PTFA091201HL A0912 Contextual Info: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in	Original	PTFA091201GL PTFA091201HL PTFA091201GL PTFA091201HL 120-watt PG-63248-2 PG-64248-2 BCP56 LM7805 A0912	PDF
LM7805 Abstract: elna 50v, 1uF LM7805 voltage regulator d 1879 TRANSISTOR BCP56 PTFA181001GL ELNA capacitor 100 uf 50v Contextual Info: Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the	Original	PTFA181001GL PTFA181001HL PTFA181001GL 100-watt LM7805 elna 50v, 1uF LM7805 voltage regulator d 1879 TRANSISTOR BCP56 ELNA capacitor 100 uf 50v	PDF
ATC-600A Abstract: BCP56 LM7805 PTFA212001E PTFA212001F RO4350 Contextual Info: PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier	Original	PTFA212001E PTFA212001F PTFA212001E PTFA212001F 200-watt H-36260-2 H-37260-2 ATC-600A BCP56 LM7805 RO4350	PDF
a2324 Abstract: PTFA192401E PTFA192401F RF35 RO4350 BCP56 LM7805 PTFA192401F V4 Contextual Info: PTFA192401E PTFA192401F Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,	Original	PTFA192401E PTFA192401F PTFA192401E PTFA192401F 240-watt H-36260-2 H-37260-2 a2324 RF35 RO4350 BCP56 LM7805 PTFA192401F V4	PDF
Contextual Info: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in	Original	PTFA091201E PTFA091201F PTFA091201E PTFA091201F 120-watt H-36248-2 H-37248-2	PDF
C109 ceramic capacitor Abstract: TL235 Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235	PDF
C205 Contextual Info: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications	Original	PTFB191501E PTFB191501F PTFB191501E PTFB191501F 150-watt H-36248-2 H-37248-2 C205	PDF
elna capacitor 22uf Contextual Info: PTFA041001E PTFA041001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 460 – 470 MHz Description The PTFA041001E and PTFA041001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for GSM/ EDGE applications. Thermally-enhanced packaging provides the	Original	PTFA041001E PTFA041001F 100-watt, H-30248-2 PTFA041001FT H-31248-2 elna capacitor 22uf	PDF
LM7805 smd Abstract: LM7805 smd transistor marking C14 Contextual Info: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency	Original	PTF180101M PTF180101M 10-watt PTF180101M* TSSOP-10 LM7805 smd LM7805 smd transistor marking C14	PDF
Contextual Info: PTFA192001E PTFA192001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,	Original	PTFA192001E PTFA192001F 200-watt H-36260-2 H-37260-2	PDF

d683 Abstract: elna 50v BCP56 LM7805 PTFA181001GL Contextual Info: PTFA181001GL Use GL only Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805 – 1880 MHz Description The PTFA181001GL is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz	Original	PTFA181001GL PTFA181001GL 100-watt d683 elna 50v BCP56 LM7805	PDF
PTFA212001E Abstract: ATC-600A PTFA212001F LM7805 05 marking us capacitor pf l1 BCP56 LM7805 RO4350 A212001E PTFA212001EV4 Contextual Info: PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier	Original	PTFA212001E PTFA212001F PTFA212001E PTFA212001F 200-watt H-36260-2 H-37260-2 ATC-600A LM7805 05 marking us capacitor pf l1 BCP56 LM7805 RO4350 A212001E PTFA212001EV4	PDF
C66065-A2326-C001-01-0027 Abstract: transistor a102 r025 capacitor elna 50v INFINEON schematic diagram 200B BCP56 LM7805 PTFA070601E PTFA070601F Contextual Info: PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz Description The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770	Original	PTFA070601E PTFA070601F PTFA070601E PTFA070601F 60-watt H-36265-2 H-37265-2 C66065-A2326-C001-01-0027 transistor a102 r025 capacitor elna 50v INFINEON schematic diagram 200B BCP56 LM7805	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
a2324 Abstract: H-37260-2 elna 50v LM7805 05 BCP56 LM7805 PTFA092201E PTFA092201F RO4350 Contextual Info: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced	Original	PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2 a2324 H-37260-2 elna 50v LM7805 05 BCP56 LM7805 RO4350	PDF
200B Abstract: BCP56 LM7805 PTFA260851E PTFA260851F Contextual Info: PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz Description The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to	Original	PTFA260851E PTFA260851F PTFA260851E PTFA260851F 85-watt 200B BCP56 LM7805	PDF
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145	PDF
100uf HFK Abstract: HFK CAPACITOR 100 HFK capacitor Contextual Info: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications	Original	PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-33288-2 H-34288-2 100uf HFK HFK CAPACITOR 100 HFK capacitor	PDF
Contextual Info: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in	Original	PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt	PDF
TRANSISTOR tl131 Contextual Info: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include	Original	PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131	PDF

TPSE106K050R0400 Search Results

TPSE106K050R0400 Price and Stock

Kyocera AVX Components TPSE106K050R0400

Kyocera AVX Components TPSE106K050R0400V

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KYOCERA AVX Components TPSE106K050R0400

TPSE106K050R0400 Datasheets (2)

TPSE106K050R0400 Datasheets Context Search

LM7805 smd

transistor di 960

LM7805

LM7805 M SMD

BCP56

LM7805

ATC-600A

a2324

C109 ceramic capacitor

C205

elna capacitor 22uf

LM7805 smd

d683

PTFA212001E

C66065-A2326-C001-01-0027

schematic diagram atx Power supply 500w

a2324

200B

TL139

100uf HFK

TRANSISTOR tl131