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    TPSE106K050R0400 Price and Stock

    Kyocera AVX Components TPSE106K050R0400

    Surface Mount Tantalum Capacitor, 10 uF, 50 V, ? 10%, -55 ?C, 125 ?C, 2917 [7343-43 Metric] - Tape and Reel (Alt: TPSE106K050R0400)
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    Avnet Americas TPSE106K050R0400 Reel 4,000 13 Weeks 400
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    Mouser Electronics TPSE106K050R0400 1,312
    • 1 $11.82
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    Newark TPSE106K050R0400 Cut Tape 400
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    TPSE106K050R0400 Reel 400
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    Future Electronics TPSE106K050R0400 Reel 13 Weeks 400
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    Quest Components TPSE106K050R0400 12,800
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    TPSE106K050R0400 5
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    TTI TPSE106K050R0400 Reel 8,000 400
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    TPSE106K050R0400 Cut Tape 450 10
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    TME TPSE106K050R0400 400 1
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    Avnet Abacus TPSE106K050R0400 Reel 14 Weeks 400
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    New Advantage Corporation TPSE106K050R0400 400 1
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    Kyocera AVX Components TPSE106K050R0400V

    Surface Mount Tantalum Capacitor, 10 uF, 50 V, ? 10%, -55 ?C, 125 ?C, 2917 [7343-43 Metric] - Tape and Reel (Alt: TPSE106K050R0400V)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TPSE106K050R0400V Reel 13 Weeks 400
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    Mouser Electronics TPSE106K050R0400V 112
    • 1 $4.2
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    RS TPSE106K050R0400V Bulk 21 Weeks 400
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    TTI TPSE106K050R0400V Reel 52,400 400
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    Avnet Abacus TPSE106K050R0400V 14 Weeks 400
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    Kyocera AVX Components TPSE106K050S0400

    Tantalum Capacitors - Solid SMD 50V 10uF 10%
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    Mouser Electronics TPSE106K050S0400
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    KYOCERA AVX Components TPSE106K050R0400

    Cap Tant Solid 10uF 50V E CASE 10%( 7.3 X 4.3 X 4.1mm) Inward L SMD 7343-43 0.4 Ohm 125°C T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical TPSE106K050R0400 400 39
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    TPSE106K050R0400 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPSE106K050R0400 AVX Low ESR Tantalum Capacitor Original PDF
    TPSE106K050R0400 AVX CAP 10UF 100V 50V TANT SMD-7343-43 TR-7 LOWESR-400 Original PDF

    TPSE106K050R0400 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LM7805 smd

    Abstract: BCP56 LM7805 PTF081301E PTF081301F transistor SMD LOA DD 127 D TRANSISTOR
    Text: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest


    Original     		PTF081301E PTF081301F PTF081301E PTF081301F 130-watt, LM7805 smd BCP56 LM7805 transistor SMD LOA DD 127 D TRANSISTOR PDF

    transistor di 960

    Abstract: No abstract text available
    Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


    Original     		PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-34288-2 transistor di 960 PDF

    LM7805

    Abstract: elna 50v BCP56 PTFA082201E PTFA082201F RO4350
    Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in


    Original     		PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt LM7805 elna 50v BCP56 RO4350 PDF

    LM7805 M SMD

    Abstract: LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805 PTF210101M
    Text: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PTF210101M PTF210101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805 PDF

    BCP56

    Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
    Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


    Original     		PTFA091201GL PTFA091201HL PTFA091201GL PTFA091201HL 120-watt PG-63248-2 PG-64248-2 BCP56 LM7805 A0912 PDF

    LM7805

    Abstract: elna 50v, 1uF LM7805 voltage regulator d 1879 TRANSISTOR BCP56 PTFA181001GL ELNA capacitor 100 uf 50v
    Text: Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the


    Original     		PTFA181001GL PTFA181001HL PTFA181001GL 100-watt LM7805 elna 50v, 1uF LM7805 voltage regulator d 1879 TRANSISTOR BCP56 ELNA capacitor 100 uf 50v PDF

    ATC-600A

    Abstract: BCP56 LM7805 PTFA212001E PTFA212001F RO4350
    Text: PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier


    Original     		PTFA212001E PTFA212001F PTFA212001E PTFA212001F 200-watt H-36260-2 H-37260-2 ATC-600A BCP56 LM7805 RO4350 PDF

    a2324

    Abstract: PTFA192401E PTFA192401F RF35 RO4350 BCP56 LM7805 PTFA192401F V4
    Text: PTFA192401E PTFA192401F Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,


    Original     		PTFA192401E PTFA192401F PTFA192401E PTFA192401F 240-watt H-36260-2 H-37260-2 a2324 RF35 RO4350 BCP56 LM7805 PTFA192401F V4 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


    Original     		PTFA091201E PTFA091201F PTFA091201E PTFA091201F 120-watt H-36248-2 H-37248-2 PDF

    C109 ceramic capacitor

    Abstract: TL235
    Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235 PDF

    C205

    Abstract: No abstract text available
    Text: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications


    Original     		PTFB191501E PTFB191501F PTFB191501E PTFB191501F 150-watt H-36248-2 H-37248-2 C205 PDF

    elna capacitor 22uf

    Abstract: No abstract text available
    Text: PTFA041001E PTFA041001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 460 – 470 MHz Description The PTFA041001E and PTFA041001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for GSM/ EDGE applications. Thermally-enhanced packaging provides the


    Original     		PTFA041001E PTFA041001F 100-watt, H-30248-2 PTFA041001FT H-31248-2 elna capacitor 22uf PDF

    LM7805 smd

    Abstract: LM7805 smd transistor marking C14
    Text: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency


    Original     		PTF180101M PTF180101M 10-watt PTF180101M* TSSOP-10 LM7805 smd LM7805 smd transistor marking C14 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA192001E PTFA192001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,


    Original     		PTFA192001E PTFA192001F 200-watt H-36260-2 H-37260-2 PDF

    d683

    Abstract: elna 50v BCP56 LM7805 PTFA181001GL
    Text: PTFA181001GL Use GL only Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805 – 1880 MHz Description The PTFA181001GL is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz


    Original     		PTFA181001GL PTFA181001GL 100-watt d683 elna 50v BCP56 LM7805 PDF

    PTFA212001E

    Abstract: ATC-600A PTFA212001F LM7805 05 marking us capacitor pf l1 BCP56 LM7805 RO4350 A212001E PTFA212001EV4
    Text: PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier


    Original     		PTFA212001E PTFA212001F PTFA212001E PTFA212001F 200-watt H-36260-2 H-37260-2 ATC-600A LM7805 05 marking us capacitor pf l1 BCP56 LM7805 RO4350 A212001E PTFA212001EV4 PDF

    C66065-A2326-C001-01-0027

    Abstract: transistor a102 r025 capacitor elna 50v INFINEON schematic diagram 200B BCP56 LM7805 PTFA070601E PTFA070601F
    Text: PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz Description The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770


    Original     		PTFA070601E PTFA070601F PTFA070601E PTFA070601F 60-watt H-36265-2 H-37265-2 C66065-A2326-C001-01-0027 transistor a102 r025 capacitor elna 50v INFINEON schematic diagram 200B BCP56 LM7805 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    a2324

    Abstract: H-37260-2 elna 50v LM7805 05 BCP56 LM7805 PTFA092201E PTFA092201F RO4350
    Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced


    Original     		PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2 a2324 H-37260-2 elna 50v LM7805 05 BCP56 LM7805 RO4350 PDF

    200B

    Abstract: BCP56 LM7805 PTFA260851E PTFA260851F
    Text: PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz Description The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to


    Original     		PTFA260851E PTFA260851F PTFA260851E PTFA260851F 85-watt 200B BCP56 LM7805 PDF

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 PDF

    100uf HFK

    Abstract: HFK CAPACITOR 100 HFK capacitor
    Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


    Original     		PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-33288-2 H-34288-2 100uf HFK HFK CAPACITOR 100 HFK capacitor PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in


    Original     		PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt PDF

    TRANSISTOR tl131

    Abstract: No abstract text available
    Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include


    Original     		PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131 PDF