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Rochester Electronics LLC TL170CLP MAGNETIC SWITCH HALL EFFECT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TL170CLP	Bulk	7,256		381	1 - 10 - 100 - 1000 $0.79 10000 $0.79	Buy Now
Honeywell Sensing and Control 4TL1-70 SWITCH TOGGLE 4PDT 10A 125V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	4TL1-70	Bulk	50		1	1 $106 10 $92.912 100 $92.912 1000 $92.912 10000 $92.912	Buy Now
Mouser Electronics	4TL1-70		45			1 $106 10 $106 100 $104.37 1000 $104.37 10000 $104.37	Buy Now
Newark	4TL1-70	Bulk			50	1 - 10 - 100 $127.85 1000 $127.85 10000 $127.85	Buy Now
RS	4TL1-70	Bulk	17	90 Weeks	1	1 $130.46 10 $130.46 100 $130.46 1000 $130.46 10000 $130.46	Buy Now
TTI	4TL1-70	Each			50	1 - 10 - 100 $89.6 1000 $86.92 10000 $86.92	Buy Now

TME	4TL1-70				10	1 - 10 $130.39 100 $116.9 1000 $116.9 10000 $116.9	Get Quote
Master Electronics	4TL1-70		56			1 $111.62 10 $94.74 100 $87.02 1000 $87.02 10000 $87.02	Buy Now
Honeywell Sensing and Control 2TL1-70E SWITCH TOGGLE DPDT 10A 125V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2TL1-70E	Bulk			50	1 - 10 - 100 $83.484 1000 $83.484 10000 $83.484	Buy Now
Newark	2TL1-70E	Bulk			50	1 $130.8 10 $130.8 100 $111.17 1000 $98.1 10000 $85.02	Buy Now
RS	2TL1-70E	Bulk	49	55 Weeks	1	1 $104.36 10 $88.7 100 $88.7 1000 $88.7 10000 $88.7	Buy Now
Master Electronics	2TL1-70E					1 - 10 - 100 $85.22 1000 $85.22 10000 $85.22	Buy Now
Honeywell Sensing and Control 12TL1-70 SWITCH TOGGLE DPDT 10A 125V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	12TL1-70	Bulk			20	1 - 10 - 100 $43.2025 1000 $43.2025 10000 $43.2025	Buy Now
Honeywell Sensing and Control 4TL1-70N SEALED OI SWITCH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	4TL1-70N	Bulk			50	1 - 10 - 100 $96.9044 1000 $96.9044 10000 $96.9044	Buy Now
Mouser Electronics	4TL1-70N					1 - 10 - 100 $122.89 1000 $122.89 10000 $122.89	Get Quote
Newark	4TL1-70N	Bulk			50	1 - 10 - 100 $116.93 1000 $116.93 10000 $116.93	Buy Now
RS	4TL1-70N	Bulk		72 Weeks	50	1 - 10 - 100 $131 1000 $131 10000 $131	Get Quote
Master Electronics	4TL1-70N					1 - 10 - 100 $97.44 1000 $97.44 10000 $97.44	Buy Now

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TL170 Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
TL1705800000G	Amphenol Anytek	Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 17POS TOP ENTRY 5MM PCB	Original	PDF
TL1709	Telefunken Electronic	Electronic Component Data Book 1976	Scan	PDF
TL1709	Telefunken Electronic	Integrated Circuits 1977	Scan	PDF
TL1709C	Telefunken Electronic	Electronic Component Data Book 1976	Scan	PDF
TL1709C	Telefunken Electronic	Integrated Circuits 1977	Scan	PDF
TL170C	Texas Instruments	SILICON HALL-EFFECT SWITCH	Scan	PDF
TL170CLP	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

TL170 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TL170C Abstract: TL170 L70C tesla switch Tesla sensor ERO Electronic irf540 TTL tesla NZ 70 tl170 hall tl170 hall effect Text: TL170C SIUCON HAU-EFFECT SWITCH 0 3 4 0 0 , D E C E M B E R 1877. R fV tS C O A P M L 1 0 M • Magnetfc-FWd Sensing Hall-Effect Input • On-Off Hysteresis • Small SI*« • Solid-State Technology • Open-Coiector Output description The T L17 0C is s low-cost magnetteal ly operated	OCR Scan	TL170C TL170C TL170 SS6012 L70C tesla switch Tesla sensor ERO Electronic irf540 TTL tesla NZ 70 tl170 hall tl170 hall effect	PDF
TL170 Abstract: TL170C TESLA transistor l170c TL 170C Text: TL170C SILICON HALL-EFFECT SWITCH D 2 4 0 8 , DECEMBER 1 9 7 7 , REVISED APRIL 1 9 8 8 • Magnetic-Field Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output description The TL 170C is a low-cost magnetically operated	OCR Scan	TL170C TL170 TESLA transistor l170c TL 170C	PDF
tl170 hall effect Abstract: tl170 hall TL170C TL170 CT SENSOR AX2535 Text: TL170C SILICON HALL-EFFECT SWITCH • Magnetic-Fleld Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Coilector Output D24Q8, DECEMBER 1977. REVISED APRIL 1988	OCR Scan	TL170C D24Q8, TL170 tl170 hall effect tl170 hall CT SENSOR AX2535	PDF
L298D Abstract: SAS251S4 ugn3013 SAS251 UCN4815A ULN3782M UDN2981LW uc3646 mc1417p CA1725E Text: AMS-105 GENERAL INFORMATION SEMICONDUCTOR CROSS REFERENCE in Alpha-Numerical Order The suggested Allegro replacement devices are based on similarity as shown in currently published data. Exact replacement in all applications is not guaranteed and the user should compare the specifications of the competitive and recommended Allegro replacement. Special caution must be exercised in attempting to do a reverse cross. In some instances, the competitive device is obsolete; in	Original	AMS-105 LX8020" CS2930" CS298" L298D SAS251S4 ugn3013 SAS251 UCN4815A ULN3782M UDN2981LW uc3646 mc1417p CA1725E	PDF
k2645 Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt	Original	MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417	PDF
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan		PDF
LM7805ACH-ND Abstract: TL174 tl173 PTVA035002EV V1 Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1	PDF
TL272 Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148	PDF
103SR5A-1 Abstract: SS81CA tl173c TL3019 SS44A 3144EUA CYD512 tl3020 UGN3503U 55SS16 Text: BB AUTOMAÇÃO www.bbautomacao.com Cross References of Hall Sensors/Switches The suggested replacement devices are based on similarity as shown in currently published data. Exact replacement in all applications is not guaranteed and the user should compare the	Original	UGN3503U 3503U DN6839 A3121EU 3121U DN6847/6849TE A3187LUA 3175UA DN6848TE A3141LUA 103SR5A-1 SS81CA tl173c TL3019 SS44A 3144EUA CYD512 tl3020 UGN3503U 55SS16	PDF
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145	PDF
FZK101 Abstract: FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001 Text: HANDBOOK OF INTESBATEI CIRCUITS in EQUIVALENTS AND SUBSTITUTES A lthough every care is taken with the preparation of this book, the publishers will not be responsible for any errors that might occur. I.S.B.N. 0 900162 35 X 1974 by Bernard B. Babani First Published 1974	OCR Scan	Grou19 CN127-128-638 ZN220-320. CN131-132-642. ZN221-321. CN133-134-644. ZN248-348. CN135-136-646 ZN222-322. CN121-122-682. FZK101 FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001	PDF
transistor c124 Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300 Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 transistor c124 TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300	PDF
7805CT Abstract: MOC5010 ip1717 UA741CN op amp TL081P LM3524N LM13080N 7824ct LM7915CK LM7905CK Text: Master Designer Version 8.5 Component Library Reference Volume 2 October 1995 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means-electronic, mechanical, photocopying, recording, or otherwise-without the prior	Original		PDF
TL139 Abstract: TL205 PTFB183404 ptfb183404f transistor TL131 Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications	Original	PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131	PDF

Untitled Abstract: No abstract text available Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.	Original	PTFB183408SV PTFB183408SV 340-watt	PDF
TL244 Abstract: CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134 Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	PTVA035002EV PTVA035002EV H-36275-4 TL244 CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134	PDF
Untitled Abstract: No abstract text available Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PTFB183408SV PTFB183408SV 340-watt	PDF
Untitled Abstract: No abstract text available Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz	Original	PTFB213004F PTFB213004F 300-watt H-37275-6/2	PDF
thyristor TAG 8506 Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y	OCR Scan	11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719	PDF
CA314DE Abstract: 74ls154n SN72710N uln 2008 SN75450BN 1826-0138 SN74ALS00N MC889P SN72710L 9374PC Text: INTEGRATED CIRCUIT CROSS REFERENCE 9 Integrated Circuits Replacement Part Cross Reference When selecting replacement parts for your HP products, you may notice that many manuals list only an HP part number for the part, even though it appears that this part is manufactured by one of the large semiconductor manufacturers. Service personnel often ask why only HP part numbers are	Original	UPD444CUPD5101L UPD8228D UPD8243C UPD8251D UPD8253D UPD8255 UT-309 VFC32KP WD8250A XC79L05C CA314DE 74ls154n SN72710N uln 2008 SN75450BN 1826-0138 SN74ALS00N MC889P SN72710L 9374PC	PDF
VdS 2093 2009 Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114 Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz	Original	PTFB213004F PTFB213004F 300-watt H-37275-6/2 VdS 2093 2009 TL2014 transistor c114 chip transistor c114 diagram TL243 TL145 tl1571 TL1621 transistor c114	PDF
220v AC voltage stabilizer schematic diagram Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122	Original	P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor	PDF
c5088 transistor Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154	Original	1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N	PDF
atc200b104kw50 Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147 Text: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PTFB183404F PTFB183404F 340-watt atc200b104kw50 TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147	PDF

TL170 Search Results

TL170 Price and Stock

Rochester Electronics LLC TL170CLP

Honeywell Sensing and Control 4TL1-70

Honeywell Sensing and Control 2TL1-70E

Honeywell Sensing and Control 12TL1-70

Honeywell Sensing and Control 4TL1-70N

TL170 Datasheets (7)

TL170 Datasheets Context Search

TL170C

TL170

tl170 hall effect

L298D

k2645

EATON CM20A

LM7805ACH-ND

TL272

103SR5A-1

TL139

FZK101

transistor c124

7805CT

TL139

Untitled

TL244

Untitled

Untitled

thyristor TAG 8506

CA314DE

VdS 2093 2009

220v AC voltage stabilizer schematic diagram

c5088 transistor

atc200b104kw50