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    PTFA181001GL Search Results

    PTFA181001GL Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFA181001GL Infineon Technologies 1800 MHz to 2000 MHz; Package: PG-63248; Flange Type: Earless; Matching: I/O; Frequency Band: 1,805.0 - 1,880.0 MHz; P1dB (typ): 100.0 W; Supply Voltage: 28.0 V Original PDF
    PTFA181001GL V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 100W PG-63248-2 Original PDF
    PTFA181001GLV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 100W PG-63248-2 Original PDF
    PTFA181001GL V1 R250 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 100W PG-63248-2 Original PDF
    PTFA181001GLV1R250 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 100W PG-63248-2 Original PDF

    PTFA181001GL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LM7805

    Abstract: elna 50v, 1uF LM7805 voltage regulator d 1879 TRANSISTOR BCP56 PTFA181001GL ELNA capacitor 100 uf 50v
    Text: Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the


    Original     		PDF PTFA181001GL PTFA181001HL PTFA181001GL 100-watt LM7805 elna 50v, 1uF LM7805 voltage regulator d 1879 TRANSISTOR BCP56 ELNA capacitor 100 uf 50v

    d683

    Abstract: elna 50v BCP56 LM7805 PTFA181001GL
    Text: PTFA181001GL Use GL only Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805 – 1880 MHz Description The PTFA181001GL is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz


    Original     		PDF PTFA181001GL PTFA181001GL 100-watt d683 elna 50v BCP56 LM7805

    Untitled

    Abstract: No abstract text available
    Text: PTFA181001GL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805 – 1880 MHz Description The PTFA181001GL is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz


    Original     		PDF PTFA181001GL PTFA181001GL 100-watt PG-63248-2 PTFA181001HL PG-64248-2