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    TPC8103 Price and Stock

    Toshiba America Electronic Components TPC8103(TE12L)

    TRANSISTOR, SILICON P CHANNEL MOS TYPE (U-MOSII)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TPC8103(TE12L) 1,950
    • 1 $2.35
    • 10 $2.35
    • 100 $2.35
    • 1000 $0.8225
    • 10000 $0.705
    		Buy Now

    Toshiba America Electronic Components TPC8103

    TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,11A I(D),SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TPC8103 1,754
    • 1 $1.65
    • 10 $1.65
    • 100 $1.65
    • 1000 $0.66
    • 10000 $0.5775
    		Buy Now

    Toshiba America Electronic Components TPC8103TE12L

    Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TPC8103TE12L 188
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    TPC8103 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPC8103 Toshiba Original PDF
    TPC8103 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPC8103 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    TPC8103 Toshiba Silicon P-channel MOS FET transistor Scan PDF
    TPC8103 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Scan PDF

    TPC8103 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TPC8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPC8103 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 9.5 mΩ (typ.)


    Original     		PDF TPC8103

    TPC8103

    Abstract: No abstract text available
    Text: TPC8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPC8103 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 9.5 mΩ (typ.)


    Original     		PDF TPC8103 TPC8103

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    REALTEK 1186

    Abstract: EM329 BA3948 WN0113 WN0103 bh7880 M78A WN0127 ICH4 rm65
    Text: B VB161AX A Ginger Main Board 01 C D Index System Block PAGE 4 Version History PAGE CONTENTS 21 Pullup for PCI / SMB Selector 41 CN Mini-PCI 02 Block Diagram 22 FWH / DEBUG CN / PCI REQ Cut off sw 42 CN MDC 03 R-C for EMI 23 S-Video 43 CN SD-SLOT 04 PLL 24


    Original     		PDF VB161AX IEEE1394 1/16W 2SC4617 2SC4617 2SK3019 REALTEK 1186 EM329 BA3948 WN0113 WN0103 bh7880 M78A WN0127 ICH4 rm65

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    RPACK4

    Abstract: 81C61 RPACK4-22 tb6808f CA0036 SMDC075 TC7WB126FK z3M 80s G5 A 01 144C R8551
    Text: A B C D E F G H J K L M N DATE EC NO. P _ OCT/02/01 VER 0.86 9 Q PART NO. 9 DEVELOPMENT NO. TORONTO-4.5 PLANAR VER 0.86 8 7 6 5 4 3 2 1 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31.


    Original     		PDF OCT/02/01 C9827) H8S/2169A PC87392 RPACK4 81C61 RPACK4-22 tb6808f CA0036 SMDC075 TC7WB126FK z3M 80s G5 A 01 144C R8551

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent

    2SK1603

    Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
    Text: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1


    Original     		PDF BCE0017A 2SK1603 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078

    TPC8103

    Abstract: TPCS8210 application tpc8010 AD* SOP-8 TPCS8201 TPCS8206 tpc8109 tpc8102 tpc8204 tpc8207
    Text: [ 7 ] Superseded and Discontinued Product List [ 7 ] Superseded and Discontinued Product List [ 7 ] Superseded and Discontinued Product List 1. Superseded Products The following listed products are no longer being promoted in Toshiba’s marketing. Please refer to Recommended Replacement Part Number.


    Original     		PDF TPC8001 TPC8010-H TPC8002 TPC8014 TPC8005-H TPC8109 TPC8201 TPC8209 TPC8202 TPC8208 TPC8103 TPCS8210 application tpc8010 AD* SOP-8 TPCS8201 TPCS8206 tpc8109 tpc8102 tpc8204 tpc8207

    2SK2056

    Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
    Text: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII


    Original     		PDF 2SJ147 O-220IS 2SJ183 2SJ200 2SJ201 2SJ224 O-220FL/SM 2SJ238 2SJ239 2SJ240 2SK2056 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402

    HQFP64

    Abstract: TPC8109 TPC8103 TPC8107 CUS01 TC51W3216XB TPC8106 TPC8108 TPCS8302 ram 8108
    Text: e y eeeyyyeee eeye 東芝半導体情報誌アイ 2001年8月号 次世代システムLSIのプロセス・設計技術をソニーと共同開発 当社とソニー株式会社は、0.10 m／0.07μm世代のシステムLSIにおける最先端プロセ


    Original     		PDF 07mLSI 7-3405FAX. TC51W3216XB SRAM045-890-2701 175mCMOS 2002XLSI HQFP64 TPC8109 TPC8103 TPC8107 CUS01 TC51W3216XB TPC8106 TPC8108 TPCS8302 ram 8108

    C8816

    Abstract: pj999 C8813 c8980 C8815 C8850 C8819 C8817 IC8900 D8822
    Text: Engineer INVENTEC Engr_Name Drawn by Drawer_Name R&D CHK FMNPS1-[CS] DOC CTRL CHK MFG ENGR CHK Changed by TSB1 Date Changed Thursday, January 10, 2002 Time Changed 3:00:37 pm QA CHK Size TITLE [PS] SPEC SHEET VER 000 Model Number Model_No Sheet 200 of A3 PVDC


    Original     		PDF G36010116202 Q8901 G36410121028 C8802 R8821 C8805 G36030029056 220nF G36030109109 G36010116103 C8816 pj999 C8813 c8980 C8815 C8850 C8819 C8817 IC8900 D8822

    tb6808f

    Abstract: bi 403n SMDC075 C10052 m5273 FC5851 ADP3203
    Text: A B C D E F G H J K L M N DATE 5 4 3 2 1 39. 40. 41. 42. 43. 44. 45. 46. 47. 48. 49. 50. 51. 52. 53. 54. 55. 56. 57. 58. 59. 60. 61. 62. 63. 64. 65. 66. 67. 68. 69. 70. 71. 72. 73. TITLE PAGE CPU 1/3 CPU(2/3) CPU(3/3) EMC GROUNDING VCCCPUCORE DECOUPLING MCH-M(1/4)


    Original     		PDF AD1881A 2SK3019 PST3616UR PST3610UR tb6808f bi 403n SMDC075 C10052 m5273 FC5851 ADP3203

    L9150

    Abstract: L9101 L9100 c9015 D9150 ic905 C9013 S3V 83 IC-9002 INVENTEC FMNSY2-VP
    Text: Engineer INVENTEC Engr_Name Drawn by Drawer_Name R&D CHK MFG ENGR CHK Changed by Date Changed Friday, February 22, 2002 Time Changed 3:26:25 pm QA CHK A3 FMNSY2-VP DOC CTRL CHK TSB1 Size TITLE BLOCK DIAGRAM VER 110 Model Number Model_No Sheet of P3V 1/16W


    Original     		PDF 1/16W 950805BGT G36010116158 G36010119012 G36010116097 GDM010000035 G36030029124 G36030011099 L9150 L9101 L9100 c9015 D9150 ic905 C9013 S3V 83 IC-9002 INVENTEC FMNSY2-VP

    venice 6.2

    Abstract: venice 6.5 c33726 73a 174 coil tb6808f CA0036 SMD-C10 ir 643p fet 123q SMDC050
    Text: A B C D E F G H J K L M N DATE EC NO. 07/06/01 9 P Q PART NO. _ VER 2.04A 9 DEVELOPMENT NO. VENICE-1 PLANAR VER 2.04A 8 7 6 5 4 3 2 1 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32.


    Original     		PDF SST49LF004A venice 6.2 venice 6.5 c33726 73a 174 coil tb6808f CA0036 SMD-C10 ir 643p fet 123q SMDC050

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII T P C 8 1 03 LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 RUHR" • Low Drain-Source ON Resistance : Rd S (ON)= 9.5mil (Typ.)


    OCR Scan     		PDF TPC8103

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-M OSII T P C 8 1 03 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : RßS (ON) = 9.5 mH (Typ.) High Forward Transfer Admittance: |Yfs| = 2 0 S (Typ.)


    OCR Scan     		PDF TPC8103

    TPC8103

    Abstract: No abstract text available
    Text: TO SH IBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-M OSII T P C 8 1 03 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : RßS (ON) = 9.5 mH (Typ.) High Forward Transfer Admittance: |Yfs| = 2 0 S (Typ.)


    OCR Scan     		PDF TPC8103 -10/uA TPC8103

    tpc8103

    Abstract: No abstract text available
    Text: TOSHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR LITHIUM ION BATTERY SILICON P CHANNEL MOS TYPE U-MOSII T P C 8 1 03 INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low Drain-Source ON Resistance : R ßS (ON)“ 9.5mO (Typ.) • High Forward Transfer Adm ittance: |Yfs| = 20S (Typ.)


    OCR Scan     		PDF TPC8103 tpc8103

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U -M O S II T P C 8 1 03 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES A N D TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : R]}g (ON) —9-5nin (Typ.) High Forward Transfer Adm ittance: |Yfs| = 20S (Typ.)


    OCR Scan     		PDF TPC8103

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U - M O SII T P C 8 1 03 LITHIUM ION BATTERY IN D U S T R IA L A P P L IC A T IO N S PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source O N Resistance : R ß S (O N ) = 9.5 m H (Typ.)


    OCR Scan     		PDF TPC8103