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IXYS Corporation IXTP3N60P MOSFET N-CH 600V 3A TO220AB
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DigiKey	IXTP3N60P	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
ComSIT USA	IXTP3N60P		400			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC HGTP3N60C3 6A, 600V, N-CHANNEL IGBT
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DigiKey	HGTP3N60C3	Bulk			579	1 - 10 - 100 - 1000 $0.52 10000 $0.52	Buy Now
onsemi HGTP3N60A4 IGBT 600V 17A 70W TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTP3N60A4	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC HGTP3N60A4 IGBT 600V 17A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTP3N60A4	Tube			216	1 - 10 - 100 - 1000 $1.39 10000 $1.39	Buy Now
Rochester Electronics LLC HGTP3N60B3 7A, 600V, UFS N-CHANNEL IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTP3N60B3	Bulk			579	1 - 10 - 100 - 1000 $0.52 10000 $0.52	Buy Now

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TP3N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MTP3N6 Abstract: No abstract text available Text: r r z S G S -T H O M S O N *7# » » E tL ie T O K f ! TP3N60 TP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S on M TP3N60 M TP3N60FI 600 V 600 V 2.5 ß 2.5 Q 3 A 2.5 A • HIGH VO LTAG E FOR OFF-LINE APPLICATIO NS	OCR Scan	PDF	MTP3N60 MTP3N60FI TP3N60 TP3N60FI 100KHz ATT22Q 500ms MTP3N6
Untitled Abstract: No abstract text available Text: * 5 SGS-THOMSON ilLiCTIKMDe 7 TP3N60 TP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V M TP3N60 M TP3N60FI • . . ■ ■ dss 600 V 600 V R DS on Id < 2.5 a < 2.5 a 3.9 A 2.5 A TYPICAL RDS(on) = 2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	OCR Scan	PDF	mTP3N60 MTP3N60FI TP3N60 TP3N60FI MTP3N60FI
TDA0161 equivalent Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:	OCR Scan	PDF
G3N60B Abstract: No abstract text available Text: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, TP3N60B3 HADDIQ 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, T c = 2 5 °C The H GTD3N60B3S, HG TD3N 60B3, HG T1S3N 60B3, HGT1S3N60B3S and TP3N60B3 are MOS gated high	OCR Scan	PDF	HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 GTD3N60B3S, HGT1S3N60B3S HGTP3N60B3 115ns 1-800-4-HARRIS G3N60B
3N60C3D Abstract: g3n60c3d 3n60c3 3n60c transistor TE 901 equivalent Zener Diode LT 432 S3N60C3 Text: HARRIS TP3N60C3D , HGT1S3N60C3D, HGT1S3N60C3DS S E M I C O N D U C T O R 6A , 6 0 0 V , U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t Di o d es Features Packaging JEDEC TO-22QAB • 6 A, 600V at Tc = 25 °C	OCR Scan	PDF	HGTP3N60C3D HGT1S3N60C3D, HGT1S3N60C3DS 130ns O-22QAB HGTP3N60C3D, HGT1S3N60C3DS -800-4-H 3N60C3D g3n60c3d 3n60c3 3n60c transistor TE 901 equivalent Zener Diode LT 432 S3N60C3
hg 3a 1004 Abstract: BT 139 F applications note Text: TP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS ¡H A R R IS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May1996 Packaging Features JEDEC TO -220AB • 6A, 600V at Tc = +25°C EMITTER • 600V Switching SOA Capability	OCR Scan	PDF	HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS -220AB ay1996 130ns HGT1S3N60C3DS 1-800-4-HARRIS hg 3a 1004 BT 139 F applications note
TP8N10 Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40 Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI	OCR Scan	PDF	2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
TP3N60 Abstract: p3n60 TP3N55 3n60 MOSFEt 3n60 transistor 3N55 mtp3n55 3N60 Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 3N60 M T P 3N 55 M T P 3N 60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TM O S POWER FETs 3 AMPERES rDS on = 2 5 OH M S 550 and 600 VOLTS These TM O S P ow er FETs are designed fo r high vo ltag e , high	OCR Scan	PDF	MTM/MTP3N60, MTP3N55 TP3N60 p3n60 TP3N55 3n60 MOSFEt 3n60 transistor 3N55 mtp3n55 3N60
MTM13N50E Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”	OCR Scan	PDF	BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
3N60A4D Abstract: TA49369 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 5LEC A9688 Text: HGT1S3N60A4DS, TP3N60A4D in t e r r i i J a n u a ry . D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the TP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	OCR Scan	PDF	HGT1S3N60A4DS HGTP3N60A4D TA49327. TA49369. 3N60A4D TA49369 HGT1S3N60A4DS9A 5LEC A9688
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by TP3N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3N 60E T M O S E -F E T ™ High Energy Pow er FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to	OCR Scan	PDF	MTP3N60E/D 21A-09
G3N60B3 Abstract: Transistor No C110 transistor C110 tr c110 HGT1S3N60B3S HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 LD26 Text: HGTD3N60B3S, HGT1S3N60B3S, TP3N60B3 interrii J a n u a ry . m D ata S h eet 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and TP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.	OCR Scan	PDF	HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 HGT1S3N60B3S HGTP3N60B3 G3N60B3 Transistor No C110 transistor C110 tr c110 HGTD3N60B3S HGTD3N60B3S9A LD26
mtp3n Abstract: TP3N60 A1412 Text: Si TYPE . TP3N60 TP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss TP3N60 TP3N60FI . . . . SGS-THOMSON ELiOT ö«S Id R üSion 600 V 600 V 2.5 2.5 ii il 3.9 A 2.5 A AVALANCHE RUG G EDN ESS TECHNO LO GY 100% AVALANCHE TESTED R EPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	PDF	MTP3N60 MTP3N60FI MTP3N60/FI mtp3n TP3N60 A1412