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    G3N60B3 Search Results

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    G3N60B3

    Abstract: HGT1S3N60B3S HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 RHRD460 2001 7a
    Contextual Info: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet December 2001 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 HGT1S3N60B3S 150oC. HGTP3N60B3 G3N60B3 HGTD3N60B3S HGTD3N60B3S9A RHRD460 2001 7a PDF

    G3N60B3D

    Abstract: mosfet 4414 HGT1S3N60B3DS HGT1S3N60B3DS9A HGTP3N60B3D RHRD460 TB334 7a600v
    Contextual Info: HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    Original     		HGTP3N60B3D, HGT1S3N60B3DS HGTP3N60B3D HGT1S3N60B3DS 150oC. RHRD460. TA49192. G3N60B3D mosfet 4414 HGT1S3N60B3DS9A RHRD460 TB334 7a600v PDF

    HGT1S3N60B3S

    Abstract: HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3
    Contextual Info: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.


    Original     		HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 HGT1S3N60B3S 150oC. HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 PDF

    G3N60B

    Contextual Info: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HADDIQ 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, T c = 2 5 °C The H GTD3N60B3S, HG TD3N 60B3, HG T1S3N 60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high


    OCR Scan     		HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 GTD3N60B3S, HGT1S3N60B3S HGTP3N60B3 115ns 1-800-4-HARRIS G3N60B PDF

    G3N60B3

    Abstract: G3N60B HGT1S3N60B3 HGT1S3N60B3S HGTD3N60B3 HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3
    Contextual Info: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 Semiconductor 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, TC = 25oC The HGTD3N60B3S, HGTD3N60B3, HGT1S3N60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high


    Original     		HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HGT1S3N60B3S HGTP3N60B3 G3N60B3 G3N60B HGT1S3N60B3 HGTD3N60B3 HGTD3N60B3S HGTD3N60B3S9A PDF

    HGT1S3N60B3DS

    Abstract: HGT1S3N60B3DS9A HGTP3N60B3D RHRD460 TB334
    Contextual Info: HGTP3N60B3D, HGT1S3N60B3DS Data Sheet December 2001 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTP3N60B3D, HGT1S3N60B3DS HGTP3N60B3D HGT1S3N60B3DS 150oC. RHRD460. TA49192. HGT1S3N60B3DS9A RHRD460 TB334 PDF

    G3N60B3

    Contextual Info: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HARRIS S E M I C O N D U C T O R 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, Tc = 2 5 °C The HGTD3N60B3S, H G TD3N 60B3, HGT1S3N60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high


    OCR Scan     		HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HGT1S3N60B3S HGTP3N60B3 1-800-4-HARRIS G3N60B3 PDF

    G3N60B3D

    Abstract: mosfet 4414 HGT1S3N60B3DS HGT1S3N60B3DS9A HGTP3N60B3D RHRD460 TB334
    Contextual Info: HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTP3N60B3D, HGT1S3N60B3DS HGTP3N60B3D HGT1S3N60B3DS 150oC. RHRD460. TA49192. G3N60B3D mosfet 4414 HGT1S3N60B3DS9A RHRD460 TB334 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    HGT1S3N60B3S

    Abstract: HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 RHRD460
    Contextual Info: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 HGT1S3N60B3S HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 RHRD460 PDF

    G3N60B3

    Abstract: Transistor No C110 transistor C110 tr c110 HGT1S3N60B3S HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 LD26
    Contextual Info: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 interrii J a n u a ry . m D ata S h eet 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.


    OCR Scan     		HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 HGT1S3N60B3S HGTP3N60B3 G3N60B3 Transistor No C110 transistor C110 tr c110 HGTD3N60B3S HGTD3N60B3S9A LD26 PDF

    G3N60B3

    Abstract: G3N60B HGTD3N60B3 TO-262AA equivalent
    Contextual Info: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 S E M I C O N D U C T O R 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, TC = 25oC The HGTD3N60B3S, HGTD3N60B3, HGT1S3N60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high


    Original     		HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HGT1S3N60B3S HGTP3N60B3 G3N60B3 G3N60B HGTD3N60B3 TO-262AA equivalent PDF