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Rochester Electronics LLC HGTP3N60A4D IGBT 600V 17A TO-220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTP3N60A4D	Tube			185	1 - 10 - 100 - 1000 $1.62 10000 $1.62	Buy Now
onsemi HGTP3N60A4D IGBT 600V 17A TO-220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTP3N60A4D	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	HGTP3N60A4D	Tube		111 Weeks	400	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC HGT1S3N60A4DS9A IGBT 600V 17A TO-263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGT1S3N60A4DS9A	Tube			176	1 - 10 - 100 - 1000 $1.71 10000 $1.71	Buy Now
onsemi HGT1S3N60A4DS9A IGBT 600V 17A TO-263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGT1S3N60A4DS9A	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Fairchild Semiconductor Corporation HGT1S3N60A4DS9A Insulated Gate Bipolar Transistor, 17A, 600V, N-Channel, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGT1S3N60A4DS9A		4,713		1	1 - 10 - 100 $1.56 1000 $1.39 10000 $1.31	Buy Now

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3N60A4D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
3N60A4D Abstract: 3n60a4 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D N-Channel mosfet 400v 25A Contextual Info: 3N60A4DS, 3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	Original	HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3N60A4D 3n60a4 HGT1S3N60A4DS9A N-Channel mosfet 400v 25A	PDF
3n60a4d Abstract: HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 3n60 Contextual Info: 3N60A4DS, 3N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	Original	HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3n60a4d HGT1S3N60A4DS9A 3n60	PDF
3N60A4D Abstract: TA49369 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 5LEC A9688 Contextual Info: 3N60A4DS, 3N60A4D in t e r r i i J a n u a ry . D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	OCR Scan	HGT1S3N60A4DS HGTP3N60A4D TA49327. TA49369. 3N60A4D TA49369 HGT1S3N60A4DS9A 5LEC A9688	PDF
3n60a4d Abstract: HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 3N60A4 Contextual Info: 3N60A4DS, 3N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	Original	HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3n60a4d HGT1S3N60A4DS9A 3N60A4	PDF
3N60A4 Contextual Info: 3N60A4DS, 3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	Original	HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3N60A4	PDF