2SK2056
Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
Text: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII
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2SJ147
O-220IS
2SJ183
2SJ200
2SJ201
2SJ224
O-220FL/SM
2SJ238
2SJ239
2SJ240
2SK2056
2SK1603
2SK1723
2sk1377
transistor 2SK1603
2SK2146
2SK2351
MOSFET 2sk1357
transistor 2sk1213
2SK2402
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K1120
Abstract: TRANSISTOR k1120 2SK1120 DATA 2SK1120
Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)
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2SK1120
K1120
TRANSISTOR k1120
2SK1120 DATA
2SK1120
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k1120
Abstract: TRANSISTOR k1120 2SK1120
Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)
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2SK1120
k1120
TRANSISTOR k1120
2SK1120
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TRANSISTOR k1120
Abstract: k1120 2SK1120 power device k1120
Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.0 S (typ.)
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2SK1120
TRANSISTOR k1120
k1120
2SK1120
power device k1120
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k1120
Abstract: TRANSISTOR k1120 TRANSISTOR k1120 Package Toshiba 2sk1120 2SK1120
Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Unit: mm
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2SK1120
k1120
TRANSISTOR k1120
TRANSISTOR k1120 Package
Toshiba 2sk1120
2SK1120
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TRANSISTOR k1120
Abstract: k1120
Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)
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2SK1120
2-16C1B
TRANSISTOR k1120
k1120
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TRANSISTOR k1120
Abstract: 2sk1120
Text: 2SK1120 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs|= 4.0 S (typ.) Low leakage current
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2SK1120
TRANSISTOR k1120
2sk1120
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k1120
Abstract: TRANSISTOR k1120 2SK1120 power device k1120 transistor 2SK1120 power transistor k1120 2SK1120 DATA
Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs|= 4.0 S (typ.) Low leakage current
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2SK1120
k1120
TRANSISTOR k1120
2SK1120
power device k1120
transistor 2SK1120
power transistor k1120
2SK1120 DATA
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2SK3566 equivalent
Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017E
S-167
BCE0017F
2SK3566 equivalent
2SK3562 equivalent
2SK3561 equivalent
2SK3878 equivalent
2SK3568 equivalent
2SK3911 equivalent
2SK941 equivalent
tpc8118 equivalent replacement
tpc8118
2SK3767 equivalent
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tpc8118 equivalent replacement
Abstract: SSM3J307T Zener diode smd 071 A01
Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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BCE0082A
tpc8118 equivalent replacement
SSM3J307T
Zener diode smd 071 A01
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017F
E-28831
BCE0017G
2SK3567 equivalent
2SK3569 equivalent
TPCA*8023
TK8A50D equivalent
2SK2056
2SK3878 equivalent
tpca8023
2SK941 equivalent
2SK3561 equivalent
2SK1603
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TPCA*8064
Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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BCE0082B
TPCA*8064
TK12A10K3
TPCA8077
2SK3567 equivalent
SSM3J328
TPCA8077-H
TJ11A10M3
TK50E06K3A
TPCA*8077
TPCA8028
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2SK1603
Abstract: 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855
Text: Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to the S-MOS product line. The devices which comprise this family exhibit ultra-low ON-resistance (RDS(ON) and
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3515C-0202
F-93561,
2SK1603
2SK2056
2SK1377
2SK1349
2sk2402
2SK1117
2SK1213
transistor 2SK1603
2SK423
2sk1855
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2SK1120
Abstract: No abstract text available
Text: TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII-5 2 S K 1 120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 4.0S (Typ.)
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2SK1120
-l-50
2SK1120
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2SK1120
Abstract: toshiba l40 SC-65
Text: TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 1 5.9 M A X. • Low Drain-Source ON Resistance
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2SK1120
2SK1120
toshiba l40
SC-65
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transistor 2SK1120
Abstract: No abstract text available
Text: TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII -5 IN D U S T R IA L A P P L IC A T IO N S U n it in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source O N Resistance
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2SK1120
transistor 2SK1120
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transistor 2SK1120
Abstract: CL226 2SK1120
Text: TOSHIBA 2SK1120 Field Effect Transistor Industrial Applications Unit in m m Silicon N Channel MOS Type rc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance
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2SK1120
--300nA
transistor 2SK1120
CL226
2SK1120
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2SK1120 DATA
Abstract: 2SK1120
Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2 S K 1 120 DATA SILICON N CHANNEL MOS TYPE 7T- M O S II • 5 (2SK1120) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.
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2SK1120
2SK1120)
2SK112Û
2SK1120 DATA
2SK1120
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Untitled
Abstract: No abstract text available
Text: 2SK1120 T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S II5 2 S K 1 120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm • Low Drain-Source ON Resistance
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2SK1120
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Untitled
Abstract: No abstract text available
Text: 2SK1120 TOSHIBA TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANN EL MOS TYPE tt- M O S I I -5 2 S K 1 120 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS : Rd S(ON) 1 5 .9 M A X -
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2SK1120
max300
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transistor 2SK1603
Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all
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OT-89,
T0-220
2SK1488
2SK1865SM
2SK1531
2SK1745
2SK2057
2SK1544
O-220AB
2SK1723
transistor 2SK1603
2SK1603
2SK1118
transistor 2sk1723
MOSFET 2SK1358 Transistor Guide
2sk16
packages TYPES FOR MOSFET
toshiba transistor smd code
2sk1358
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j2y transistor
Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,
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O220AB
O-126
j2y transistor
T15J10
MP4704
MG100M2CK1
2sb834
MP3103
MG50J6ES91
MP3002
mp4505
2sc497
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Untitled
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE nr-MOSn 2SK1120 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. SWITCHING POWER SUPPLY APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. A FEATURES: •Low Drain-Source ON Resistance : RDS(0N)=1.5ß (Typ.)
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2SK1120
20kfl
10raA,
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