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    TOSHIBA 2SK1120 Search Results

    TOSHIBA 2SK1120 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR3DG28
    		Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NA
    		Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TK2R4A08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQH
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    CUZ30V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA 2SK1120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK2056

    Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
    Contextual Info: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII


    Original     		2SJ147 O-220IS 2SJ183 2SJ200 2SJ201 2SJ224 O-220FL/SM 2SJ238 2SJ239 2SJ240 2SK2056 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402 PDF

    2SK1120

    Contextual Info: TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII-5 2 S K 1 120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 4.0S (Typ.)


    OCR Scan     		2SK1120 -l-50 2SK1120 PDF

    2SK1120

    Abstract: toshiba l40 SC-65
    Contextual Info: TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 1 5.9 M A X. • Low Drain-Source ON Resistance


    OCR Scan     		2SK1120 2SK1120 toshiba l40 SC-65 PDF

    transistor 2SK1120

    Contextual Info: TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII -5 IN D U S T R IA L A P P L IC A T IO N S U n it in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source O N Resistance


    OCR Scan     		2SK1120 transistor 2SK1120 PDF

    K1120

    Abstract: TRANSISTOR k1120 2SK1120 DATA 2SK1120
    Contextual Info: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		2SK1120 K1120 TRANSISTOR k1120 2SK1120 DATA 2SK1120 PDF

    k1120

    Abstract: TRANSISTOR k1120 2SK1120
    Contextual Info: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		2SK1120 k1120 TRANSISTOR k1120 2SK1120 PDF

    TRANSISTOR k1120

    Abstract: k1120 2SK1120 power device k1120
    Contextual Info: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		2SK1120 TRANSISTOR k1120 k1120 2SK1120 power device k1120 PDF

    k1120

    Abstract: TRANSISTOR k1120 TRANSISTOR k1120 Package Toshiba 2sk1120 2SK1120
    Contextual Info: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Unit: mm


    Original     		2SK1120 k1120 TRANSISTOR k1120 TRANSISTOR k1120 Package Toshiba 2sk1120 2SK1120 PDF

    TRANSISTOR k1120

    Abstract: k1120
    Contextual Info: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		2SK1120 2-16C1B TRANSISTOR k1120 k1120 PDF

    TRANSISTOR k1120

    Abstract: 2sk1120
    Contextual Info: 2SK1120 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs|= 4.0 S (typ.) Low leakage current


    Original     		2SK1120 TRANSISTOR k1120 2sk1120 PDF

    k1120

    Abstract: TRANSISTOR k1120 2SK1120 power device k1120 transistor 2SK1120 power transistor k1120 2SK1120 DATA
    Contextual Info: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs|= 4.0 S (typ.) Low leakage current


    Original     		2SK1120 k1120 TRANSISTOR k1120 2SK1120 power device k1120 transistor 2SK1120 power transistor k1120 2SK1120 DATA PDF

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent PDF

    transistor 2SK1120

    Abstract: CL226 2SK1120
    Contextual Info: TOSHIBA 2SK1120 Field Effect Transistor Industrial Applications Unit in m m Silicon N Channel MOS Type rc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		2SK1120 --300nA transistor 2SK1120 CL226 2SK1120 PDF

    2SK1120 DATA

    Abstract: 2SK1120
    Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2 S K 1 120 DATA SILICON N CHANNEL MOS TYPE 7T- M O S II • 5 (2SK1120) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.


    OCR Scan     		2SK1120 2SK1120) 2SK112Û 2SK1120 DATA 2SK1120 PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    Contextual Info: 2SK1120 T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S II5 2 S K 1 120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm • Low Drain-Source ON Resistance


    OCR Scan     		2SK1120 PDF

    Contextual Info: 2SK1120 TOSHIBA TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANN EL MOS TYPE tt- M O S I I -5 2 S K 1 120 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS : Rd S(ON) 1 5 .9 M A X -


    OCR Scan     		2SK1120 max300 PDF

    transistor 2SK1603

    Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
    Contextual Info: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all


    OCR Scan     		OT-89, T0-220 2SK1488 2SK1865SM 2SK1531 2SK1745 2SK2057 2SK1544 O-220AB 2SK1723 transistor 2SK1603 2SK1603 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358 PDF

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497 PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028 PDF

    2SK1603

    Abstract: 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855
    Contextual Info: Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to the S-MOS product line. The devices which comprise this family exhibit ultra-low ON-resistance (RDS(ON) and


    Original     		3515C-0202 F-93561, 2SK1603 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE nr-MOSn 2SK1120 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. SWITCHING POWER SUPPLY APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. A FEATURES: •Low Drain-Source ON Resistance : RDS(0N)=1.5ß (Typ.)


    OCR Scan     		2SK1120 20kfl 10raA, PDF