Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK16 Search Results

    2SK16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1628-E Renesas Electronics Corporation Silicon N Channel MOSFET, TO-3PL, /Tube Visit Renesas Electronics Corporation
    2SK1636L-E Renesas Electronics Corporation Switching N-Channel Power Mosfet, LDPAK(L), /Tube Visit Renesas Electronics Corporation
    2SK1671-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 30A 95Mohm To-3P Visit Renesas Electronics Corporation
    2SK1658-T1-A Renesas Electronics Corporation Power MOSFETs for Automotive, SSP, / Visit Renesas Electronics Corporation
    2SK1629-E Renesas Electronics Corporation Silicon N Channel MOSFET, TO-3PL, /Tube Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SK16 Price and Stock

    Rochester Electronics LLC 2SK1628-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1628-E Bulk 24
    • 1 -
    • 10 -
    • 100 $12.59
    • 1000 $12.59
    • 10000 $12.59
    Buy Now

    Rochester Electronics LLC 2SK1667-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1667-E Bulk 115
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.61
    • 10000 $2.61
    Buy Now

    Rochester Electronics LLC 2SK1626-E

    MOSFET N-CH 450V 5A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1626-E Bulk 151
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2
    • 10000 $2
    Buy Now

    Rochester Electronics LLC 2SK1691-E

    NCH 10V DRIVE SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1691-E Bulk 171
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.76
    • 10000 $1.76
    Buy Now

    Rochester Electronics LLC 2SK1637-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1637-E Bulk 121
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.5
    • 10000 $2.5
    Buy Now

    2SK16 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK16 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK16 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK160 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK160 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK160 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK160 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK160 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK160 Unknown FET Data Book Scan PDF
    2SK160 Toshiba TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,3A I(D),TO-220AB Scan PDF
    2SK1600 Toshiba Original PDF
    2SK1600 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1600 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1600 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1600 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1600 Unknown FET Data Book Scan PDF
    2SK1600 Toshiba TRANS MOSFET N-CH 800V 3A 3TO-220AB Scan PDF
    2SK1601 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1601 Toshiba Original PDF
    2SK1601 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1601 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    ...

    2SK16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1155

    Abstract: 2SK1156 2SK1626 2SK1627
    Text: 2SK1626, 2SK1627 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter 2


    Original
    PDF 2SK1626, 2SK1627 220FM 2SK1626 2SK1155 2SK1156 2SK1626 2SK1627

    2SK1620

    Abstract: 2SK740
    Text: 2SK1620 L , 2SK1620 S Silicon N-Channel MOS FET Application LDPAK High speed power switching Features 1 • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    Original
    PDF 2SK1620 2SK740. 2SK740

    2SK1337

    Abstract: 2SK1698 DSA003639
    Text: 2SK1698 Silicon N-Channel MOS FET ADE-208-1314 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source.


    Original
    PDF 2SK1698 ADE-208-1314 2SK1337 2SK1698 DSA003639

    Untitled

    Abstract: No abstract text available
    Text: 2SK1609 Switching Diodes MA1U152WK Silicon epitaxial planer type Unit : mm For switching circuits • Features 2.8±0.2 +0.25 0.65±0.15 0.65±0.15 ● Small capacity between pins, Ct ● Cathode common connection type +0.1 2 +0.1 Short reverse recovery period trr


    Original
    PDF 2SK1609 MA1U152WK

    MA776

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA776 Silicon epitaxial planer type Unit : mm For the switching circuit ø0.45 max. Low forward rise voltage VF and satisfactory wave detection effi- 1st Band 2nd Band ciency Temperature coefficient of forward characteristic is small.


    Original
    PDF 2SK1606 MA776 DO-34) MA776

    Untitled

    Abstract: No abstract text available
    Text: 2SK1613 Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS Unit : mm • Features 10.5±0.5 2.0±0.1 ■ Absolute Maximum Ratings Tc = 25˚C Symbol Rating VDSS 900 V Gate-Source voltage VGSS ±30 V DC ID ±5 A Pulse IDP ±10 A EAS * 45 mJ Avalanche energy capability


    Original
    PDF 2SK1613

    Untitled

    Abstract: No abstract text available
    Text: 2SK1607 Switching Diodes MA1U152A Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct +0.1 2 0.7–0 +0.1 ● 3 0.4–0.05 in the high-speed mounting machine


    Original
    PDF 2SK1607 MA1U152A

    Untitled

    Abstract: No abstract text available
    Text: 2SK1605 Power F-MOS FETs 2SK1605 Silicon N-Channel Power F-MOS Unit : mm avalanche energy capability ● High-speed 4.2±0.2 7.5±0.2 RDS on , high-speed switching characteristic • Applications ø3.1±0.1 switching (switching mode regulator) high-frequency power amplification


    Original
    PDF 2SK1605

    Untitled

    Abstract: No abstract text available
    Text: 2SK1609 Switching Diodes MA1U152WK Silicon epitaxial planer type Unit : mm For switching circuits • Features 2.8±0.2 +0.25 0.65±0.15 0.65±0.15 0.95 3 +0.1 in the high-speed mounting machine 1 0.4–0.05 Flat lead type, with improved mounting efficiency and solderability


    Original
    PDF 2SK1609 MA1U152WK

    Untitled

    Abstract: No abstract text available
    Text: 2SK1607 Switching Diodes MA204WK, MA205WK Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 ● Small capacity between pins, Ct ● Supply 0.65 max. 14.5±0.5 reverse recovery period trr 0.85 ● Short 1.0 0.8 • Features


    Original
    PDF 2SK1607 MA204WK, MA205WK MA204WK

    2SK1608

    Abstract: No abstract text available
    Text: 2SK1608 Power F-MOS FETs 2SK1608 Silicon N-Channel Power F-MOS Unit : mm • Applications ● High-speed ø3.1±0.1 switching switching mode regulator high-frequency power amplification 14.0±0.5 ● For 2.7±0.2 4.2±0.2 RDS(on), high-speed switching characteristic


    Original
    PDF 2SK1608 2SK1608

    K1637

    Abstract: K2422 K163 2SK1637 Hitachi DSA001652
    Text: 2SK1637, 2SK2422 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original
    PDF 2SK1637, 2SK2422 O-220FM 2SK1637 K1637 K2422 K163 2SK1637 Hitachi DSA001652

    2SK161

    Abstract: 2SK161GR vI652
    Text: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK161 U nit in mm FM TU N ER A P P LIC A T IO N S . VH F B A N D A M P LIF IE R A PP LIC A T IO N S . Low Noise Figure • • : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


    OCR Scan
    PDF 2SK161 100MHz) 2SK161 2SK161-0 2SK161-Y 2SK161-GR 2SK161GR vI652

    2SK1118

    Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
    Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531


    OCR Scan
    PDF 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS Unit in mm — NF = 2.5dB Typ. (f = 100MHz) Low Noise Figure • High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


    OCR Scan
    PDF 2SK161 100MHz) 55MAX

    Untitled

    Abstract: No abstract text available
    Text: 2SK1628, 2SK1629 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter


    OCR Scan
    PDF 2SK1628, 2SK1629 2SK1628

    Untitled

    Abstract: No abstract text available
    Text: 2SK1623 L , 2SK1623(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan
    PDF 2SK1623

    Untitled

    Abstract: No abstract text available
    Text: 2SK1659-L.S SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features ^ ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage ■ Applications • S w itch in g regulators


    OCR Scan
    PDF 2SK1659-L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1600 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 600 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • U n it in mm Low Drain-Source ON Resistance : Rd S(ON) =4.30 (Typ.)


    OCR Scan
    PDF 2SK1600

    K1643

    Abstract: 2SK1643
    Text: TOSHIBA 2SK1643 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 643 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. U n it in mm • Low Drain-Source ON Resistance


    OCR Scan
    PDF 2SK1643 K1643 2SK1643

    Untitled

    Abstract: No abstract text available
    Text: 2SK1698 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — can be driven from 5 V source. • Suitable for DC - DC converter, motor drive, power switch, solenoid drive


    OCR Scan
    PDF 2SK1698

    Untitled

    Abstract: No abstract text available
    Text: 2SK1625 L , 2SK1625(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter


    OCR Scan
    PDF 2SK1625 D-85622

    2SK1657

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 M O S FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS U n it: mm


    OCR Scan
    PDF 2SK1657 2SK1657

    2SK1648S

    Abstract: 2sk16 2SK97
    Text: 2SK1648 L , 2SK1648(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive. DC-DC converter, power switch and solenoid drive


    OCR Scan
    PDF 2SK1648 2SK1648S 2sk16 2SK97