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Fuji Electric Co Ltd 2SK3586-01 Mosfet, N, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:73A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:270W Rohs Compliant: Yes \|FUJI ELECTRIC 2SK3586-01
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2SK358 Datasheets (34)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK358	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK358	Toshiba		Original	PDF
2SK358	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK358	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK358	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK358	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SK358	Unknown	FET Data Book	Scan	PDF
2SK3580-01MR	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3580-01MR	Fuji Electric	Power Amplifier, 100V 50A 35W, MOS-FET N-Channel enhanced	Original	PDF
2SK358/1	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK3581-01L	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3581-01S	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3581-01SJ	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK358/2	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

2SK3582MFV	Toshiba	2SK3582MFV - Junction FETs(Single)	Original	PDF
2SK3582TK	Toshiba	Field Effect Transistor Silicon N Channel Junction Type For ECM	Original	PDF
2SK3582TV	Toshiba	Silicon N Channel Junction Type For ECM	Original	PDF
2SK3583	Panasonic	FETs, IPD, IGBTs, GaAs MMICs	Original	PDF
2SK358/3	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK3584	Panasonic	FETs, IPD, IGBTs, GaAs MMICs	Original	PDF

2SK358 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK1118 Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531	OCR Scan	2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220	PDF
C-123 Abstract: 2SK3589-01 n-channel, 75v, 50a Text: 2SK3589-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series OUT VIEW Outline Drawings mm 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照	Original	2SK3589-01 C-123 2SK3589-01 n-channel, 75v, 50a	PDF
max 1786 Abstract: Mosfet 100V 50A 2SK3587-01MR n-channel, 75v, 50a Text: 2SK3587-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)	Original	2SK3587-01MR O-220F max 1786 Mosfet 100V 50A 2SK3587-01MR n-channel, 75v, 50a	PDF
2SK3580-01MR Abstract: No abstract text available Text: 2SK3580-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply	Original	2SK3580-01MR O-220F 2SK3580-01MR	PDF
2SK3582TV Abstract: No abstract text available Text: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range	Original	2SK3582TV 2SK3582TV	PDF
2SK3582TK Abstract: 2SK3582 Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Application for Ultra-compact ECM Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C	Original	2SK3582TK 2SK3582TK 2SK3582	PDF
2SK3582TV Abstract: No abstract text available Text: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm Application for Ultra-compact ECM Lead Pb -free 1.2±0.05 Rating 0.4 0.3±0.05 3 Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25°C)	Original	2SK3582TV 2SK3582TV	PDF
2SK3582TK Abstract: ecm circuit Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel JUNCTION Type 2SK3582TK For ECM 0.22±0.05 Rating Unit VGDS -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature Storage temperature range	Original	2SK3582TK 2SK3582TK ecm circuit	PDF
T16M Abstract: No abstract text available Text: 2SK3589-01 FUJI POWER MOSFET200303 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Foot Print Pattern	Original	2SK3589-01 MOSFET200303 T16M	PDF
2SK3587 Abstract: 2sk3587-01mr Text: 2SK3587-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators	Original	2SK3587-01MR O-220F 2SK3587 2sk3587-01mr	PDF
2SK3585 Abstract: 2SK358 Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3585G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  High mutual conductance gm	Original	2002/95/EC) 2SK3585G 2SK3585 2SK358	PDF
Untitled Abstract: No abstract text available Text: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 • VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C	Original	2SK3582MFV	PDF
2SK3582TK Abstract: maximum idss transistor 290A transistor transistor marking CG Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature Tj 125 °C Tstg −55~125 °C Storage temperature range	Original	2SK3582TK 2SK3582TK maximum idss transistor 290A transistor transistor marking CG	PDF
Switching N-Channel Power MOS FET 50a Abstract: 2SK3588-01L 100V 100A mos fet n-channel, 75v, 50a 48v 50a power supply Text: 2SK3588-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply	Original	2SK3588-01L Switching N-Channel Power MOS FET 50a 100V 100A mos fet n-channel, 75v, 50a 48v 50a power supply	PDF

Untitled Abstract: No abstract text available Text: 2SK3586-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)	Original	2SK3586-01 O-220AB	PDF
Mosfet 100V 50A Abstract: 48v 50a power supply n-channel, 75v, 50a 2SK3586-01 Text: 2SK3586-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)	Original	2SK3586-01 O-220AB Mosfet 100V 50A 48v 50a power supply n-channel, 75v, 50a 2SK3586-01	PDF
2SK3582CT Abstract: 2SK3582 Text: 2SK3582CT 東芝ジャンクション FET シリコンNチャネル接合形 2SK3582CT エレクトレットコンデンサマイクロフォン用・1.0x0.6×0.38 mmt の CSP パッケージのため小型マイクロフォンに最適・減電圧特性に優れる	Original	2SK3582CT 100Hz, 100mV 2SK3582CT 2SK3582	PDF
2SK3582MFV Abstract: 2SK3582 Text: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C	Original	2SK3582MFV 2SK3582MFV 2SK3582	PDF
2SK3582TK Abstract: No abstract text available Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Application for Ultra-compact ECM Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature	Original	2SK3582TK 2SK3582TK	PDF
Untitled Abstract: No abstract text available Text: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C	Original	2SK3582MFV	PDF
2SK3582 Abstract: No abstract text available Text: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 0.2±0.05 0.8±0.05 0.3±0.05 • -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj	Original	2SK3582TV 2SK3582	PDF
2SK3582MFV Abstract: No abstract text available Text: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C	Original	2SK3582MFV 100mV 2SK3582MFV	PDF
2sk3585 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3585G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  High mutual conductance gm	Original	2002/95/EC) 2SK3585G 2sk3585	PDF
Untitled Abstract: No abstract text available Text: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range 0.4 0.4 2 0.3±0.05 3 Unit Gate Current	Original	2SK3582TV	PDF

2SK358 Search Results

2SK358 Price and Stock

Fuji Electric Co Ltd 2SK3586-01

2SK358 Datasheets (34)

2SK358 Datasheets Context Search

2SK1118

C-123

max 1786

2SK3580-01MR

2SK3582TV

2SK3582TK

2SK3582TV

2SK3582TK

T16M

2SK3587

2SK3585

Untitled

2SK3582TK

Switching N-Channel Power MOS FET 50a

Untitled

Mosfet 100V 50A

2SK3582CT

2SK3582MFV

2SK3582TK

Untitled

2SK3582

2SK3582MFV

2sk3585

Untitled