TK6A Search Results

TK6A Price and Stock

Filter by Manufacturer


Toshiba America Electronic Components TK6A60W,S4VX MOSFET N-CH 600V 6.2A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK6A60W,S4VX	Tube	58		1	1 $2.22 10 $2.22 100 $1.4014 1000 $0.95409 10000 $0.91	Buy Now
Mouser Electronics	TK6A60W,S4VX		110			1 $2.09 10 $2.02 100 $1.43 1000 $0.91 10000 $0.91	Buy Now
Verical	TK6A60W,S4VX		30		7	1 - 10 $0.8368 100 $0.8368 1000 $0.8368 10000 $0.8368	Buy Now
Arrow Electronics	TK6A60W,S4VX		30		1	1 - 10 - 100 $0.8368 1000 $0.8368 10000 $0.8368	Buy Now
Toshiba America Electronic Components TK6A65W,S5X MOSFET N-CH 650V 5.8A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK6A65W,S5X	Tube	50		1	1 $1.81 10 $1.81 100 $0.7906 1000 $0.62375 10000 $0.62375	Buy Now
Mouser Electronics	TK6A65W,S5X					1 $1.81 10 $1.81 100 $0.791 1000 $0.66 10000 $0.657	Get Quote
Toshiba America Electronic Components TK6A80E,S4X MOSFET N-CH 800V 6A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK6A80E,S4X	Tube	28		1	1 $2.65 10 $2.65 100 $1.372 1000 $0.9956 10000 $0.95	Buy Now
Mouser Electronics	TK6A80E,S4X		240			1 $2.63 10 $2.48 100 $1.49 1000 $0.95 10000 $0.95	Buy Now
Vyrian	TK6A80E,S4X		30			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TK6A45DA(STA4,Q,M) MOSFET N-CH 450V 5.5A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK6A45DA(STA4,Q,M)	Tube	21		1	1 $1.74 10 $1.74 100 $0.7435 1000 $0.53751 10000 $0.4525	Buy Now
Mouser Electronics	TK6A45DA(STA4,Q,M)					1 $1.64 10 $1.58 100 $0.744 1000 $0.496 10000 $0.496	Get Quote
Toshiba America Electronic Components TK6A50D(STA4,Q,M) MOSFET N-CH 500V 6A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK6A50D(STA4,Q,M)	Tube	20		1	1 $1.86 10 $1.86 100 $0.7981 1000 $0.57937 10000 $0.495	Buy Now
Mouser Electronics	TK6A50D(STA4,Q,M)					1 $1.8 10 $1.8 100 $0.799 1000 $0.535 10000 $0.535	Get Quote
TME	TK6A50D(STA4,Q,M)				1	1 $0.718 10 $0.513 100 $0.462 1000 $0.462 10000 $0.462	Get Quote
EBV Elektronik	TK6A50D(STA4,Q,M)			19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more TK6A price and stock on Findchips.com

TK6A Datasheets (24)

Part	Manufacturer	Description	Datasheet Type	PDF
TK6A	Topstek	Topstek Current Transducer	Original	PDF
TK6A45DA	Toshiba	Japanese - Transistors - Mosfets	Original	PDF
TK6A45DA	Toshiba	Transistors - Mosfets	Original	PDF
TK6A45DA(STA4,Q,M)	Toshiba	TK6A45DA - Trans MOSFET N-CH 450V 5.5A 3-Pin(3+Tab) TO-220SIS	Original	PDF
TK6A50D	Toshiba	Japanese - Transistors - Mosfets	Original	PDF
TK6A50D	Toshiba	Transistors - Mosfets	Original	PDF
TK6A50D(STA4,Q,M)	Toshiba	TK6A50D - Trans MOSFET N-CH 500V 6A 3-Pin(3+Tab) TO-220SIS	Original	PDF
TK6A53D	Toshiba	Transistors - Mosfets	Original	PDF
TK6A53D	Toshiba	Japanese - Transistors - Mosfets	Original	PDF
TK6A53D(STA4,Q,M)	Toshiba	TK6A53D - Trans MOSFET N-CH 525V 6A 3-Pin(3+Tab) TO-220SIS	Original	PDF
TK6A55DA(STA4,Q,M)	Toshiba	TK6A55DA - Trans MOSFET N-CH 550V 5.5A 3-Pin(3+Tab) TO-220SIS	Original	PDF
TK6A60D	Toshiba	Transistors - Mosfets	Original	PDF
TK6A60D	Toshiba	Japanese - Transistors - Mosfets	Original	PDF
TK6A60D(Q)	Toshiba	TK6A60D - Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220SIS	Original	PDF

TK6A60D(Q,M)	Toshiba	TK6A60D - Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220SIS	Original	PDF
TK6A60D(STA4,Q,M)	Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 6A TO220SIS	Original	PDF
TK6A60W	Toshiba	TK6A60W - Nch 500V	Original	PDF
TK6A60W,S4VX	Toshiba	TK6A60 - Power MOSFET - Nch 500V VDSS 700V	Original	PDF
TK6A65D	Toshiba	Japanese - Transistors - Mosfets	Original	PDF
TK6A65D	Toshiba	Transistors - Mosfets	Original	PDF

TK6A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K6A53D Abstract: TK6A53D Contextual Info: TK6A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK6A53D ○ スイッチングレギュレータ用 : Vth = 2.4～4.4 V (VDS = 10 V, ID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 2.54 記号定格単位ドレイン・ソース間電圧	Original	TK6A53D K6A53D TK6A53D	PDF
K6A65D Abstract: TK6A65D k6a65 TK6A Contextual Info: TK6A65D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ TK6A65D 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.95 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 4.0 S (標準)	Original	TK6A65D SC-67 2-10U1B K6A65D TK6A65D k6a65 TK6A	PDF
K6A60D Abstract: K6A60 TK6A60D Contextual Info: TK6A60D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ TK6A60D ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 1.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 3.0 S (標準)	Original	TK6A60D K6A60D K6A60 TK6A60D	PDF
K6A65D Abstract: tk6a65d tk6a65d equivalent k6a65 K6A65D data TK6A K6A6 Contextual Info: TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ =4.0 S (typ.)	Original	TK6A65D K6A65D tk6a65d tk6a65d equivalent k6a65 K6A65D data TK6A K6A6	PDF
k6a60d Contextual Info: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)	Original	TK6A60D k6a60d	PDF
Contextual Info: TK6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.25 (typ.) High forward transfer admittance: \|Yfs\| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	TK6A55DA	PDF
K6A50D Abstract: K*A50D TK6A50D Contextual Info: TK6A50D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ TK6A50D スイッチングレギュレータ用単位: mm : IDSS = 10 A (最大) 漏れ電流が低い。 A 3.9 3.0 : \|Yfs\| = 2.5 S (標準) 順方向伝達アドミタンスが高い。	Original	TK6A50D K6A50D K*A50D TK6A50D	PDF
K6A53D Abstract: TK6A53D Contextual Info: TK6A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK6A53D ○ スイッチングレギュレータ用 : Vth = 2.4～4.4 V (VDS = 10 V, ID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 2.54 記号定格単位ドレイン・ソース間電圧	Original	TK6A53D K6A53D TK6A53D	PDF
K6A65D Abstract: tk6a65d k6a65 Contextual Info: TK6A65D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ TK6A65D 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.95 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 4.0 S (標準)	Original	TK6A65D SC-67 2-10U1B K6A65D tk6a65d k6a65	PDF
K6A65D Abstract: k6a65 Contextual Info: TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK6A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)	Original	TK6A65D 28mitation, K6A65D k6a65	PDF
Contextual Info: TK6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)	Original	TK6A53D	PDF
Contextual Info: TK6A80E MOSFETs Silicon N-Channel MOS π-MOS TK6A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.6 mA)	Original	TK6A80E O-220SIS	PDF
K6A55DA Abstract: TK6A55DA Contextual Info: TK6A55DA 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK6A55DA ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 3.2 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 550 V)	Original	TK6A55DA K6A55DA TK6A55DA	PDF
K6A53D Abstract: TK6A53D Contextual Info: TK6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)	Original	TK6A53D K6A53D TK6A53D	PDF

K6A60D Contextual Info: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.0 S (typ.)	Original	TK6A60D K6A60D	PDF
K6A55DA Contextual Info: TK6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.25 Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	TK6A55DA K6A55DA	PDF
k6a60d Abstract: TK6A60D K6A60 Contextual Info: TK6A60D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ TK6A60D ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 1.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 3.0 S (標準)	Original	TK6A60D SC-67 2-10U1B 20070701-JA k6a60d TK6A60D K6A60	PDF
K6A50D Abstract: TK6A50D Contextual Info: TK6A50D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ TK6A50D スイッチングレギュレータ用単位: mm : RDS (ON) = 1.2 Ω (標準) : IDSS = 10 A (最大) 漏れ電流が低い。 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2	Original	TK6A50D K6A50D TK6A50D	PDF
K6A60D Abstract: K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2 Contextual Info: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.0 S (typ.)	Original	TK6A60D K6A60D K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2	PDF
TK6A50D Abstract: k6a50d K6A5 TK6A K6a50 Contextual Info: TK6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A50D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK6A50D TK6A50D k6a50d K6A5 TK6A K6a50	PDF
Contextual Info: TK6A45DA MOSFETs Silicon N-Channel MOS π-MOS TK6A45DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.1 Ω (typ.) (2) High forward transfer admittance: \|Yfs\| = 3.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V)	Original	TK6A45DA O-220SIS	PDF
K6A53D Abstract: K6A5 TK6A53D Contextual Info: TK6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)	Original	TK6A53D K6A53D K6A5 TK6A53D	PDF
K6A50D Abstract: TK6A TK6A50D K*A50D Contextual Info: TK6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A50D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK6A50D K6A50D TK6A TK6A50D K*A50D	PDF
K6A55DA Abstract: VDD200 TK6A55DA Contextual Info: TK6A55DA 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK6A55DA ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 3.2 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 550 V)	Original	TK6A55DA K6A55DA VDD200 TK6A55DA	PDF

TK6A Search Results

TK6A Price and Stock

Toshiba America Electronic Components TK6A60W,S4VX

Toshiba America Electronic Components TK6A65W,S5X

Toshiba America Electronic Components TK6A80E,S4X

Toshiba America Electronic Components TK6A45DA(STA4,Q,M)

Toshiba America Electronic Components TK6A50D(STA4,Q,M)

TK6A Datasheets (24)

TK6A Datasheets Context Search

K6A53D

K6A65D

K6A60D

K6A65D

k6a60d

K6A50D

K6A53D

K6A65D

K6A65D

K6A55DA

K6A53D

K6A60D

K6A55DA

k6a60d

K6A50D

K6A60D

TK6A50D

K6A53D

K6A50D

K6A55DA