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Toshiba America Electronic Components TK6A53D(STA4,Q,M) MOSFET N-CH 525V 6A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK6A53D(STA4,Q,M)	Tube			1	1 $1.98 10 $1.98 100 $0.8549 1000 $0.62319 10000 $0.54	Buy Now
Mouser Electronics	TK6A53D(STA4,Q,M)					1 $1.98 10 $1.98 100 $0.855 1000 $0.576 10000 $0.576	Get Quote
Toshiba America Electronic Components TK6A53D(STA4 Trans MOSFET N-CH 525V 6A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK6A53D(STA4,Q,M))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK6A53D(STA4	Tube		32 Weeks	50	1 - 10 - 100 $0.50544 1000 $0.47952 10000 $0.47952	Buy Now

K6A53D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K6A53D Abstract: TK6A53D Contextual Info: K6A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K6A53D ○ スイッチングレギュレータ用 : Vth = 2.4～4.4 V (VDS = 10 V, ID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 2.54 記号定格単位ドレイン・ソース間電圧	Original	TK6A53D K6A53D TK6A53D	PDF
K6A53D Abstract: TK6A53D Contextual Info: K6A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K6A53D ○ スイッチングレギュレータ用 : Vth = 2.4～4.4 V (VDS = 10 V, ID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 2.54 記号定格単位ドレイン・ソース間電圧	Original	TK6A53D K6A53D TK6A53D	PDF
Contextual Info: K6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)	Original	TK6A53D	PDF
K6A53D Abstract: TK6A53D Contextual Info: K6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)	Original	TK6A53D K6A53D TK6A53D	PDF
K6A53D Abstract: K6A5 TK6A53D Contextual Info: K6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)	Original	TK6A53D K6A53D K6A5 TK6A53D	PDF
Contextual Info: K6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)	Original	TK6A53D	PDF