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Toshiba America Electronic Components TK6A55DA(STA4,Q,M) MOSFET N-CH 550V 5.5A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK6A55DA(STA4,Q,M)	Tube			1	1 $1.97 10 $1.97 100 $1.97 1000 $0.62077 10000 $0.5375	Buy Now
Mouser Electronics	TK6A55DA(STA4,Q,M)					1 $1.76 10 $1.65 100 $0.772 1000 $0.554 10000 $0.537	Get Quote
Toshiba America Electronic Components TK6A55DA(STA4 Trans MOSFET N-CH 550V 5.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK6A55DA(STA4,Q,M))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK6A55DA(STA4	Tube		32 Weeks	50	1 - 10 - 100 $0.6407 1000 $0.5805 10000 $0.5805	Buy Now

K6A55DA Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: K6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.25 (typ.) High forward transfer admittance: \|Yfs\| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	PDF	TK6A55DA
K6A55DA Abstract: TK6A55DA Text: K6A55DA 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K6A55DA ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 3.2 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 550 V)	Original	PDF	TK6A55DA K6A55DA TK6A55DA
K6A55DA Abstract: No abstract text available Text: K6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.25 Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	PDF	TK6A55DA K6A55DA
K6A55DA Abstract: VDD200 TK6A55DA Text: K6A55DA 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K6A55DA ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 3.2 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 550 V)	Original	PDF	TK6A55DA K6A55DA VDD200 TK6A55DA
K6A55DA Abstract: TK6A55DA TK6A Text: K6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.25 Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	PDF	TK6A55DA K6A55DA TK6A55DA TK6A
K6A55DA Abstract: TK6A55DA K6A5 TK6A Text: K6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.26 Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	PDF	TK6A55DA K6A55DA TK6A55DA K6A5 TK6A