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Abstract: circuit diagram for lg tv LG tv circuit diagram LG tv block diagram
Text: LG Semicon. Co., LTD. Pin Configuration Description The GMOXOQ is a high speed low powr Xbit 3 c h a n n e l C M O S D,A c o n v e r t e r c o m b i n e d \vith a high stability voltage reference fabricated on a single monolithic chip. IJsing high accuracy current cell. the
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GMO250Q
GM0250Q
22OOpF)
apml
circuit diagram for lg tv
LG tv circuit diagram
LG tv block diagram
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Untitled
Abstract: No abstract text available
Text: Raytheon E le c tr o n ic s Semiconductor Division TM C 22290 M u ltistan d ard D igital V id e o En cod e r Features • All-digital video encoding • Internal digital subcarrier synthesizer • 8-bit parallel CCIR-601/CCIR-656/ANSI/SM PTE 125M input iormat
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CCIR-601/CCIR-656/ANSI/SM
CCIR-624/SM
PTE-170M
C2063P7C
c173LiG
TMC22290
TMC22290R2C
44-Lead
22290R2C
0D104Ã
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Untitled
Abstract: No abstract text available
Text: 2.85 TO 10 VOLT FIXED POSITIVE LOCAL VOLTAGE REGULATOR ZR78L SERIES ISSUE 1 - DECEMBER 1995 DEVICE DESCRIPTION FEATURES The ZR78L Series three term inal fixed positive voltage regulators feature internal circu it current lim it and therm al shutdown making
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ZR78L
ZR78L
ZR78L*
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Untitled
Abstract: No abstract text available
Text: All components used in this connector conform to RoHS standards. R e v is io n s Tolerances 1- 20= + / - 0.2 D a te M .H . 0 4 /1 5 /9 9 0 4 /1 4 /9 9 M .H . 20-30=+/-0.3 30-40=+/-0.4 D ra w n 40-50=+/-0.5 NO TE S plating thickness 5. P e r M IL-P-19468 9. Nickel pi. 100 m in. over
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IL-P-19468
ZZ-R-765
QQ-B-626
Q-P-35
Q-S-764
-C-530
Q-B-750
TI-7BSM11N
BNC/7BSM11-179
7BSM11-179
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Untitled
Abstract: No abstract text available
Text: All components used in this connector conform to RoHS standards. Tolerances 1- 20= + / - 0.2 A p p ro v e d D a te M .H . C hecked D a te M .H . 20-30=+/-0.3 30-40=+/-0.4 D ra w n 40-50=+/-0.5 NOTES plating thickness 5. Per MIL-P-19468 9. Nickel pi. 100 min. over
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MIL-P-19468
ZZ-R-765
QQ-B-626
PerWW-T-799
QQ-P-35
QQ-S-764
QQ-C-530
QQ-B-750
TI-7BSF11NT-179
7BSF11NT-179
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Untitled
Abstract: No abstract text available
Text: "P -¿U crO lì— 17 FUJITSU MICROELECTRONICS 47E D • 3 7 4 cJ7b2 Ü 0 n 7 5 2 4 ■ November 1990 Edition 2 .0 " DATA S H E E T - MB81C1501 1 M B I T 3 PO R T CMOS DYNAMIC FIELD M EM OR Y 1,175,040 Bit 3 Port CMOS Dynamic Field Memory The Fujitsu MB81C1501 is a 293,760-word x 4 bit 960 pixels x 306 lines field memoty.
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MB81C1501
MB81C1501
760-word
37417b2
38-LEAD
FPT-38P-M
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B84311
Abstract: No abstract text available
Text: F U J I TS U M I C R O E L E C T R O N I C S 47E » 374T7Li2 D O nD Hf i 7 • F M I October 1989 Edition 1.0 : DATA SHEET FUJITSU '= MB8431/32-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL-PORT SRAM 2K x 8 Bits CMOS Dual-Port Static Random Access Memory The Fujitsu M88431 and MB8432 are 2,048 words x 8 bits dual-port static high
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374T7Li2
MB8431/32-90/-90U-90LU-12/-12U-12LL
16K-BIT
M88431
MB8432
MB8431
MB8432provide
T-46-23-12
MB8431/32-90/-90L/-90LL
MB8431/32-12/-12L/-12LL
B84311
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Untitled
Abstract: No abstract text available
Text: R e visio n s D e scri ptio n /A p p ro v e d /D a te Tolerances A p p ro v e d D ate M .H . 1 1 /0 6 /9 6 1- 20= + / - 0.2 1 1 /0 6 /9 6 M .H . 20-30=+/-0.3 30-40=+/-0.4 D ra w n 40-50=+/-0.5 NOTES plating thickness 5. Per MIL-P-19468 9. Nickel pi. 100 min. over
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MIL-P-19468
ZZ-R-765
QQ-B-626
PerWW-T-799
QQ-P-35
QQ-S-764
QQ-C-530
QQ-B-750
TI-7BSF13RNT-59
7BSF13RNT-59
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE jU P D 7 5 2 3 8 4 BIT SINGLE-CHIP MICROCOMPUTER The /¿PD75238 is a single-chip microcom puter which contains a CPU capable of 1-, 4-, and 8-bit data processing, ROM, RAM, and I/O ports. In addition, it contains a fluorescent display tube FIP controller/
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PD75238
14-bit
/zPD75217,
/PD75238
IE-75000-R
IE-75001-R
RS-232-C
PC-9800
MS5A13IE75X
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and
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MSM56
V16160
288-Word
16-Bit
MSM56V16160
cycles/64
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Fujitsu MB86900
Abstract: MB86901 MB86900 CV 203 Ox00000010 A31A
Text: FUJITSU MICROELECTRONICS 47E D • 3 7 M cì7bB 0017Sbô 1 «FflI 7=-^-/7-38 « MB86930 PRELIMINARY FUJITSU SPARCIite 32-BIT RISC EMBEDDED PROCESSOR ADVANCE INFORMATION FEATURES 40 MHz 25ns/cycle operating frequency SPARC* high performance RISC architecture
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0017Sbô
MB86930
32-BIT
25ns/cycle)
MB86930-40CR-G
Fujitsu MB86900
MB86901
MB86900
CV 203
Ox00000010
A31A
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meab
Abstract: 0B13 DB10 IDT72605 IDT72615
Text: INTEGRATED DEVICE 47E D B 4SSS771 OOCHbTM S B I D T PARALLEL SyncBiFlFO CLOCKED BIDIRECTIONAL FIFO 256 X 18-BIT AND 512 x 18-BIT _ - FEATURES: • « • • • • • • • • • PRELIMINARY IDT72605 IDT72615 Two independent FIFO memories for fully bidirectional
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5S771
18-BIT
18-BIT
IDT72605
IDT72615
256x18
meab
0B13
DB10
IDT72615
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Untitled
Abstract: No abstract text available
Text: International IO R Rectifier Data Sheet No. PD-6.035F IR2152 SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Undervoltage lockout
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IR2152
A/210
IR2152
5M-1982
M0-047AC.
554S2
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