TI NPN MEDIUM POWER TRANSISTOR Search Results

MJE521

Abstract: MJE3521 511-MJE521 je521 MJE521K MJE371K mje521 npn MJES21 MJE3371 MJE371
Contextual Info: MJE521 S I L I C O N MJE521K MJE3521 PLASTIC MEDIUM-POWER NPN SILICON TRANSISTORS 4 AMPERE POWER TRANSISTORS NPN SILICON . . . designed fo r use in general-purpose a m plifier and switching circuits. Recommended fo r use in 5 to 20 W att audio am plifiers u ti­

Contextual Info: mi it ti mi S E M E 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE F0R HIGH RELIABILITY APPLICATIONS m e c h a n ic a l d a t a Dimensions " inches FEATURES • SILICON PLANAR EPITAXIAL NPN

MJE520

Abstract: JE520 CASE 77 MJE3520 MJE370 MJE520K mje3 MJE3370 MJE370K 20 watt audio amplifier
Contextual Info: MJE520 SILICON MJE520K MJE3520 3 AMPERE POWER TRANSISTORS PLASTIC MEDIUM-POWER NPN SILICON TRANSISTORS NPN SILICON 30 VO LTS 2 5 and 4 0 W A T T S . . . designed for use in general-purpose am plifier and switching circuits. Recommended fo r use in 5 to 10 W att audio am plifiers u ti­

FZT688B

Abstract: FZT788B DSA003713
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM FZT688B POWER HIGH GAIN TRANSISTOR ISSUE 3- OCTOBER 1995 FEATURES I ! I I RCE ,ti 83mQ at 3A low equivalent on resistance; ‘ Extremely ‘ Gain of 400 at IC=3 Amps and very low saturation voltage c, APPLICATIONS * Flash gun convertors & Batte~

BDL31

Contextual Info: Philips Semiconductors Preliminary specification NPN medium power transistor FEATURES BDL31 PINNING • High current max. 5 A PIN DESCRIPTION • Low voltage (max. 10 V) 1 • Low collector-emitter saturation voltage ensures reduced power dissipation. 2

Contextual Info: Philips Semiconductors Product specification NPN medium power transistor BC868 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). 1 APPLICATIONS DESCRIPTION emitter 2 collector 3 base • General purpose switching and amplification

BFY52

Abstract: bfy50 BFY51 BFY50-BFY51 BFY51 philips
Contextual Info: Philips Semiconductors Product specification NPN medium power transistors BFY50; BFY51 ; BFY52 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 35 V). DESCRIPTION 1 APPLICATIONS emitter 2 base 3 collector, connected to case • General purpose industrial applications.

ti NPN medium power transistor

Abstract: bf199 transistor NPN BF199 bf199 transistor
Contextual Info: Philips Semiconductors Product specification NPN medium frequency transistor FEATURES BF199 PINNING • Low current max. 25 mA PIN • Low voltage (max. 25 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION • Output stage of a vision IF amplifier.

Contextual Info: Philips Semiconductors Product specification NPN medium power transistor 2N1893 FEATURES PINNING • Low current max. 500 mA PIN DESCRIPTION • Low voltage (max. 80 V). 1 2 base APPLICATIONS 3 collector, connected to case emitter • High performance amplifiers

marking 603 npn transistor

Abstract: marking HA 7 sot23
Contextual Info: Philips Semiconductors Product specification NPN medium frequency transistor FEATURES BFS20 PINNING • Low current max. 25 mA PIN DESCRIPTION • Low voltage (max. 20 V) 1 base • Very low feedback capacitance (typ. 350 fF). 2 emitter 3 collector APPLICATIONS

BF370

Abstract: transistor BF370
Contextual Info: Philips Semiconductors Product specification NPN medium frequency transistors FEATURES BF370; BF370R PINNING • Low current max. 100 mA PIN • Low voltage (max. 15 V). DESCRIPTION PIN BF370 APPLICATIONS • IF pre-amplifiers of television receivers. DESCRIPTION

TRANSISTOR D16

Contextual Info: Die no. D-16 NPN medium power transistor These are epitaxial planar NPN silicon transistors. Dimensions Units : mm SST3 Features available in a SST3 (SST, SOT-23) package, see page 300 collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at 1.0 mA

transistor 2N4401

Abstract: 2n4401 die
Contextual Info: Die no. C-31 NPN medium power transistor Dimensions Units : mm These epitaxial planar NPN silicon transistors are gold doped. TO-92 Features • available in TO-92 package; for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVceo = 40 V (min) at

Contextual Info: TIP31A/31C TI P32 A/32 B/32C COMPLEMENTARY SILICON POWER TRANSISTORS APPLICATION . LINEARAND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP31A and TIP31C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are intented

Marking R1P

Abstract: r1p 11 TRANSISTOR R2X SOT23 sst2222a R1P SOT-223
Contextual Info: Die no. C-31 NPN medium power transistor These epitaxial planar NPN silicon transistors are gold doped. Dimensions Units : mm SST3 Features • 0.951 f 1' 0.45±0.1 l.9±0.2 available in the following packages: |0.9S^0,tej L — SST3 (SST, SOT-23) — SMT3 (SMT, SC-59)

mje340

Abstract: mje350 mje340 transistor mje350 transistor MJE340-MJE350 MJE-350 TRANSISTOR MJE350 TRANSISTOR MJE340 MJE-340
Contextual Info: MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES • COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a silicon epitaxial planar NPN transistor intended for use in medium power

2N4033

Contextual Info: 9 T ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 -a * <$h. TEE 2N3019, 2NJ020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH­ ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033» 2N4031.

transistor ai 757

Abstract: bF240 transistor AN 6752 philips BF240 philips
Contextual Info: DISCRETE SEMICONDUCTORS 1999 Apr 21 Product specification Supersedes data of 1998 Dec 02 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN medium frequency transistor BF240 FEATURES PINNING • Low current max. 25 mA

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification NPN medium power transistor BDP31 FEATURES PINNING • High current max. 3 A PIN • Low voltage (max. 45 V).

TPS71733DCK

Abstract: OMAP-L138 TMS320C6742 TMS320C6746 TMS320C6748 TMS320C6748 dsp schematic
Contextual Info: Application Report SLVA343 – June 2009 Medium Integrated Power Solution Using a Dual DC/DC Converter and an LDO Ambreesh Tripathi . PMP - DC/DC Low-Power Converters ABSTRACT This reference design is intended for users designing with the TMS320C6742,

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Apr 08 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN medium power transistors BCP54; BCP55; BCP56 FEATURES PINNING • High current max. 1 A

transistors ai 757

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BSP41 ; BSP43 NPN medium power transistors Product specification Supersedes data of 1997 Sep 05 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification NPN medium power transistors BSP41 ; BSP43

NPN pnp MATCHED PAIRS 2n2905A 2N2219A

Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
Contextual Info: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y iI T BCP68 NPN medium power transistor Product specification Supersedes data of 1997 Apr 09 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN medium power transistor BCP68 FEATURES