BFS20 Search Results

TRANSISTOR SMD MARKING g1

Abstract: smd transistor g1 ff 0401 transistor g1 smd TRANSISTOR marking G1 sot-23 G1 SOT-23 G1 TRANSISTOR ff 0401 smd transistor marking g1 BFS20
Contextual Info: Transistors SMD Type NPN Medium Frequency Transistor KFS20 BFS20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 25 mA) 0.4 3 Features 1 Very low feedback capacitance (typ. 350 fF). 0.55 Low voltage (max. 20 V) 2 +0.1

BFS20

Contextual Info: BFS20 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free FEATURES Collector 3 3 High Fequency Application. 1 VHF Band Amplifier application SOT-23 1 2 RoHS Compliant Product Dim Min Max Base

BFS20

Contextual Info: SEMICONDUCTOR BFS20/BF599 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. E B L L 2 UNIT H RATING A SYMBOL Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V BFS20 1 P 4 VEBO P Collector Current

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BFS20W NPN medium frequency transistor Product specification 1999 Apr 21 Philips Semiconductors Product specification NPN medium frequency transistor BFS20W FEATURES PINNING • Low current max. 25 mA

"UHF Transistors"

Abstract: BFS88 ZTX196 ZTX326A ZTX325 ZTX326 BFS17 BFS20 BFS20R BFS85
Contextual Info: RADIO, TV I I.F. TRANSISTORS Type V cbo Volts Max. Volts Max, Volts Max. lc mA Max. VCEO V ebo Typical Feedback Capacity Typical Package fr BFS20 30 20 4.0 25 B FS20R * 30 20 4.0 25 ZTX196 f 40 30 4.0 25 0.3 pF, lc = 1 mA, V CE = 10V, f = 10.7 M H z 400 M H z,

g2 SOT-23 NPN

Abstract: BF599 BFS20 G1 TRANSISTOR transistor BF599
Contextual Info: SEMICONDUCTOR BFS20/BF599 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. E B L L UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V IC 25 mA Emitter Current IE -25 mA Collector Power Dissipation

BFS20W

Abstract: marking N1 sc70
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BFS20W NPN medium frequency transistor Product data sheet 1999 Apr 21 NXP Semiconductors Product data sheet NPN medium frequency transistor BFS20W FEATURES PINNING • Low current max. 25 mA PIN • Low voltage (max. 20 V).

BFS20

Abstract: 3b2 marking
Contextual Info: • bbS3T31 N AMER ÜDESS7S 42b ■ PHILIPS/DISCRETE APX b7E BFS20 D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N tra n s is to r in a m icro m in ia tu re plastic envelope. It has a very lo w feedback capacitance and is intended fo r i.f. and v.h .f. applica tio n s in th ic k and th in -film circuits.

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D102 BFS20W NPN medium frequency transistor Product data sheet 1999 Apr 21 NXP Semiconductors Product data sheet NPN medium frequency transistor BFS20W FEATURES PINNING • Low current max. 25 mA PIN • Low voltage (max. 20 V).

BFS20W

Abstract: 900MHZ 5d3 transistor
Contextual Info: BFS20W NPN Medium Frequency Transistor COLLECTOR 3 3 P b Lead Pb -Free 1 1 BASE FEATURES Low current(max 25 mA) Low voltage(max. 20V) Very low feedback capacitance (typ.350fF) SOT-323 / SC-70 package. 2 EMITTER 2 SOT-323(SC-70) APPLICATION IF and VHF applications in thick and thin-film circuits.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BFS20 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.025 A ICM: Collector-base voltage

Contextual Info: • bbS3T31 DDES373 42b * A P X N AP1ER PHILIPS/DISCRETE BFS20 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistor in a microminiature plastic envelope. It has a very low feedback capacitance and is intended for i.f. and v.h.f. applications in thick and thin-film circuits.

BFS20

Abstract: NPN Silicon Epitaxial Planar Transistor high frequency transistor
Contextual Info: BFS20 NPN Silicon Epitaxial Planar Transistor High frequency transistor for IF and VHF applications SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20

BFS20

Abstract: BF599 G2 marking
Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO-LTD BFS20/BF599 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYM BO L Collector-Base Voltage UNIT 40 V CBO Collector-Emitter Voltage

BFS20

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFS20 NPN medium frequency transistor Product specification Supersedes data of 2004 Jan 5 2004 Feb 05 Philips Semiconductors Product specification NPN medium frequency transistor BFS20 FEATURES PINNING • IC max = 25 mA

BFS20

Contextual Info: BFS20 SMALL SIGNAL NPN TRANSISTOR • ■ ■ Type Marking BFS20 G1 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS COMMON EMITTER IF AMPLIFIER 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS

marking 603 npn transistor

Abstract: marking HA 7 sot23
Contextual Info: Philips Semiconductors Product specification NPN medium frequency transistor FEATURES BFS20 PINNING • Low current max. 25 mA PIN DESCRIPTION • Low voltage (max. 20 V) 1 base • Very low feedback capacitance (typ. 350 fF). 2 emitter 3 collector APPLICATIONS

TRANSISTOR gy 740

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jul 08 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN medium frequency transistor BFS20 FEATURES PINNING • Low cu rrent max. 25 mA PIN DESCRIPTION

BFS20

Contextual Info: SOT23 NPN SILICON PLANAR VHF TRANSISTOR ISSUE 3 – JANUARY 1996 BFS20 ✪ PARTMARKING DETAIL — G1 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO

bfs20

Contextual Info: BFS20 BFS20 Surface Mount Si-Epi-Planar Transistors Si-Epi-Planar Transistoren für die Oberflächenmontage NPN NPN Version 2012-11-26 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type Code 200 mW

BFS20

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFS20 NPN medium frequency transistor Product data sheet Supersedes data of 2004 Jan 5 2004 Feb 05 NXP Semiconductors Product data sheet NPN medium frequency transistor BFS20 FEATURES PINNING • IC max = 25 mA PIN DESCRIPTION

bfs20

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFS20 NPN medium frequency transistor Product specification Supersedes data of 1999 Apr 15 2004 Jan 05 Philips Semiconductors Product specification NPN medium frequency transistor BFS20 FEATURES PINNING • IC max = 25 mA

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFS20 NPN medium frequency transistor Product data sheet Supersedes data of 2004 Jan 5 2004 Feb 05 NXP Semiconductors Product data sheet NPN medium frequency transistor BFS20 FEATURES PINNING • IC max = 25 mA PIN DESCRIPTION

Contextual Info: DISCRETE SEMICONDUCTORS a ffi S H E E T BFS20W NPN medium frequency transistor 1999 Apr 21 Product specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN medium frequency transistor BFS20W FEATURES PINNING • Low current max. 25 mA