MJE3 Search Results

Contextual Info: UTC MJE3055T NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified

mje340

Contextual Info: MJE340 MJE340 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE350 TO-126 1 1 . Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

mje350

Contextual Info: MJE350 MJE350 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE340 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

MJE340 datasheet

Abstract: MJE340 mje340 equivalent transformerless Power Transistors TO-126 Case
Contextual Info: SavantIC Semiconductor Product Specification MJE340 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated equipment

mje350 transistor

Abstract: Motorola bipolar transistor MJE350 MJE350 PIN
Contextual Info: MOTOROLA Order this document by MJE350/D SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated

transistor MJE3055T

Contextual Info: SILICON EPITAXIAL PLANAR TRANSISTOR MJE3055T/MJE2955T GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-220 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC ICM Ptot VCEsat VF tf PARAMETER

Contextual Info: MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES • High C urrent G ain-Bandw idth Product f j = 2kHz (MIN ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic V cbO

je340 transistor

Abstract: JE340
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR MJE350 HIGH COLLECTOR-EMITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMERLESS, LINE OPERATED EQUIPMENT • C om plem ent to M JE340 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage

JE350

Contextual Info: MJE350 Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •

JE341

Abstract: MJE31 MJE341 MJE341K MJE344 MJE344K
Contextual Info: MJE341 MJE341K SILICON MJE344 MJE344K PLASTIC NPN SILICON MEDIUM-POWER TRANSISTORS . . . designed fo r power ou tp u t stages in television, radio, phonograph and other consumer product applications. • Recommended for 1.5 W Class A O u tp u t in Transform er Coupled,

221D

Abstract: AN1040 MJE2955T MJE3055T MJF2955 MJF3055
Contextual Info: MJF3055 NPN , MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. • • • • • • • • • http://onsemi.com Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T

transistor MJE3055

Abstract: MJE3055 mje3055 transistor MJE3055 TO-225
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 MJE3055 Plastic-Encapsulate Transistors TO-220 TRANSISTOR NPN 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER GENERAL PURPOSE AND SWITCHING APPLICATIONS. 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: UTC MJE3055T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified

Contextual Info: MJE344G Plastic NPN Silicon Medium-Power Transistor This device is useful for medium voltage applications requiring high fT such as converters and extended range amplifiers. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*

je340

Abstract: MJE340 je340 transistor MJE34 power transistor mje340 transistor MJE34 MJE340 b c e MJE340K je-340 AN-415
Contextual Info: MJE340 SILICO N MJE340K 0.5 A M PER E POWER T R A N SIST O R PLASTIC M E D IU M POWER NPN S ILIC O N T R A N SIST O R NPN SILIC O N 300 VOLTS 20.8 and 30 WATTS . designed for power output stages for television, radio, phonograph and other consumer product applications.

MJE370

Abstract: MJE520 MUE370 MJE3370 MJE3520 MJE370K MJE371 MJE520K EC 401 TRANSISTOR
Contextual Info: MJE370 SILICON MJE370K MJE3370 PLASTIC MEDIUM-POW ER PNP SILIC O N T R A N SIST O R S 3 AM PERE POWER T R A N SIST O R S PNP SILIC O N . . . designed for use in general-purpose amplifiers and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers uti­

MJE4923

Abstract: MJE4918 MJE3521 MJE520 mje4920 WE VQE 24 E MJE3739 MJE4921 WE VQE 11 E 2N4918
Contextual Info: MJE3520 'silicon For c Specifications, _ . See e U TCC,nn f MJE520 Data. ' MJE3521 (SILICON) For SpecificationS; See MJE521 Data. MJE3738 (silicon) MJE3739 0.5 AM PERE NPN S ILIC O N H IG H -V O LTA G E T R A N S IS T O R S POW ER T R A N SISTO R S . . . designed fo r use in line-operated equipment such as audio output

MJE371

Abstract: je371 MJE371K MJE3371 MJE3521 MJE521K MJE-371 l371 MJE521 19904
Contextual Info: MJE371 S IL IC O N MJE371K MJE3371 4 AMPERE POWER TRANSISTORS PLASTIC MEDIUM-POWER PNP SILICON TRANSISTORS PNP SILICON 40 VOLTS 40 and 60 WATTS . . . designed fo r use in general-purpose am plifier and switching circuits. Recommended fo r use m 5 to 20 W att audio am plifiers u ti­

MJE370

Abstract: MJE3439 JE3440 MJE3370 MJE3440 MJE3371 MJE371 MJE-3439
Contextual Info: MJE3370 SILICON For SpecificationS; See MJE370 Data. ^ U E 3 3 7 1 (SILICON) For Specifications, See MJE371 Data. MJE3439, MJE3440 (SILICON) 0.3 AMPERE NPN SILICO N HIG H-VO LTAG E POWER TRANSISTORS NPN SILICON POWER TRANSISTORS . . . designed for use as video o utput amplifiers in television receivers

T1P42C

Abstract: T1P-42C 53a33 2sb85 T1P42A T1P32B T1P32A
Contextual Info: POWER PACKAGE TRANSISTORS PNP M axim um R atin gs E lectrical C h aracte ristics VCE0 v EBO PD 'CBO « v CB (V) (V) (W) (V) Un Mn Mn a Tc=25°C MJE350T 300 300 3 21 100 300 30 240 0.05 10 2SA940 150 150 5 25 10 120 40 140 0.50 10 1.5 BD240C 115 100 5 30

JE3439

Abstract: SGS3439
Contextual Info: ‘ •_ Tggq1 5 3 7 QQa g i o 1 M Ml ^ SGS-THOMSON t^DO^ ILi©1T[H] â [MD(gl 3 3 -o 7 _ MJE3439-SGS3439 MJE3440-SGS3440 S G S-THOMSON 3QE » HIGH VOLTAGE TRANSISTOR DESC RIPTIO N The MJE3439, MJE3440, SQS3439 and SGS3440 are NPN silicon epitaxial planar transistors respec­

350T

Abstract: SGS340
Contextual Info: 7 ^ 2 3 7 005=1003 SCS-THOMSON ^ HILiCT@[fflD@§ S G S-TH0M S0N b • ^ T '3 3 ' 0 °\ MJ E340/T/SGS340 MJE350/T/SGS350 30E D HIGH VOLTAGE POWER TRANSISTORS DESCRIPTION The MJE340, MJE340T, SGS340 are silicon epi­ taxial planar NPN transistors intended for use in

MJE3440

Contextual Info: MJE3440 SILICON NPN TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon Epitaxial Planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications.

MJE3055T

Abstract: MJE305
Contextual Info: MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES TO-220 • High Current Gain-Bandwidth Product fT = 2kHz (MIN ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector-Emitter Voltage