MJE350T Search Results

MJE350T Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MJE350T		Continental Device India	POWER PACKAGE TRANSISTORS (PNP)		Scan	PDF
MJE350T		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
MJE350T		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF

MJE350T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
T1P42C Abstract: T1P-42C 53a33 2sb85 T1P42A T1P32B T1P32A Text: POWER PACKAGE TRANSISTORS PNP M axim um R atin gs E lectrical C h aracte ristics VCE0 v EBO PD 'CBO « v CB (V) (V) (W) (V) Un Mn Mn a Tc=25°C MJE350T 300 300 3 21 100 300 30 240 0.05 10 2SA940 150 150 5 25 10 120 40 140 0.50 10 1.5 BD240C 115 100 5 30	OCR Scan	MJE350T 2SA940 BD240C BD242C 2SB856A 2SB856C BD242 BD244 TIP32 TIP42 T1P42C T1P-42C 53a33 2sb85 T1P42A T1P32B T1P32A	PDF
T1P127 Abstract: T1P42C TIP3iC T1P-127 MJE350T 2SA940 BD240C BD242B BD242C MJE2S55T Text: PO W ER P A C K A G E T R A N SIST O R S PNP M a x im u m R a t in g s Typ» No. VcBO Electrical C h a ra c te ris tic s « vCB « lc 4 VCE 00 hin VCE0 (V) Mn MJE350T 300 300 3 21 100 300 30 240 0.05 10 2SA940 150 150 5 25 10 120 40 140 0.50 10 1.5 BD240C	OCR Scan	MJE350T 2SA940 BD240C BD242C BD244C 2SB856 2SB856A 2SB856C BD242 BD244 T1P127 T1P42C TIP3iC T1P-127 BD242B MJE2S55T	PDF
Untitled Abstract: No abstract text available Text: MJE350T Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)135õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	MJE350T	PDF
350T Abstract: SGS340 Text: 7 ^ 2 3 7 005=1003 SCS-THOMSON ^ HILiCT@[fflD@§ S G S-TH0M S0N b • ^ T '3 3 ' 0 °\ MJ E340/T/SGS340 MJE350/T/SGS350 30E D HIGH VOLTAGE POWER TRANSISTORS DESCRIPTION The MJE340, MJE340T, SGS340 are silicon epi taxial planar NPN transistors intended for use in	OCR Scan	E340/T/SGS340 MJE350/T/SGS350 MJE340, MJE340T, SGS340 O-125, O-220 OT-82 MJE350, MJE350T, 350T	PDF
mje520 Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50	OCR Scan	BD433 MJE200 MJE520 BD435 2N4921 2IM5190 2IM6037 MJE521 MJE180 BD135 SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP	PDF
JE340 Abstract: No abstract text available Text: r z 7 SGS-THOMSON ^7# MJE340/T/SGS340 MJ E350/T/SGS350 HIGH VOLTAGE POWER TRANSISTORS DESCRIPTION The M JE340, MJE340T, SGS340 are silicon e p i taxial planar NPN transistors intended for use in m edium power linear and sw itching applications. They are respectively m ounted in TO-125, TO-220	OCR Scan	MJE340/T/SGS340 E350/T/SGS350 JE340, MJE340T, SGS340 O-125, O-220 OT-82 JE350, MJE350T, JE340	PDF
2SA566 Abstract: 40319 2sa8160 2SA816-Y 2SA816Y 2SA13560 40634S 2SA816 TN2905 MJ4646 Text: POWER SILICON PNP Item Number Part Number I C -5 10 15 20 25 30 35 40 45 50 60 2SB806 2SA1248 40634 40319 40319L 40319S 40406 40538 :g~~:~ 65 70 40537 40537L 40537S 40362 40362L 40362S 40634L 40634S ~~~~g~7 75 80 85 90 95 Ic Max V(BR)CEO (A) (V) hFE Min Max	Original	CorpTO-126var O-126var O-220AB O-126 O-202var O-126 2SA566 40319 2sa8160 2SA816-Y 2SA816Y 2SA13560 40634S 2SA816 TN2905 MJ4646	PDF
2M3055 Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908 Text: G E N E R A L P U R P O S E T R A N S IS T O R S Comple Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047	OCR Scan	2N3055 2N3715 2N3716 2N3771 2M3772 2N3791 2N3792 2N4234 2N4398 2N4399 2M3055 B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908	PDF