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    TH50 Search Results

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    TH50 Price and Stock

    Broadcom Limited ACNT-H50L-500E

    OPTOISO 7.5KV TRANSISTOR 8SO
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    DigiKey ACNT-H50L-500E Digi-Reel 2,087 1
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    ACNT-H50L-500E Cut Tape 2,087 1
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    ACNT-H50L-500E Reel 2,000 1,000
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    Avnet Americas ACNT-H50L-500E Reel 5,000 22 Weeks 1,000
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    Newark ACNT-H50L-500E Cut Tape 100 1
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    EBV Elektronik ACNT-H50L-500E 5,000 24 Weeks 1,000
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    Murata Manufacturing Co Ltd DLW5ATH500MQ2L

    CMC 4A 2LN 50 OHM SMD AEC-Q200
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    DigiKey DLW5ATH500MQ2L Reel 1,400 700
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    TME DLW5ATH500MQ2L 700
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    Avnet Abacus DLW5ATH500MQ2L 27 Weeks 700
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    Chip Stock DLW5ATH500MQ2L 53,000
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    STMicroelectronics STTH506D

    DIODE GEN PURP 600V 5A TO220AC
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    DigiKey STTH506D Tube 906 1
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    STMicroelectronics STTH506D 1,752 1
    • 1 $1.85
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    ComSIT USA STTH506D 1,946
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    Littelfuse Inc 0607063.UXTH500P

    FUSE CERM 63A 500VAC 500VDC RAD
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    DigiKey 0607063.UXTH500P Tray 775 1
    • 1 $11.76
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    Mouser Electronics 0607063.UXTH500P 793
    • 1 $9.97
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    TTI 0607063.UXTH500P Tray 500
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    Chip1Stop 0607063.UXTH500P Tray 458
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    New Advantage Corporation 0607063.UXTH500P 1,000 1
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    ROHM Semiconductor RGTH50TS65DGC13

    IGBT TRNCH FIELD 650V 50A TO247G
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    DigiKey RGTH50TS65DGC13 Tube 600 1
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    Mouser Electronics RGTH50TS65DGC13 588
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    Newark RGTH50TS65DGC13 Bulk 22 1
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    Ameya Holding Limited RGTH50TS65DGC13 30 1
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    Chip1Stop RGTH50TS65DGC13 Tube 120
    • 1 $3.79
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    TH50 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TH505GWB Highland Electronics LED Digit Display Original PDF
    TH505IDR Highland Electronics LED Digit Display Original PDF
    TH506GWB Highland Electronics LED Digit Display Original PDF
    TH506IDR Highland Electronics LED Digit Display Original PDF
    TH50VPN5640EBSB Toshiba MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE Original PDF
    TH50VSF1480AASB Toshiba Multi Chip Package SRAM & FLASH Memory 2MBIT SRAM (x8/x16) 16MBIT FLASH (x8/x16) Scan PDF
    TH50VSF1480AASB Toshiba SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE Scan PDF
    TH50VSF1481AASB Toshiba SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE Scan PDF
    TH50VSF1481AASB Toshiba Multi Chip Package SRAM & FLASH Memory 2MBIT SRAM (x8/x16) 16MBIT FLASH (x8/x16) Scan PDF
    TH50VSF2480AASB Toshiba SRAM and FLASH Memory Mixed Multi Chip Package Scan PDF
    TH50VSF2480AASB Toshiba COMBO MEMORY 1MX16/2MX8 FLASH + 256X16/512K x 8 SRAM 3.3V 65LFBGA Scan PDF
    TH50VSF2481AASB Toshiba SRAM and FLASH Memory Mixed Multi Chip Package Scan PDF
    TH50VSF2481AASB Toshiba COMBO MEMORY 1MX16/2MX8 FLASH + 256X16/512K x 8 SRAM 3.3V 65LFBGA Scan PDF
    TH50VSF2580AASB Toshiba Original PDF
    TH50VSF2581AASB Toshiba Original PDF
    TH50VSF2582 Toshiba SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE Original PDF
    TH50VSF2582AASB Toshiba Memory, SRAM And Flash Memory Mixed Muli-Chip Message Original PDF
    TH50VSF2583AASB Toshiba SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE Original PDF
    TH50VSF3580AASB Toshiba Original PDF
    TH50VSF3581AASB Toshiba Original PDF

    TH50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BA102

    Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original
    PDF TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96

    TH50VSF3581AASB

    Abstract: A12F TH50VSF3580AASB
    Text: TH50VSF3580/3581AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3580/3581AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original
    PDF TH50VSF3580/3581AASB TH50VSF3580/3581AASB 608-bit 432-bit 69-pin 3/3581AASB XXXh/60h) BPA/60h) TH50VSF3581AASB A12F TH50VSF3580AASB

    TH501

    Abstract: TH501 resistance TH50 220 v ac to 24 v dc th503 TH501S conductivity meter circuit th504 DIN48 TH502S
    Text: DIN48 MINUTES INDICATOR HOUR METER 80.5 3.169 TH50 Hour Meters Features 1. Measurement and management in units of minutes Unlike conventional hour meters, the time can be measured and managed in minutes. 2. Reset button The hour meters can be reset to zero for repeated measurement.


    Original
    PDF DIN48 EN60947-1 EN609473 TH501 TH501 resistance TH50 220 v ac to 24 v dc th503 TH501S conductivity meter circuit th504 TH502S

    A12F

    Abstract: TH50VSF2580AASB TH50VSF2581AASB TH50VSF2580
    Text: TH50VSF2580/2581AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF2580/2581AASB is a mixed multi-chip package containing a 4,194,304-bit full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original
    PDF TH50VSF2580/2581AASB TH50VSF2580/2581AASB 304-bit 432-bit 69-pin XXXH/60H) BPA/60H) XXXH/40H) A12F TH50VSF2580AASB TH50VSF2581AASB TH50VSF2580

    a12s

    Abstract: TH50VSF1480AASB A12F TH50VSF1481AASB
    Text: TH50VSF1480/1481AASB TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF1480/1481AASB is a mixed multi-chip package containing a 2,097,152-bit Full CMOS SRAM and a 16,777,216-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original
    PDF TH50VSF1480/1481AASB TH50VSF1480/1481AASB 152-bit 216-bit 65-pin P-LFBGA65-1209-0 a12s TH50VSF1480AASB A12F TH50VSF1481AASB

    BA102

    Abstract: diode ba102 diode ba103 BA127 Diode BA102 equivalent BA111 Ba91 diode ba110 ba119 BA127
    Text: TH50VSF3682/3683AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3682/3683AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original
    PDF TH50VSF3682/3683AASB TH50VSF3682/3683AASB 608-bit 864-bit 69-pin XXXh/60h) BPA/60h) XXXh/40h) BA102 diode ba102 diode ba103 BA127 Diode BA102 equivalent BA111 Ba91 diode ba110 ba119 BA127

    hall current transducer 5A

    Abstract: 20x6 Th50a TH3A TH3A-B12 TH-50a
    Text: Topstek Current Transducer TH3A . TH50A TH 3A~50A Applications Features iHighly reliable Hall Effect device iCompact and light weight iFast response time iExcellent linearity of the output voltage over a wide input range iExcellent frequency response > 50 kHz


    Original
    PDF TH50A 0-30A V080201 TH50A hall current transducer 5A 20x6 TH3A TH3A-B12 TH-50a

    A12F

    Abstract: TH50VSF3580AASB TH50VSF3581AASB
    Text: TH50VSF3580/3581AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3580/3581AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original
    PDF TH50VSF3580/3581AASB TH50VSF3580/3581AASB 608-bit 432-bit 69-pin 3/3581AASB XXXh/60h) BPA/60h) A12F TH50VSF3580AASB TH50VSF3581AASB

    TH50VSF3680AASB

    Abstract: A12F TH50VSF3681AASB BA72 BA111 BA96 BA110 ba95 BA102 BA85
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original
    PDF TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) TH50VSF3680AASB A12F TH50VSF3681AASB BA72 BA111 BA96 BA110 ba95 BA102 BA85

    Untitled

    Abstract: No abstract text available
    Text: THROUGH HOLE HEADERS TH50DXXS33-XX-X Packaging: B=Bulk T=Tubes Tail Length: 01=0.060 02=0.090 Pins/rows 02 through 15 SMT HEADERS SMH50DXX33-01X Packaging:T = Tubes (Standard) R = Tape and Reel Pins/rows (02 through 15) ALL INFORMATION CONTAINED HEREIN IS BELIEVED TO BE RELIABLE AS OF THE DATE OF


    Original
    PDF TH50DXXS33-XX-X SMH50DXX33-01X

    A12F

    Abstract: TH50VSF3582AASB TH50VSF3583AASB
    Text: TH50VSF3582/3583AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original
    PDF TH50VSF3582/3583AASB TH50VSF3582/3583AASB 608-bit 432-bit 69-pin XXXh/60h) BPA/60h) XXXh/40h) A12F TH50VSF3582AASB TH50VSF3583AASB

    th50vsf1400

    Abstract: BA30
    Text: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory


    OCR Scan
    PDF 50VSF1400/1401ACXB TH50VSF1400/1401ACXB 152-bit 216-bit 48-pin 50VSF1400/1401 th50vsf1400 BA30

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TH 50VSF1420/1421AAXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS SRA M AND FLASH M EM O R Y M IXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF1420/1421AAXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216 bit flash memory. The SEA M is organized as 262,144 words by 8 bits and the flash memory


    OCR Scan
    PDF 50VSF1420/1421AAXB TH50VSF1420/1421AAXB 152-bit 48-pin P-BGA48-1014-1 TH50VSF14

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TH50VSF1302/1303AAXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF1302/1303AAXB is a package of mixed 2,097,152-bit SRAM and 8,388,608-bit FLASH memory. The SRAM and FLASH memory organized 262,144 words by 8 bits SRAM and 1,048,576


    OCR Scan
    PDF TH50VSF1302/1303AAXB TH50VSF1302/1303AAXB 152-bit 608-bit 48-pin

    8a21

    Abstract: ba1s F2480 A12F TH50VSF2480AASB TH50VSF2481AASB a19t
    Text: SFP- TOSHIBA Multi Chip Package SRAM & FLASH Memory 4M BIT SRAM X 8/ X16 16M BIT FLASH ( X 8/X 16) Data Sheet TOSHIBA TH50VSF2480/2481AASB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION


    OCR Scan
    PDF F2480/2481 TH50VSF2480/2481AASB 304-bits 216-bits 65-pin P-LFBGA65-1209-0 8a21 ba1s F2480 A12F TH50VSF2480AASB TH50VSF2481AASB a19t

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TH 50VSF1420/1421AAXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF1420/1421AAXB is a package of mixed 2,097,152-bit SRAM and 16,777,216-bit FLASH memory. The SRAM and FLASH memory organized 262,144 words by 8 bits SRAM and 1,048,576


    OCR Scan
    PDF 50VSF1420/1421AAXB TH50VSF1420/1421AAXB 152-bit 216-bit 48-pin P-BGA48-1014-1 50VSF1420/1421

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TH50VSF0320/0321BCXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH M EM O RY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH 50V SF0320/0321BCXB is a mixed containing a package 1,048,576-bit SRAM and a 8,388,608bit flash memory. The SRAM is organized as 131,072 words by 8 bits and the flash memory is


    OCR Scan
    PDF TH50VSF0320/0321BCXB SF0320/0321BCXB 576-bit 608bit 48-pin P-BGA48-1012-1 TH50VSF0320/0321

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TH 50VSF0400/0401ACXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS SRAM AND FLASH M EM O RY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF0400/0401ACXB is a m ixed containing a package 1,048,576-bit SRAM an d a 16,777,216-bit flash m em ory. The SRAM is organized as 131,072 words by 8 b its and the flash memory


    OCR Scan
    PDF 50VSF0400/0401ACXB TH50VSF0400/0401ACXB 576-bit 216-bit 48-pin P-BGA48-1014-1

    Untitled

    Abstract: No abstract text available
    Text: THERMISTORS/RESISTORS NTC THERM ISTORS-INRUSH CURRENT SUPPRESSION TH5000 SERIES The N TH5000 series effectively suppress rush currents which arise when swit hing power regulators or similar switches are turned on. FEATURES • Case type structure maintains lower


    OCR Scan
    PDF NTH5000 TH5000 H500M NTH5005A NIN5047 NTH5046 NTH504* 130TC

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TH50VSF0320/0321BCXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH M EM O RY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF0320/0321BCXB is a mixed containing a package 1,048,576-bit SRAM and a 8,388,608bit flash memory. The SRAM is organized as 131,072 words by 8 bits and the flash memory is


    OCR Scan
    PDF TH50VSF0320/0321BCXB TH50VSF0320/0321BCXB 576-bit 608bit 48-pin TH50VSF0320/0321 P-BGA48-1012-1

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TH 50VSF1400/1401AAXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE SRAM AND FLASH M EM ORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF1400/1401AAXB is a mixed containing a package 2,097,102-bit/ SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory


    OCR Scan
    PDF 50VSF1400/1401AAXB TH50VSF1400/1401AAXB 102-bit/ 216-bit 48-pin P-BGA48-1014-1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TH50VSF0302/0303AAXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF0302/0303AAXB is a package of mixed 1,048,576-bit SRAM and 8,388,608-bit FLASH memory. The SRAM and FLASH memory organized 131,072 words by 8 bits SRAM and 1,048,576


    OCR Scan
    PDF TH50VSF0302/0303AAXB TH50VSF0302/0303AAXB 576-bit 608-bit 48-pin

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TH50VSF1320/1321A A X B TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH M EM ORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF1320/1321AAXB is a mixed containing a package 2,097,152-bit SR A M and a 8,388,608bit fla s h m em ory. The SR A M ia organ ized as 262,144 w ords by 8 bits an d th e fla sh m em o ry is


    OCR Scan
    PDF TH50VSF1320/1321A TH50VSF1320/1321AAXB 152-bit 608bit TH50VSF1320/1321AAXB 48-pin P-BGA48-1012-1 TH50VSF1320/1321

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TH50VSF1302/1303AAXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SR A M A N D FLASH M E M O R Y M IXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF1302/1303AAXB is a package of mixed 2,097,152-bit SRAM and 8,388,608-bit FLASH


    OCR Scan
    PDF TH50VSF1302/1303AAXB TH50VSF1302/1303AAXB 152-bit 608-bit 48-pin 40//A