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    BA85 Search Results

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    BA85 Price and Stock

    ROHM Semiconductor BA8522RF-E2

    IC AUDIO 2 CIRCUIT 8SOP
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    DigiKey BA8522RF-E2 Cut Tape 1
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    BA8522RF-E2 Digi-Reel 1
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    BA8522RF-E2 Reel 2,500
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    Mouser Electronics BA8522RF-E2 2,463
    • 1 $1.26
    • 10 $1.13
    • 100 $0.882
    • 1000 $0.575
    • 10000 $0.475
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    ROHM Semiconductor BA8522RFV-E2

    IC OPAMP GP 2 CIRCUIT 8SSOPB
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    Bristol Electronics BA8522RFV-E2 2,490
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    Quest Components BA8522RFV-E2 1,992
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    ROHM Semiconductor BA8522RFVM-TR

    IC AUDIO 2 CIRCUIT 8MSOP
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    DigiKey BA8522RFVM-TR Reel 3,000
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    BA8522RFVM-TR Digi-Reel 1
    • 1 $1.96
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    BA8522RFVM-TR Cut Tape 1
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    Mouser Electronics BA8522RFVM-TR
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    Microchip Technology Inc MX555ABA850M000

    XTAL OSC XO 850.0000MHZ LVPECL
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    Microchip Technology Inc MX555ABA850M000 Tube 9 Weeks
    • 1 $11.74
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    NAC MX555ABA850M000 1
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    Microchip Technology Inc MX575RBA857M137

    XTAL OSC 857.137MHZ LVPECL
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    Microchip Technology Inc MX575RBA857M137 Tube 28 Weeks
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    NAC MX575RBA857M137 1
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    BA85 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA8500 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA8500 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA852 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA852 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA8522RF-E2 ROHM Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps, Integrated Circuits (ICs), IC OPAMP GP 6MHZ 8SOP Original PDF
    BA8522RFV-E2 ROHM Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps, Integrated Circuits (ICs), IC OPAMP GP 6MHZ 8SSOPB Original PDF
    BA8522RFVM-TR ROHM Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps, Integrated Circuits (ICs), IC OPAMP GP 6MHZ 8MSOP Original PDF
    BA855 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA855 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA855A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA855A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA855A ROHM VTR Control / Driver IC Scan PDF
    BA855AF Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA855AF ROHM VTR Control / Driver IC Scan PDF
    BA855F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA856 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA856 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA857 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA857 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA857F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BA85 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BA8522RFV

    Abstract: No abstract text available
    Text: Datasheet Operational Amplifiers Low Noise Operational Amplifiers BA8522Rxxx General Description Key Specifications  Operating Supply Voltage split supply : ±2V to ±16V  Temperature Range: -40°C to +105°C  Input Offset Voltage: ±1.5mV(Max)  Slew Rate:


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    PDF BA8522Rxxx BA8522Rxxx BA8522RFV

    4580R

    Abstract: BA15218 equivalent 4560r IC BA4558 BA4584 BA14741F ba4560 208 cl100 transistor gain ba4560 4558R
    Text: Operational Amplifiers / Comparators Low Noise Operational Amplifiers BA4558F, BA4558R F/FV/FVM, BA4560F, BA4560R F/FV/FVM, BA4564RFV BA4580R F/FVM, BA4584FV, BA4584R F/FV, BA8522R F/FV/FVM BA15218F, BA14741F, BA15532F, BA4510F/FV, BA2115F/FVM No.10049EAT16


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    PDF BA4558F, BA4558R BA4560F, BA4560R BA4564RFV BA4580R BA4584FV, BA4584R BA8522R BA15218F, 4580R BA15218 equivalent 4560r IC BA4558 BA4584 BA14741F ba4560 208 cl100 transistor gain ba4560 4558R

    4580R

    Abstract: BA4580RF BA8522RFV
    Text: Operational Amplifiers / Comparators Low Noise Operational Amplifiers BA4558F, BA4558R F/FV/FVM, BA4560F, BA4560R F/FV/FVM, BA4564RFV BA4580R F/FVM, BA4584FV, BA4584R F/FV, BA8522R F/FV/FVM BA15218F, BA14741F, BA15532F, BA4510F/FV, BA2115F/FVM No.11049EBT16


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    PDF BA4558F, BA4558R BA4560F, BA4560R BA4564RFV BA4580R BA4584FV, BA4584R BA8522R BA15218F, 4580R BA4580RF BA8522RFV

    4580R

    Abstract: 4560r BA15218 equivalent ic BA4560 pin diagram BA4584 cl100 transistor gain 4558 opamp schematic BA15532 equivalent GV 269 BA4560RF
    Text: Operational Amplifiers / Comparators Low Noise Operational Amplifiers BA4558F, BA4558R F/FV/FVM, BA4560F, BA4560R F/FV/FVM, BA4564RFV BA4580R F/FVM, BA4584FV, BA4584R F/FV, BA8522R F/FV/FVM BA15218F, BA14741F, BA15532F, BA4510F/FV, BA2115F/FVM No.11049EBT16


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    PDF BA4558F, BA4558R BA4560F, BA4560R BA4564RFV BA4580R BA4584FV, BA4584R BA8522R BA15218F, 4580R 4560r BA15218 equivalent ic BA4560 pin diagram BA4584 cl100 transistor gain 4558 opamp schematic BA15532 equivalent GV 269 BA4560RF

    BA8522RFV

    Abstract: No abstract text available
    Text: Datasheet Operational Amplifiers Low Noise Operational Amplifiers BA8522Rxxx General Description Key Specifications  Operating Supply Voltage split supply : ±2V to ±16V  Temperature Range: -40°C to +105°C  Input Offset Voltage: ±1.5mV(Max)  Slew Rate:


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    PDF BA8522Rxxx BA8522Rxxx BA8522RFV

    BA8522RF

    Abstract: BA852 BA8522RFV
    Text: 1/4 STRUCTURE SILICON MONOLITHIC INTEGRATED CIRCUIT FUNCTION LOW OFFSET VOLTAGE DUAL OPERATIONAL AMPLIFIERS PRODUCT SERIES BA8522RF BA8522RFV BA8522RFVM ・Operating temperature range -40[℃]~+105[℃] ・Slew Rate(3.0[V/us] typ.) ・High output current(Io=50[mA] typ.)


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    PDF BA8522RF BA8522RFV BA8522RFVM R0039A BA8522RF BA852 BA8522RFV

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


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    PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


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    PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    P-TFBGA63-0911-0

    Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


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    PDF TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112

    BA102

    Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


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    PDF TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96

    BA102

    Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
    Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for


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    PDF TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65

    K8P2815UQB

    Abstract: No abstract text available
    Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB

    BA258

    Abstract: ba146 BA148 ba198 BA204
    Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    PDF K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh

    samsung ba92

    Abstract: BA137 k8p3215
    Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K8P6415UQB 64-Ball 60Solder samsung ba92 BA137 k8p3215

    diode ba102

    Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
    Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


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    PDF TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641

    TC58FVM7B5BTG65

    Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


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    PDF TC58FVM7 TC58FVM7T5/B5B 134217728-bit, TC58FVM7B5BTG65 TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65

    BA100 diode

    Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
    Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance


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    PDF K5C6481NT 4Mx16) 512Kx16) 512Kx10 81-Ball 80x11 BA100 diode BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106

    06SEC

    Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
    Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash

    K8P6415UQB

    Abstract: K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64
    Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K8P6415UQB 047MAX 64-Ball 60Solder K8P6415UQB K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64

    BA8500

    Abstract: BA85 SW30 servo Speed servo Drum Capstan System
    Text: HFl COKP U V L J> V T R M T C /IC s for VTR Applications I v a d t im u u u d j iiy >i BA85 BA8500 * 9 >!kvMtmmmic “ r I T-77-17 IC for Capstam/Drum Phase Servo Control # J f ^ & | l / D i m e n s i o n s U n it: mm B A 8 5 0 0 ( i , VTROT Jf i* X * > S t > ‘ K' = > A x


    OCR Scan
    PDF T-77-17 BA8500 aS80Hz -S60HzA^ 40HzA 630Hz C5Ei5516plnaff 27pin| \frD26 BA85 SW30 servo Speed servo Drum Capstan System

    BA857

    Abstract: BA867 BA857F
    Text: VTR • IC /IC s for VTR Applications ROHM CO LT» 4QE B Ä 857/3Ä 857F BÄ8S7 7 • D ? < BA857/BA857F/BA867 7 a s a cm qqqm^^ q 4 ehrhm > x n Fine Slow - 7 ^ 7 7 -2 BA857, BA857F, BA867li, VTRO&SMSSyBfc UTBB f S U f c i J ' i / " j < 7 l C ? t 0 X P - ,


    OCR Scan
    PDF BA857/BA857F BA867 BA857/BA857F/BA867 T-77-Il BA857, BA857F, BA867IÃ BA857/BA867 16pln BA857 BA857F

    BA855A

    Abstract: BA855 BA855AF MM10 103JL
    Text: ROHM CO LTD VTR " 7620=5=1=1 0004=160 b B i R H M 40E BA855A/BA855AF I C / I C s for VTR Applications - 7=77-2.1 7 y - f > X O - Fine Slow B A 3 5 5 , • Wfé'ÿJ'i&EI/Dimensions Unit : mm -i BA 85 5A , B A 8 5 5 A F ( i, y ii.c ict', Hti v /uu7.jg£sb -/ -r


    OCR Scan
    PDF BA855A/BA855AF BA855A, BA855AF BA855A/BA855AF BA855A 100kQ 16pin, 18pin BA855 MM10 103JL