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    BA91 Price and Stock

    IDEC Corporation BA911S

    BA SERIES TERMINAL BLOCK
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    DigiKey BA911S Bulk 1
    • 1 $28.47
    • 10 $28.47
    • 100 $28.47
    • 1000 $28.47
    • 10000 $28.47
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    Mouser Electronics BA911S
    • 1 $22.74
    • 10 $21.6
    • 100 $20.12
    • 1000 $19.87
    • 10000 $19.87
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    Newark BA911S Bulk 1
    • 1 $23.4
    • 10 $23.4
    • 100 $19.26
    • 1000 $18.61
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    Onlinecomponents.com BA911S
    • 1 $18.76
    • 10 $16.74
    • 100 $14.9
    • 1000 $14.29
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    Master Electronics BA911S
    • 1 $18.76
    • 10 $16.74
    • 100 $14.9
    • 1000 $14.29
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    Sager BA911S 1
    • 1 $19.76
    • 10 $18.25
    • 100 $16.47
    • 1000 $16.47
    • 10000 $16.47
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    Siemens 14GP32BA91

    STARTER,FVNR,S2.5,THOLR,120/240V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 14GP32BA91 Box 1
    • 1 $1299.32
    • 10 $1299.32
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    Mouser Electronics 14GP32BA91
    • 1 $1299.31
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    Siemens 14GP82BA91

    STARTER,FVNR,S2.5,THOLR,120/240V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 14GP82BA91 Box 1
    • 1 $1334.78
    • 10 $1334.78
    • 100 $1334.78
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    Mouser Electronics 14GP82BA91
    • 1 $1334.78
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    Torex Semiconductor LTD XD6216BA91MR-G

    IC REG LINEAR 10.9V 150MA SOT25
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    DigiKey XD6216BA91MR-G Reel 3,000
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    • 10000 $0.40299
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    Avnet Americas XD6216BA91MR-G Reel 16 Weeks 3,000
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    Mouser Electronics XD6216BA91MR-G
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    • 10000 $0.388
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    Torex Semiconductor LTD XD6216BA91MR-Q

    Linear Voltage Regulator Positive 10.9V 150mA 5-Pin SOT-25 T/R - Tape and Reel (Alt: XD6216BA91MR-Q)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas XD6216BA91MR-Q Reel 16 Weeks 3,000
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    Find more BA91 price and stock on Findchips.com

    BA91 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA9101 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA9101B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA9101B Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA9101BF Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA9101BF Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA9101S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA9101S Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA9101SF Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA9101SF Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BA91 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    P-TFBGA63-0911-0

    Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112

    BA102

    Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original     		PDF TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96

    Untitled

    Abstract: No abstract text available
    Text: NOIS1SM0250A STAR250 250K Pixel Radiation Tolerant CMOS Image Sensor Features • • • • • • • • • • • • • • • • 512 x 512 Active Pixels 25 mm Pixel Size 1 inch Optical Format Up to 30 Frames per Second fps at Full Resolution


    Original     		PDF NOIS1SM0250A STAR250 NOIS1SM0250A/D

    BA102

    Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
    Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for


    Original     		PDF TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65

    K8P2815UQB

    Abstract: No abstract text available
    Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB

    BA258

    Abstract: ba146 BA148 ba198 BA204
    Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh

    samsung ba92

    Abstract: BA137 k8p3215
    Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P6415UQB 64-Ball 60Solder samsung ba92 BA137 k8p3215

    diode ba102

    Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
    Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641

    TC58FVM7B5BTG65

    Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original     		PDF TC58FVM7 TC58FVM7T5/B5B 134217728-bit, TC58FVM7B5BTG65 TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65

    94B41

    Abstract: No abstract text available
    Text: Ambient Light Sensor and Proximity Sensor with I2C Interface APS-16D25-11-DF8/TR8 1 1 234567381 1 9ABC3D51ECF5183D8CDF1 1 21345678719ABACB4DEA16EE876F4B6F181B1851 2134567871AE8B6F185C8FB1 21874F1AA1BA1ACB4E1AFA1 !1A"ACB6F#1


    Original     		PDF APS-16D25-11-DF8/TR8 9ABC3D51ECF 5183D8CDF1 21345678719ABACB4DEA16EE876F4B6 874F1A 147D6AFB1E6( 183D8CDF1 AEACBA91DAB 7-14F91. 21068A51. 94B41

    06SEC

    Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
    Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash

    K8P6415UQB

    Abstract: K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64
    Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P6415UQB 047MAX 64-Ball 60Solder K8P6415UQB K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64

    BA-914

    Abstract: cis Linear Image Sensor 60315
    Text: CYIS1SM0250AA STAR250 250K Pixel Radiation Hard CMOS Image Sensor Features Applications • 512 x 512 active pixels ■ Satellites ■ 25 m pixel size ■ Spacecraft monitoring ■ 1 inch optical format ■ Nuclear inspection ■ Up to 30 frames per second fps at full resolution


    Original     		PDF CYIS1SM0250AA STAR250 10-bit STAR250) STAR250BK7) BA-914 cis Linear Image Sensor 60315

    TC58FVM7B5BTG65

    Abstract: TC58FVM7t5BTG65 BK-10 HA145
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original     		PDF TC58FVM7 134217728-bit, TC58FVM7B5BTG65 TC58FVM7t5BTG65 BK-10 HA145

    BA254

    Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT
    Text: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features


    Original     		PDF TC58FVM7 128-MBIT TC58FVM7T2A/B2A 134217728-bit, BA254 ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT

    HAS2 cypress

    Abstract: STAR250 long range gold detector circuit diagram digital SUN SENSOR cmos detector space radiation BK7G18 psoc new projects 2011 RAD-HARD distance sensor STAR-1000 STAR250 star tracker AD03
    Text: CYIH1SM1000AA-HHCS Detailed Specification - ICD 1. Introduction 1.7 Handling Precautions 1.1 Scope This version of the ICD is the version generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, test- and


    Original     		PDF CYIH1SM1000AA-HHCS HAS2 cypress STAR250 long range gold detector circuit diagram digital SUN SENSOR cmos detector space radiation BK7G18 psoc new projects 2011 RAD-HARD distance sensor STAR-1000 STAR250 star tracker AD03

    86A83

    Abstract: No abstract text available
    Text: 1111 1234565471839A1B8CDEF211 3456789ABC1DEF11F1 4C1813456789ABC11 1 3 1!"#"$1  541 59D1 9DE1 6ECAC983E1 83F1 E7E689B6E1 55E44AAE391 541


    Original     		PDF 1234565471839A1B8CDEF 3456789ABC1DEF 13456789ABC1 /418F E16ECAC9561FA AFE61 53CAC9C154181 E3FE39 ACA531 6ECAC983 86A83

    lm 458 ic

    Abstract: ba9l BA9101 BA9101B BA9101S speco qy70 8A910
    Text: BA9101/SA9101S BA91015 B A 9101/B A 9101B /B A 9t01S tt, S 9 9 * . 8 t r y h jE & J fc tfiffl A / D = ] > / < - £ 8—B it A /D C o nve rte r 7=S7-/G- * O U vl « f* a L fc 1 *7 7 8 ti7 •* = (*. * fc , T-'- The BA9101/BA9101 B/BA910tS are moflolilhlc ICa


    OCR Scan     		PDF BA9101/SA9101B BA91015 BA9101/BA9101B/BA9101SÂ BA9l01/8A9101B/BA910tS BA9101/BA9101B/BA9101S FB-218B BA9101 BA91018 BA9101S lm 458 ic ba9l BA9101B BA9101S speco qy70 8A910

    BA9101

    Abstract: No abstract text available
    Text: BA9101/BA9101B/BA9101S Bi ? a s a tm oooa^Qfl t b r h h jHIHzliHiffl I C / IC s for Industrial Equipment ROHM CO LTD 40E D B A 9 1 0 1 /SA 9 1 0 1 B BA9101S 8 t'-y hSÄJWSSä A/D 8-Bit A/D Converter T^si-io-o? • £Wf2’*}';&E3/D'mensior,s Unit : mm ? a 7 ?


    OCR Scan     		PDF BA9101/BA9101B/BA9101S BA9101S BA9101 BA9101B /BA9101B/BA9101S