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    TCPT 1200 Search Results

    TCPT 1200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN12006NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    CS1200 Coilcraft Inc Current Sense Transformer, 35A, 1:200 Visit Coilcraft Inc Buy
    CS1200L Coilcraft Inc Current Sense Transformer, 35A, 1:200, ROHS COMPLIANT Visit Coilcraft Inc Buy
    HPH5-1200LD Coilcraft Inc General Purpose Inductor, 173uH, 25%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT Visit Coilcraft Inc

    TCPT 1200 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TCPT1200 Vishay Intertechnology Subminiature Transmissive Optical Sensor with Phototransistor Output Original PDF
    TCPT1200X01 Vishay Telefunken Subminiature Transmissive Optical Sensor with Phototransistor Output Original PDF

    TCPT 1200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Opto-Sensor

    Abstract: TEMIC tcpt 1200 tcpt 1200 TCPT1200 mounting detector wheel mouse sensor Optical Mouse sensor TCPT1200 Transmissive Optical Sensors height sensor D-74025
    Text: July 97 TEMIC TELEFUNKEN Semiconductors Discrete Components Division Theresienstraße 2 POB 3535 D-74025 Heilbronn New Product Info Subminiature Transmissive Optical Sensors TCPT 1200 one channel TCUT 1200 ( two channels) The Application Accurate position sensor for encoder application and detection of motor direction.


    Original     		PDF D-74025 TCUT1200 TCPT1200 Opto-Sensor TEMIC tcpt 1200 tcpt 1200 TCPT1200 mounting detector wheel mouse sensor Optical Mouse sensor TCPT1200 Transmissive Optical Sensors height sensor

    MB642BT18TADG60

    Abstract: MB641BT18TADG60 MB641BT18TADG70 MB642BT18TADG70 MB644CT10TADG60 MB644CT10TADG70 EEE Std 404
    Text: Order this document by 3VEDOU64D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1, 2, 4M x 64 DRAM Dual-In-Line Memory Module DIMM 8, 16, and 32 Megabyte • JEDEC–Standard 168–Lead Dual–In–Line Memory Module (DIMM) 3.3 V, EDO, Unbuffered 1M x 64 (8MB), 2M x 64 (16MB)


    Original     		PDF 3VEDOU64D/D 1115C 8MB/16MB: 3VEDOU64D 3VEDOU64D/D* MB642BT18TADG60 MB641BT18TADG60 MB641BT18TADG70 MB642BT18TADG70 MB644CT10TADG60 MB644CT10TADG70 EEE Std 404

    UMT3F

    Abstract: vmn3 package EMT3F TSST8 rohm suffix "s" rohm Part No. Explanation rohm suffix "N" T100 T106 T110
    Text: Part No. Explanation MOSFET Part No. Explanation Tape code <Single-Chip Type> R T Q 0 Example: ROHM 3 5 P 2 T R Polarity ID Unit: 100mA 035= 3500mA(3.5A) N Nch P Pch Drive Voltage Drive Voltage (V) Type of MOSFET 1.2/1.5/1.8 2.5 4 − − C Low IGSS Type


    Original     		PDF 100mA) 3500mA R1010A UMT3F vmn3 package EMT3F TSST8 rohm suffix "s" rohm Part No. Explanation rohm suffix "N" T100 T106 T110

    HY5117400B

    Abstract: HY5117400 HYM536810CMG HY514100A HYM536810C HYM536810CM
    Text: HYM536810C M-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810C M-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


    Original     		PDF HYM536810C 8Mx36 8Mx36-bit HY5117400B HY514100A HYM536810CM HYM536810CMG 72-Pin HY5117400

    HY5117400B

    Abstract: HY514100A HYM536810D HYM536810DM HYM536810DMG
    Text: HYM536810D M-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810D M-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


    Original     		PDF HYM536810D 8Mx36 8Mx36-bit HY5117400B HY514100A HYM536810DM HYM536810DMG 72-Pin

    hy5118160b

    Abstract: WU33 HY5118160 D08-15 tcpt 200 HD-007 HY5118160BTC
    Text: •HYUNDAI H Y 5 1 1 8 1 6 0 B S e r ie s 1M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The H Y5118160B is the new generation and fast dynam ic RAM organized 1,048,576x 16-bit. The HY5118160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit Y5118160B 16-bit. HY5118160B ia069 1AD54-10-MAY95 HY5118160BJC HY5118160BSLJC WU33 HY5118160 D08-15 tcpt 200 HD-007 HY5118160BTC

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI H Y 5 1 1 8 1 6 0 S e r ie s 1M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5118160 16-bit. HY5118160 75Dfl 1AD15-10-MAY95 HY5118160JC HY5118160SLJC

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HY514264B Seies 256K X 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY514264B is the new generation and fast dynamic RAM organized 262,144x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access


    OCR Scan     		PDF HY514264B 16-bit 400mil 40pin 40/44pin 0DD42fl6 1AC29-10-MAY95

    Untitled

    Abstract: No abstract text available
    Text: HY51V4260B Series HYUNDAI 256Kx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve


    OCR Scan     		PDF HY51V4260B 256Kx 16-bit 400mil 40pin 40/44pin 0D04273

    Untitled

    Abstract: No abstract text available
    Text: HY «H Y U N D A I 5116160 Series 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5116160 16-bit. HY5116160 1AD11-10-MAY95 HY5116160JC HY5116160SLJC HY5116160TC

    phc51

    Abstract: A0317
    Text: HYUNDAI H Y 5 1 V 1 6 1 6 0 B S e r ie s 1 M x 16-bit CMOS DRAM with 2ÜÄ5 DESCRIPTION T he H Y51V 16160B is th e new generation and fa st dynam ic RAM organized 1,048,576 x 16-bit. The HY51V16160B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF 16-bit 16160B 16-bit. HY51V16160B 42/42pin D55-10-MA HY51V16160BJC 616CIBSIJC phc51 A0317

    BT 2313 M

    Abstract: Bt 2313 HY514264B HY514264 BSH15 hy514264bjc50 icshtibi BVOE 18 DCS15 npjt
    Text: HY514264B Seies HYUNDAI 256K X 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY514264B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access


    OCR Scan     		PDF HY514264B 16-bit HV514264B 400mil 40pin 40/44pin 1AC29-10-MA BT 2313 M Bt 2313 HY514264 BSH15 hy514264bjc50 icshtibi BVOE 18 DCS15 npjt

    Untitled

    Abstract: No abstract text available
    Text: HY514100B Series “H Y U N D A I 4M X 1- b it CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514100B 4L750Ã 000413b 1AC09-10-MA HY514100BJ HY514100BLJ

    Untitled

    Abstract: No abstract text available
    Text: • H Y U N D A I HY51V4400B Series 1M X 4-bit CMOS DRAM DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit.The HY51V4400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V4400B 0200J06) 1AC12-10-MAY95 HY51V4400BJ HY51V4400BLJ HY51V4400BSLJ

    rau2

    Abstract: 1A011
    Text: HY5116160 Series -HYUNDAI 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116160 16-bit 16-bit. Y5116160 1AD11-10-MAY95 HY5116160JC HY5116160SLJC rau2 1A011

    PST34

    Abstract: No abstract text available
    Text: H YU N D AI H Y 5 1 1 6 1 6 4 B S e r ie s 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5116164B 16-bit. 1ADS7-10-MAY95 HY5116164 HY5116164BTC PST34

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53216000AKG KMM53216000AKG Fast Page Mode 16Mx32 DRAM SIMM, 4K Refresh using 64M DRAM with 400mil G EN ER AL DESCRIPTIO N FEATURES The Samsung KMM53216000AKG is a 16M bit x 32 • Part Identification Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM53216000AKG KMM53216000AKG 16Mx32 400mil 16Mx4bit 32-pin 72-pin

    tlo7

    Abstract: IWR31
    Text: HY51V18160B Series •HYUNDAI 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY51V18160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF HY51V18160B 16-bit 16-bit. 1AD56-10-MAY95 HY51V18160BJC HY51V18160BSLJC tlo7 IWR31

    Ck37

    Abstract: No abstract text available
    Text: • « H Y U N D A I H Y 5 1 4 4 0 0 A S e r ie s 1 Mx 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400A families075 1AC07-30-MAY95 HY514400AJ HY514400ALJ HY514400AT 4400ALT Ck37

    Untitled

    Abstract: No abstract text available
    Text: HY514400B Series - H Y U N D A I 1Mx4-bit CMOS DRAM DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400B HY514400B 4b750flfl 1AC11-10-MAY95 HY514400BJ HY514400BLJ HV514400BSLJ

    RA5B

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332V803AS-L KMM332V803AS-L Fast Page Mode 8M x32 Based on 8Mx8, 4K Refresh, 3.3V, Low power/Self-Refresh G ENER AL DESCRIPTION FEATURES The Samsung KMM332V803A is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung KMM332V803A consists of four CMOS


    OCR Scan     		PDF KMM332V803AS-L KMM332V803AS-L KMM332V803A 32-pin 72-pin KMM332V803AS-L6/L7 cycles/128ms 60/70ns) RA5B

    DS12

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC23436 A-xxBS 12 /DS 12 4,194,304-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23436A-xxBS12/DS12 is a fully decoded 4,194,304-word x 36-bit CMOS Dynamic Random Access M emory M odule com posed of eight 16-Mb DRAMs 4M x 4 in SOJ packages


    OCR Scan     		PDF MSC23436A-xxBS 12/PS12 304-Word 36-Bit MSC23436A-xxBSl2/ 16-Mb 72-pin DS12

    Tra 1120 r

    Abstract: DU33
    Text: O K I Semiconductor M SC 23436A -xxB S 12 /P S 1 2 4,194,304-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23436A-xxBS12/DS12 is a fully decoded 4,194,304-word x 36-bitCMOS Dynamic Random Access Memory Module composed of eight 16-Mb DRAMs 4M x 4 in SO] packages


    OCR Scan     		PDF MSC23436A-xxBS 12/PS12 304-Word 36-Bit MSC23436A-xxBSl /DS12 16-Mb 72-pin Tra 1120 r DU33

    ca5J

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332V803AS-L KMM332V803AS-L Fast Page Mode 8Mx32 Based on 8Mx8, 4K Refresh, 3.3V, Low power/Self-Refresh G ENERAL DESCRIPTION FEATURES The Sam sung KM M 332V803A is a 8M bit x 32 Dynamic RAM high density memory module. The • Part Identification


    OCR Scan     		PDF KMM332V803AS-L KMM332V803AS-L 8Mx32 KMM332V803A 32-pin 72-pin KMM332V803AS-L6/L7 cycles/128ms ca5J