TSST8 Search Results

Contextual Info: TT8K2 Nch 30V 2.5A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 90mW ID 2.5A PD 1.25W lFeatures (8) TSST8 (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8).

Contextual Info: 1.5V Drive Pch +SBD MOSFET TT8U2 Dimensions Unit : mm Structure Silicon P-channel MOSFET / schottky barrier diode TSST8 Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance. 3) Low voltage drive(1.5V).

Contextual Info: Data Sheet 1.5V Drive Pch + Pch MOSFET TT8J13 Dimensions Unit : mm  Structure Silicon P-channel MOSFET TSST8 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive(1.5V drive). (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : J13

TSST8

Abstract: RT1E060
Contextual Info: Data Sheet 4V Drive Nch MOSFET RT1E060XN  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TSST8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8). (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : XR

TT8M3

Abstract: 100td
Contextual Info: 1.5V Drive Nch + Pch MOSFET TT8M3 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low On-state resistance. 2) Low voltage drive(1.5V). 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :M03

Contextual Info: 1.5V Drive Pch +SBD MOSFET TT8U1 Structure Silicon P-channel MOSFET / schottky barrier diode Dimensions Unit : mm TSST8 Features 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (1.5V) (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : U01

Contextual Info: 4V Drive Pch MOSFET TT8J2 Structure Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (4V) (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : J02 Applications Switching Each lead has same dimensions

Contextual Info: 1.5V Drive Pch +SBD MOSFET TT8U2 Structure Silicon P-channel MOSFET / schottky barrier diode Dimensions Unit : mm TSST8 Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance. 3) Low voltage drive(1.5V).

Contextual Info: RT1A060AP Pch -12V -6A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 19mW ID -6A PD 1.25W lFeatures (8) (7) TSST8 (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. Drain

Contextual Info: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : M02

Contextual Info: TT8K2 Nch 30V 2.5A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 90mW ID 2.5A PD 1.25W lFeatures (8) (7) TSST8 (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8).

Contextual Info: 1.5V Drive Pch +SBD MOSFET TT8U1 zStructure Silicon P-channel MOSFET / schottky barrier diode zDimensions Unit : mm TSST8 zFeatures 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (1.5V) (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : U01

tt8k2

Contextual Info: TT8K2 Datasheet Nch 30V 2.5A Power MOSFET lOutline VDSS 30V RDS on (Max.) 90mW ID 2.5A PD 1.25W lFeatures (8) (7) TSST8 (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8).

Contextual Info: RT1A045AP Datasheet Pch -12V -4.5A Power MOSFET lOutline VDSS -12V RDS on (Max.) 30mW ID -4.5A PD 1.25W lFeatures (8) TSST8 (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8).

Contextual Info: 1.5V Drive Pch+Pch MOSFET TT8J21 zDimensions Unit : mm zStructure Silicon P-channel MOSFET TSST8 zFeatures 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (1.5 V) (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : J21 zApplications Switching

RT1A060AP

Contextual Info: Data Sheet 1.5V Drive Pch MOSFET RT1A060AP  Structure Silicon P-channel MOSFET  Dimensions Unit : mm TSST8 Features 1) Low on-resistance. 2) Low voltage drive (1.5V drive). 3) Small surface mount package (TSST8). (8) (7) (6) (5) (1) (2) (3) (4)

TSST8

Contextual Info: Data Sheet 4V Drive Nch + Nch MOSFET TT8K11  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TSST8 Features 1) Low on-resistance. 2) Low voltage drive(4V drive). 3) Small surface mount package(TSST8). (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : K11

Contextual Info: Data Sheet 1.5V Drive Pch +SBD MOSFET TT8U2  Structure Silicon P-channel MOSFET / schottky barrier diode Dimensions Unit : mm TSST8  Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance.

tt8m11

Contextual Info: Data Sheet 4V Drive Nch + Pch MOSFET TT8M11  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low on-resistance. 2) Low voltage drive(4V drive). 3) Small surface mount package(TSST8). (8) (7) (6)

Contextual Info: RT1A045AP Datasheet Pch -12V -4.5A Power MOSFET Outline VDSS 12V RDS on (Max.) 30m ID 4.5A PD 1.25W Features (8) TSST8 (7) (6) (5) (1) (2) (3) (4) Inner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8).

Contextual Info: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 zStructure Silicon N-channel MOSFET/ Silicon P-channel MOSFET zDimensions Unit : mm TSST8 zFeatures 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4)

Contextual Info: TT8J21 Pch -20V -2.5A Power MOSFET Datasheet lOutline VDSS -20V RDS on (Max.) 68mW ID -2.5A PD 1.25W lFeatures (8) (7) TSST8 (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSST8).

Contextual Info: RT1C060UN Datasheet Nch 20V 6A Power MOSFET lOutline VDSS 20V RDS on (Max.) 28mW ID 6A PD 1.25W lFeatures (8) TSST8 (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8).

charge controller 12V

Contextual Info: 1.5V Drive Pch MOSFET RT1A040ZP zDimensions Unit : mm zStructure Silicon P-channel MOSFET TSST8 zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : YE Each lead has same dimensions