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    TC531000 Search Results

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    TC531000 Price and Stock

    Toshiba America Electronic Components TC531000P

    IC,ROM,128KX8,CMOS,DIP,28PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC531000P 97
    • 1 $15
    • 10 $15
    • 100 $6
    • 1000 $6
    • 10000 $6
    		Buy Now
    TC531000P 31
    • 1 $15
    • 10 $10
    • 100 $9.25
    • 1000 $9.25
    • 10000 $9.25
    		Buy Now
    TC531000P 10
    • 1 $21.0164
    • 10 $18.6812
    • 100 $18.6812
    • 1000 $18.6812
    • 10000 $18.6812
    		Buy Now

    Toshiba America Electronic Components TC531000AP-F709

    531000AP-F709
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC531000AP-F709 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Toshiba America Electronic Components TC531000AP-F711

    531000AP-F711
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC531000AP-F711 1
    • 1 -
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    TC531000 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC531000AF Toshiba Vintage Memory Datasheet Scan PDF
    TC531000AP Toshiba Vintage Memory Datasheet Scan PDF
    TC531000CF Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0071 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0072 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0073 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0074 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0082 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0083 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0084 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0088 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0089 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0090 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0093 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0094 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0095 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0097 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0098 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0099 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-12 Toshiba 1M BIT (128K WORD x 8 BIT) CMOS MASK ROM SILICON GATE CMOS Scan PDF

    TC531000 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TC531000

    Abstract: 531000CP TC531000C
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC531000CP/CF-12,-15 1M BIT 128K W O R D x 8 BIT C O M S M A S K RO M DESCRIPTIO N T h e T C 5 3 1 0 0 0 C P /C F is a 1, 048, 576 b its re a d only m em ory o rgan ized a s 131, 072 w ords b y 8 b its


    OCR Scan     		TC531000CP/CF-12 TC531000CP/CF 150ns A0-A16 A0-A15 TC531000 531000CP TC531000C PDF

    TC531000

    Abstract: tc531000cp DIP23-P-60
    Text: iÂ^ÉftÂâfÂÂ WWWmmW0Wm 1M EIT 128K WORD x 3 BIT CMOS MASK ROM SILICON GATE CMOS DESCRIPTION The TC531000CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program memory of micro­


    OCR Scan     		TC531000CP/TC531000CF TC531000CP/CF 120ns 150ns TC531OOOCP/CF--12/15 DIP23-P-600) TC531000 tc531000cp DIP23-P-60 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC531000CP-12/15 TC531000CF-12/15 SILICON STACKED GATE CMOS 131,072 WORD x 8 BIT CMOS M ASK ROM Description The T C 5 3 1 0 0 0 C P / C F is a 1,048,576 bit read only m emory organized a s 131,072 w ords by 8 bits. A low bit cost m akes it suitable


    OCR Scan     		TC531000CP-12/15 TC531000CF-12/15 TC531OOOCP-12/15, PDF

    ci 4070

    Abstract: Otis technology
    Text: m m m m mmsrnmimsm . 8ÄSI .„¡m R l P  IBi? f f ! ïi ll ll ll ll lÄiliiÄiÄÄliiftÄ m ß WÊS ijj|j| ISS«!11 g ¡Ssii itiWiii j&$RÌl$ÌÌÉ IM EIT (128K WORD x 3 BIT CMOS MA SK ROM S I LICON GATE CMOS DESCRIPTION The TC531000CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8


    OCR Scan     		TC531000CP/CF TC531000CP/CT' 120ns 150nsOutput TC531OOOCP/CF-12/15 DIP23-P-600) ci 4070 Otis technology PDF

    TC531000cp

    Abstract: TC531000CF a2c8 DOC11
    Text: 1M EIT 128K WORD x 8 BIT CMOS MASK ROM SILICON GATE CMOS DESCRIPTION The TC531000CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program memory of micro­ processor, especially character generator.


    OCR Scan     		TC531000CP/CF TC531000CP/CP 120ns 150ns TC531OOOCP-- TC531OOOCP TC531000cp TC531000CF a2c8 DOC11 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464 PDF

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000 PDF

    2SKI34

    Abstract: TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576
    Text: [CATALOG 5VSTEMCATALOG SV5TEMCATALOG 5V5TEM CATALOG 5VSTEM C K T Q S rG A m .ro H IB f lp T E M CATALOG SV5TEM CATALOG 5VSTEM CATALOG S t 5 v llfflC A T A L O G SVSTEMCATALOG SVSTEMCATALOG SVSTEM CA SVSTEM CATALOG SVSTEM CATALOG 5V 5TE M CATALOG SVSTEM CATALOG S t


    OCR Scan     		J22587 90-3D 2SKI34 TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576 PDF

    TC571000D-15

    Abstract: TC5710000-15 TC571001D-15 571000D TC531000P TC5710010-15 TC571000D tc571001d h102 d1 tc5710000
    Text: TOSHIBA MOS MEMORY PRODUCTS T C 5 710 0 0 D -15 , -20, -200, -25 T C 5 71 0 0 1D -15 , -20, -200, -25 IDESCRIPTIONI The TC571000D/TC571001D is a 131,072 word * 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. The TC571000D is JEDEC standard pin configuration and the TC571001D is compatible with


    OCR Scan     		TC571000D/TC571001D TC571000D TC571001D 30mA/6 150ns/200ns/250ns. TC571000D/TC571001D. TC571001D TC571000D-15 TC5710000-15 TC571001D-15 571000D TC531000P TC5710010-15 h102 d1 tc5710000 PDF

    af15 cc hen vd

    Abstract: TC531000 571001
    Text: TOSHIBA TC541000AP/AF-12, -15 TC541001AP/AF-12, -15 SILICON STACKED GATE CMOS 131,072 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY Description The T C 5 4 1 0 0 0 A P /A F an d th e T C 5 4 1 0 0 1 A P /A F are 1 3 1 ,0 7 2 w o rd x 8 b it C M O S on e tim e p ro g ra m m a b le read only m em ories


    OCR Scan     		TC541000AP/AF-12, TC541001AP/AF-12, TC541000AP/AF af15 cc hen vd TC531000 571001 PDF

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A PDF

    CX20106A

    Abstract: GL7805 GL386 GL1150 GL7809 GL317 GLC556 LA7830 GL1151 GL3401
    Text: TABELA DE EQUIVALÊNCIAS SEMICONDUTORES GOLDSTAR formerly hosted by http://www.robvendas.hpg.ig.com.br/APOST/GOLD.HTM 1 of 6 G53 GAS105 LAG553-2 2SB463 - - 2SB474 GD75188 GD75189 DS1488 DS1489 SN75188 SN75189 GE4 GE1012 48-124376 MOC3012 - - GE3009 GE3010


    Original     		GAS105 2SB474 GD75188 GD75189 DS1488 DS1489 SN75188 SN75189 GE1012 MOC3012 CX20106A GL7805 GL386 GL1150 GL7809 GL317 GLC556 LA7830 GL1151 GL3401 PDF

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 PDF

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


    OCR Scan     		KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v PDF

    triac tag 8518

    Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
    Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference


    OCR Scan     		PDF

    TCS4H

    Abstract: TC531000 tc531000p TC54H1000AP/AF-85
    Text: TC54H1OOOAP/AF-85, -10 TC54H1001 AP/AF-85,-10 M0S 131,072 W O R D x 8 BIT C M O S O N E T IM E P R O G R A M M A B L E READ O N LY M E M O R Y D ESCRIPTIO N The TC 54H 1000A P / A F and TC54H 1001A P / A F a re a 131,072 w o rd X 8 b it om e tim e p ro g ra m m a b le r e a d o n ly m e m o ry a n d m o ld e d in a 32 p in p la s tic p a c k a g e .


    OCR Scan     		TC54H1OOOAP/AF-85, TC54H1001 AP/AF-85 TC54H TC54H1000AP/A TCS4H TC531000 tc531000p TC54H1000AP/AF-85 PDF

    tc531000p

    Abstract: TC531000 tc8410 TC541000F
    Text: TC541OOOP/F-15, TC541000P/F-20 TC541001P/F-15, TC541001P/F-20 131,072 W O R D x 8 BIT CMOS ONE TIM E PROGRAMMABLE READ ONLY M E M O R Y PRELIMINARY DESCRIPTION The TCB41000P/F and TCB41001P/F are a 131,072 word x 8 bit one time programmable read only memory and molded in a 32 pin plastic package.


    OCR Scan     		TC541OOOP/F-15, TC541000P/F-20 TC541001P/F-15, TC541001P/F-20 TCB41000P/F TCB41001P/F 180ns/200ns TCB71000D/TC571001D tc531000p TC531000 tc8410 TC541000F PDF

    TC531000P

    Abstract: TC541000J TC531000
    Text: 131,072 WORD x 8 BIT CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY PRELIMINARY DESCRIPTION The TC541000J/TC541001J is a 131,072 word * 8 bit one time programmable read only memory, and molded in a 32 pin plastic package. The TC541000J/TC541001J&#39;s access time is 150ns/200ns a n d h a s low p o w e r


    OCR Scan     		TC541000J/TC541001J 150ns/200ns TC571000D/TC571001D TC541000J/TC541001J. TC541000J TC541001J TC541OOOJ-15, TC541000J-20 TC531000P TC531000 PDF

    TC541000AP

    Abstract: No abstract text available
    Text: i;h • 131,072 W O R D x 8 BIT C M O S O N E T IM E P R O G R A M M A B L E R EA D O N LY M E M O R Y DESCRIPTIO N The TC541000AP I AF and TC641001AP / AF are a 131,072 word X 8 b it ome time programmable read only memory and molded in a 32 pin plastic package.


    OCR Scan     		TC541000AP TC641001AP TC541001AP 120ns/150ns TC571000AD/TC571001AD TC541 TC541001AP/AF PDF

    GI9332

    Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
    Text: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8


    Original     		MB83256 MB83512 MB831000 MB832000 MB834100 MB834000 MB834200 27C1024H 27C101A 27C301A GI9332 mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000 PDF

    TC5816FT

    Abstract: TC5332410F TC5316200CP TC531621 TC5310
    Text: CMOS Flash E2PROM Capacity 1MBit flash X6 Max. Power Dissipation mW Power Supply Max. Accès» Organization Time(ns) V p p (V) Voc(V) Typ» No. Wiita/Erase Standby Read Operating Write/Erase Temperature Method 600mil DIP •TC58F010F-10, 12 525mil SOP •TC58F010FT10, 12


    OCR Scan     		TC58F010P-10, 600mil 525mil TC58F010F-10, TC58F010FT10, TC58F010TR-10, TC58F010T-10, TC58F4000P-12, TC58F4000F-12, 450mi! TC5816FT TC5332410F TC5316200CP TC531621 TC5310 PDF

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258


    OCR Scan     		KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference PDF