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    TC5116 Price and Stock

    Toshiba America Electronic Components TC511664BZ-10

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    Bristol Electronics TC511664BZ-10 590 1
    • 1 $10.5
    • 10 $7.875
    • 100 $6.3
    • 1000 $6.0375
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    Quest Components TC511664BZ-10 472
    • 1 $14
    • 10 $14
    • 100 $14
    • 1000 $8.05
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    TC511664BZ-10 80
    • 1 $16.3071
    • 10 $16.3071
    • 100 $12.6833
    • 1000 $12.6833
    • 10000 $12.6833
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    Toshiba America Electronic Components TC511664BJ-80

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    Bristol Electronics TC511664BJ-80 248
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    TC511664BJ-80 43
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    Quest Components TC511664BJ-80 1,820
    • 1 $5.472
    • 10 $5.472
    • 100 $5.472
    • 1000 $2.736
    • 10000 $2.736
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    TC511664BJ-80 798
    • 1 $4.56
    • 10 $4.56
    • 100 $4.56
    • 1000 $2.28
    • 10000 $2.28
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    TC511664BJ-80 17
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    Toshiba America Electronic Components TC511664J-10

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    Bristol Electronics TC511664J-10 233
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    Toshiba America Electronic Components TC5116400CST-60

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    Bristol Electronics TC5116400CST-60 155
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    Toshiba America Electronic Components TC5116400BSJ-60

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    Bristol Electronics TC5116400BSJ-60 89
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    Find more TC5116 price and stock on Findchips.com

    TC5116 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    TC5116160 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    TC5116400 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    TC5116400BSJ Toshiba 4194304 word x 4 Bit Dynamic Ram Scan PDF
    TC5116400J Toshiba 4194304 word x 4 Bit Dynamic Ram Scan PDF
    TC511664B Toshiba 65536 word x 16 bit DRAM Scan PDF
    TC511664BJ-10 Toshiba 65536 WORD x 16-Bit DYNAMIC RAM Scan PDF
    TC511664BJ-80 Toshiba 65536 WORD x 16-Bit DYNAMIC RAM Scan PDF
    TC511664BZ-10 Toshiba 65,536 WORD x 16 BIT DYNAMIC RAM Scan PDF
    TC511664BZ-80 Toshiba 65,536 WORD x 16 BIT DYNAMIC RAM Scan PDF

    TC5116 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tc5118165bj

    Abstract: TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400
    Text: TOSHIBA TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO DYNAMIC RAM Description The TC5116405BSJ/BST is the Hyper Page Mode (EDO) dynamic RAM organized as 4,194,304 words by 4 bits. The TC5116405BSJ/BST utilizes Toshiba’s CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide


    Original     		PDF TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 TC5116405BSJ/BST 300mil) cycles/64ms TC51V16325BJ: SOJ70-P-400A tc5118165bj TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400

    TC511632

    Abstract: TC511632FL
    Text: TOSHIBA TC511632FL/FTL-70/85/10 PRELIMINARY SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 1632FL7FTL is a 5 1 2K b t high speed C M O S p s e u d o static RAM organized as 3 2 ,7 6 8 w o rd s by 16 bits. The T C 511632FL7F TL utilizes a o n e tra n s is to r dyn a m ic m e m o ry cell w ith C M O S peripheral circuitry to p rovide high capacity, high


    OCR Scan     		PDF TC511632FL/FTL-70/85/10 1632FL7FTL 511632FL7F 1632FLVFTL TC511632 TC511632FL

    TC5116160

    Abstract: A461
    Text: T O S H IB A TC5116160AI/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynam ic RAM organized 1,048,576 w ord by 16 bit. The TC5116160AJ/AFT utilizes T oshiba's CM OS silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC5116160AI/AFT-60/70/80 TC5116160AJ/AFT TC51161610AJ/AFT-60/70/80 A8R--A11R TC5U6160AJ/AFT-60/70/80 TC5116160 A461

    TCFT 1103

    Abstract: TC5116400J A173 TC511640J A10RC TCWU
    Text: TOSHIBA TC5116400J/FT -60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5116400J/FT is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400J/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC5116400J/FT-60/70 TC5116400J/FT TC5116400J/FT. 1M516DRAM. TCFT 1103 TC5116400J A173 TC511640J A10RC TCWU

    BST60

    Abstract: No abstract text available
    Text: TOSHIBA TC5U6400BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF TC5U6400BSJ/BST-60/70 TC5116400BSJ/BST 300mil) BST60

    TC5116400FT

    Abstract: No abstract text available
    Text: TOSHIBA TC5116400J/FT -60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5116400J/FT is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400J/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC5116400J/FT TC5116400J/FT. 1M516DRAM. TC5116400FT

    SK 3002

    Abstract: No abstract text available
    Text: TOSHIBA TC5116165CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5116165CJ/CFT is an EDO (hyper page) dynamic RAM organized as 1,048,576 words by 16 bits. The TC5116165CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as


    OCR Scan     		PDF TC5116165CJ/CFT-50 576-WORD 16-BIT TC5116165CJ/CFT 42-pin 6165CJ/CFT-50 SOJ42-P-400-1 SK 3002

    TC511665

    Abstract: TC511665BZ TC511665BJ ZIP40 TC5116
    Text: T C 5 1 1 6 6 5 B J /B Z - 8 0 . T C 5 1 1 T E N T A T IV E D A T A 6 5 ,5 3 6 W O R D x 16 B IT D Y N A M IC R A M D E SC R IP TIO N The TC511665BJ/BZ is the new generation dynamic KAM organized 65,536 words by 16 bits. _ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC511665BJ/BZ TC511665 TC511665BZ TC511665BJ ZIP40 TC5116

    TC5116160

    Abstract: AI05a CFT50
    Text: TOSHIBA TC5116160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5116160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC5116160CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as advanced


    OCR Scan     		PDF TC5116160CJ/CFT-50 576-WORD 16-BIT TC5116160CJ/CFT SOJ42-P-400-1 TC5116160 AI05a CFT50

    Untitled

    Abstract: No abstract text available
    Text: T EN TA TIV E D A TA 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTION The TC511665BJ/BZ is the new generation dynamic RAM organized 65,536 words by 16 bits. ^ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC511665BJ/BZ

    Untitled

    Abstract: No abstract text available
    Text: ^ e m Z M Ö 00EÖSÖ3 444 TOSHIBA TC5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM u> "c s Description TheTC 5116100BS J is the new generation dynamic RAM organized 16,777,216 word by 1 bit. TheTC 5116100BS J utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


    OCR Scan     		PDF TC5116100BSJ-60/70 5116100BS 51161OOBSJ 300mil)

    BST60

    Abstract: No abstract text available
    Text: TOSHIBA TC5116400BSJ/BST-6Q/70 MOS DIGITAL INTEGRATED CIRCUIT PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both


    OCR Scan     		PDF TC5116400BSJ/BST-6Q/70 TC5116400BSJ/BST 300mil) DR16020794 0027bl3 TC5116400BSJ/BST-60/70 BST60

    Untitled

    Abstract: No abstract text available
    Text: -60/70 8,388,608 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3680A0 is a 8,388,608 word by 36 bit dynamic RAM module which is assembled with 18 TC5116400J devices on the printed circuit board. This module is optimized for applications which require high


    OCR Scan     		PDF ----------------------------THM3680A0S/SG THM3680A0 TC5116400J 555mW THMxxxxxx-60) 059mW THMxxxxxx-70) TCH724fl C-101 THM3680A0S/SG

    A11RC

    Abstract: No abstract text available
    Text: TOSHIBA TC5116160AJ/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 16 bit. The TC5116160AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC5116160AJ/AFT-60/70/80 TC5116160AJ/AFT 00B5777 0D2577Ã TC51161610AJ/AFT-60/70/80 0Q25771 TC5116160AÃ A11RC

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THM3640A0S/SG -60/70 4,194,304 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM 3640A0 is a 4,194,304 word by 36 bit dynamic RAM m odule which is assem bled with 9 TC5116400J devices on the printed circuit board. This m odule is optim ized for applications which require high


    OCR Scan     		PDF THM3640A0S/SG 3640A0 TC5116400J xxxxxx-60) xxxxxx-70) THM3640A0S/5G THM3640A0S/SG

    BST60

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5116405BSJ/BST-60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116405BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5116405BSJ/BST uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


    OCR Scan     		PDF TC5116405BSJ/BST-60 TC5116405BSJ/BST 300mil) DR16060295 SOJ26-P-300C) BST60

    TC511664

    Abstract: No abstract text available
    Text: I N T E G R A T E D CIRCUIT TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT T C511664J / Z - 8 0 , TC511664J / Z -10 TECHNICAL DATA SILICON GATE CMOS 65,536 W O R D X 16 BIT D Y N A M IC R A M * This is advanced information and specifica­ tions are subject to change without notice.


    OCR Scan     		PDF C511664J TC511664J TC511664J/Z TC5116G4J/Z 100mA 400mil 40pln 47Smlt TCS11884Z TC511664

    Untitled

    Abstract: No abstract text available
    Text: 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTIO N The TC511664J/Z is th e new generation dynam ic RAM organized 65,536 words by 16 bits. The TC51 1664J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced circuit tech n iq u es to provide wide operating m argins, both in te rn a lly and to the system user. M ultiplexed


    OCR Scan     		PDF TC511664J/Z 1664J/Z

    CST A 200

    Abstract: 5116405 TC5116405
    Text: IN T EG R A T ED TOSHIBA T O S H I B A M O S D I G I T A L I N T E G R A T E D CIRCUI T TC5116405 CSJ /CST-40 TC5116405 CSJ / CST - 50 TC5116405 C S J/ C ST -60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 WORD x4 BIT EDO HYPER PAGE DYNAMIC RAM


    OCR Scan     		PDF TC5116405 /CST-40 TC5116405CSJ/CST 300mil) CST A 200 5116405

    tc511664jl

    Abstract: TC516
    Text: TC51 6 5 ,5 3 6 W ORD X 16 BIT DYNAMIC RAM * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC511664JL/ZL is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511664JL/ZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC511664JL/ZL TC511S64JL/ZL tc511664jl TC516

    thm3640

    Abstract: No abstract text available
    Text: TOSHIBA THM3640A0S/SG -60/70 4,194,304 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3640A0 is a 4,194,304 word by 36 bit dynamic RAM module which is assembled with 9 TC5116400J devices on the printed circuit board. This module is optimized for applications which require high


    OCR Scan     		PDF THM3640A0S/SG THM3640A0 TC5116400J 130ns 455mW THMxxxxxx-60) 960mW THMxxxxxx-70) DQO-35) thm3640

    csr bc4

    Abstract: TC5116400BSJ BST60
    Text: TOSHIBA m C|C]t:,724fl QD2fl2Ci;L 510 • -TC5116400BSJ/BSTW70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. TC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF 724fl TC5116400BSJ/BSTW70 TC5116400BSJ/BST 300mil) csr bc4 TC5116400BSJ BST60

    intel 82c51

    Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
    Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160


    OCR Scan     		PDF 51V16100 51V16160 51V16400 51V17100 51V17400 51V18160 TC5116160A TC5116800A TC5117800A uPD4216100 intel 82c51 Mitsubishi 82c54 intel p8085a PD8155H nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288

    BST60

    Abstract: No abstract text available
    Text: TOSHIBA TC5116405BSJ/BST60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The T C 51 16405BSJ/BST is the new generation dynamic RAM organized 4,194,304 w ord by 4 bits. The T C 51 16405B SJ/ BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat­


    OCR Scan     		PDF TC5116405BSJ/BST60 16405BSJ/BST 16405B TC5116405BSJ/BST 300mil) TC5116405BS J/BST-60 DR16060295 BST60