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    TA96 Price and Stock

    Central Semiconductor Corp CMPTA96-TR-PBFREE

    TRANS PNP 450V 0.5A SOT-23
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    DigiKey CMPTA96-TR-PBFREE Cut Tape 9,842 1
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    Littelfuse Inc IXTA96P085T-TRL

    MOSFET P-CH 85V 96A TO263
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    DigiKey IXTA96P085T-TRL Cut Tape 7,685 1
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    IXTA96P085T-TRL Digi-Reel 7,685 1
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    IXTA96P085T-TRL Reel 800
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    Littelfuse Inc IXTA96P085T

    MOSFET P-CH 85V 96A TO263
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    DigiKey IXTA96P085T Tube 6,366 1
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    RS IXTA96P085T Bulk 8 Weeks 50
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    CoreStaff Co Ltd IXTA96P085T 200
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    IXTA96P085T 70
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    onsemi PZTA96ST1G

    TRANS PNP 450V 0.5A SOT223
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    DigiKey PZTA96ST1G Cut Tape 2,978 1
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    Avnet Americas PZTA96ST1G Reel 14 Weeks 5,000
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    Mouser Electronics PZTA96ST1G 43,810
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    PZTA96ST1G Reel 2,000
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    Component Electronics, Inc PZTA96ST1G 10
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    onsemi PZTA96ST1

    TRANS PNP 450V 0.5A SOT223
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    TA96 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TA96 EATON SWITCH ACCESS PUSH BUTTON PADLOCK ATTACHMENT FOR STOP BUTTON Original PDF

    TA96 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DF378F

    Abstract: DF103B HRP2540 NR231A single phase full controlled rectifier component list
    Text: HRP2540 December 2001 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device was designed for use as the output rectifier in the three


    Original     		HRP2540 TA9673) DF378F DF103B HRP2540 NR231A single phase full controlled rectifier component list PDF

    Untitled

    Abstract: No abstract text available
    Text: HRP2540 S em iconductor April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device


    OCR Scan     		HRP2540 TA9673) O-22QAB 1-25OC/W NR231A DF103B DF378F 09kgf PDF

    NR231A

    Abstract: DF378F DF103B single phase full controlled rectifier component list HRP2540
    Text: HRP2540 April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device


    Original     		HRP2540 TA9673) NR231A DF378F DF103B single phase full controlled rectifier component list HRP2540 PDF

    IRF620 application

    Abstract: TA9600 IRF620 TB334 transistor irf620
    Text: IRF620 Data Sheet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 5.0A, 200V Formerly developmental type TA9600. Ordering Information PACKAGE 1577.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		IRF620 TA9600. IRF620 application TA9600 IRF620 TB334 transistor irf620 PDF

    DF103B

    Abstract: DF378F NR231A alternator rectifier rectifier three phase 40a HRP2540 single phase half controlled rectifier
    Text: HRP2540 April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device


    Original     		HRP2540 TA9673) O-220AB 25oC/W NR231A DF103B DF378F 09kgf DF103B DF378F NR231A alternator rectifier rectifier three phase 40a HRP2540 single phase half controlled rectifier PDF

    DF378F

    Abstract: DF103B HRP2540 NR231A
    Text: HRP2540 April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device


    Original     		HRP2540 TA9673) O-220AB 25oC/W NR231A DF103B DF378F 09kgf DF378F DF103B HRP2540 NR231A PDF

    Tektronix 2245a

    Abstract: 2M3866 s2 umi 250v 1a Tektronix 2246a s 2 umi 1A 130 degree 250V 2N2369 transistor pulse generator PNP TRANSISTOR 1A 60V s 2 umi 1A 250V LARE RTL 1000 AVS Ralph Morrison Wiley
    Text: um A pplication Note 47 August 1991 TECHNOLOGY High Speed Amplifier Techniques A Designer's Companion for W ideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note


    OCR Scan     		AN47-131 AN47-132 Tektronix 2245a 2M3866 s2 umi 250v 1a Tektronix 2246a s 2 umi 1A 130 degree 250V 2N2369 transistor pulse generator PNP TRANSISTOR 1A 60V s 2 umi 1A 250V LARE RTL 1000 AVS Ralph Morrison Wiley PDF

    DS96173

    Abstract: DS96175 DS96176 RS-422A DS96178
    Text: NATL SEMICOND {MEMORY} IDE D | b 5 □ 112 b Q G b E 4 L cî 3 | O to CO T -7 5 -4 5 -0 5 National Semiconductor 0> CO 1= > <o o> •Nj DS96173 / ¡x A 96173/D S 96175/ tA96175 RS-485/RS-422 Quad Differential Line Receivers General Description Features The DS96173/jiA96173 and DS96175/ iiA96175 are high


    OCR Scan     		T-75-45-05 DS96173/Â A96173/DS96175/ A96175 RS-485/RS-422 DS96173/jiA96173 DS96175/ iiA96175 RS-485. DS96173//xA96173 DS96173 DS96175 DS96176 RS-422A DS96178 PDF

    f25n06l

    Abstract: F25N06 RFP2506L RFP25N06L an7254 TA9638
    Text: Logic-Level Power MOSFETs RFP25N06L File Number 2044 N-Cnannel Logic Level Power Field-Effect Transistors L2FET 25 A, 50 V - 60 V rDs(on) = 0.085 O Features: N-CHANNEL ENHANCEMENT MODE • Design optim ized fo r 5 volt gate drive ■ Can be driven directly from Q-MOS,


    OCR Scan     		RFP25N06L RFP25N06L* CATOFP25N0GLCF2 92CS-37075 AN7254 AN7260. f25n06l F25N06 RFP2506L RFP25N06L TA9638 PDF

    germanium

    Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
    Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014


    OCR Scan     		I815/KTN 10I5/KTP 1923/KTN 380TM/KTN germanium kia 7208 KIA 7313 germanium transistor speaker protector PDF

    MA96177

    Abstract: uA96177 A96177 RS-422A A96176 41sv
    Text: /uA9 6 1 7 7 • juA9 6 1 7 8 F A IR C H IL D Differential Bus Repeaters A Schlum berger C om pany Linear Division Interface Products Description Connection Diagram 8-Lead DIP Top View The (¿A96177 and fiA 9 6 1 78 Differential Bus Repeaters are m onolithic integrated devices each designed for one-way


    OCR Scan     		/uA96177 juA96178 A96177 fiA96178 RS-485 RS-422A. /A96177 iA96178 fiA96177 MA96177 uA96177 RS-422A A96176 41sv PDF

    Untitled

    Abstract: No abstract text available
    Text: w vys S IRFF220, IRFF221, IRFF222, IRFF223 S e m ico n d ucto r y y 3.0A and 3.5A, 150V to 200V, 0.8 and 1.2 Ohm, N-Channei Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 150V to 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		IRFF220, IRFF221, IRFF222, IRFF223 PDF

    Untitled

    Abstract: No abstract text available
    Text: ASSESS? RURG3010CC, RURG3015CC, RURG3020CC Aprii 1995 30A, 100V - 200V Ultrafast Dual Diodes Features Package • Ultrafast with Soft Recovery . <45ns • Operating Temperature. . . . +175°C • Reverse Voltage Up to . . ,200V JEDEC STYLE TO-247 ANODE 1


    OCR Scan     		RURG3010CC, RURG3015CC, RURG3020CC O-247 URG3015CC TA9645) VFTR9645 1RTR9645 PDF

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 RFR220, PDF

    DF378F

    Abstract: DF103B NR231A rectifier three phase 40a alternator exploded view power circuit of three phase control rectifier HRP2540 washer lock Transient Voltage Suppression Devices, Harris
    Text: HRP2540 S E M I C O N D U C T O R Power Rectifier/Power Surge Suppressor April 1995 Features Package • Low Forward Voltage Drop 1.1V Max at 100A JEDEC TO-220AB A • High Reverse Energy Capability K A • Controlled Maximum Avalanche Voltage (40V Max at 40A)


    Original     		HRP2540 O-220AB TA9673) 25oC/W NR231A DF103B DF378F 09kgf DF378F DF103B NR231A rectifier three phase 40a alternator exploded view power circuit of three phase control rectifier HRP2540 washer lock Transient Voltage Suppression Devices, Harris PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF620 Semiconductor D ata S h eet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET 1577.3 Features • 5.0A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		IRF620 PDF

    ta66

    Abstract: uA733 an47fa Ferronics 21-110J 2n2369 avalanche lt1150 Tektronix P6056 linear technology an47 AN-4745 NE592
    Text: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.


    Original     		LTAN47 AN47-129 AN47-130 AN47-131 AN47-132 an47fa ta66 uA733 Ferronics 21-110J 2n2369 avalanche lt1150 Tektronix P6056 linear technology an47 AN-4745 NE592 PDF

    ifr220

    Abstract: IFU220 IRFU221 IRFU222 ifu221 IRFR222 IFR221 ta96 IRFR220 irfu220
    Text: IRFR220, IRFR221, IRFR222, IRFU220, IR FU221, IRFU222 H A R R IS SEMICONDUCTOR 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V These are N-Channel enhancement mode silicon gate


    OCR Scan     		IRFR220, IRFR221, IRFR222, IRFU220, FU221, IRFU222 RFR220, RFR221, RFR222, ifr220 IFU220 IRFU221 IRFU222 ifu221 IRFR222 IFR221 ta96 IRFR220 irfu220 PDF

    SN75100

    Abstract: SN75100L CT070
    Text: SYSTEMS INTERFACE CIRCUITS TYPE SN75100L DUAL DIFFERENTIAL LINE RECEIVER S E R IE S 75 L IN E R E C E IV E R featuring High Input Impedance Fast Switching Speed Good Small-Signal Sensitivity T T L and D T L Compatible Outputs W ire-OR Output Capability description


    OCR Scan     		SN75100L SN75100L SN75100 CT070 PDF

    IRFF220

    Abstract: TA9600 TB334
    Text: IRFF220 Data Sheet January 2002 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 3.5A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFF220 IRFF220 TA9600 TB334 PDF

    transistor irf620

    Abstract: No abstract text available
    Text: IRF620 Data Sheet Title F62 bt 0A, 0V, 00 m, June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRF620 TB334 IRF620 transistor irf620 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFF220 Data Sheet Title FF2 bt 5A, 0V, 00 m, March 1999 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFF220 PDF

    IRF620

    Abstract: IRF621 TB334 IRF620 HARRIS IFR622 IFR623 IRF622 IRF623 TA9600 IRF623 harris
    Text: IRF620, IRF621, IRF622, IRF623 S E M I C O N D U C T O R 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF620, IRF621, IRF622, IRF623 IRF620 IRF621 TB334 IRF620 HARRIS IFR622 IFR623 IRF622 IRF623 TA9600 IRF623 harris PDF

    ifr220

    Abstract: IFU220 JEDEC TO-251AA IRFR220 IRFU220 TA9600 TB334
    Text: IRFR220, IRFU220 Data Sheet 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		IRFR220, IRFU220 TA9600. ifr220 IFU220 JEDEC TO-251AA IRFR220 IRFU220 TA9600 TB334 PDF