ifr220
Abstract: IFU220 JEDEC TO-251AA IRFR220 IRFU220 TA9600 TB334
Text: IRFR220, IRFU220 Data Sheet 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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Original
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IRFR220,
IRFU220
TA9600.
ifr220
IFU220
JEDEC TO-251AA
IRFR220
IRFU220
TA9600
TB334
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PDF
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ifr220
Abstract: No abstract text available
Text: IRFR220, IRFU220 Data Sheet 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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Original
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IRFR220,
IRFU220
TA9600.
ifr220
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PDF
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ifr220
Abstract: IFU220 IRFU220 irfr220 IRFR222 IRFU221
Text: IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 S E M I C O N D U C T O R 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V These are N-Channel enhancement mode silicon gate
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Original
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IRFR220,
IRFR221,
IRFR222,
IRFU220,
IRFU221,
IRFU222
TA9600.
ifr220
IFU220
IRFU220
irfr220
IRFR222
IRFU221
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PDF
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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Original
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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PDF
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ifr220
Abstract: IFU220 IRFR220 IRFU220 TA9600 TB334
Text: IRFR220, IRFU220 Data Sheet 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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Original
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IRFR220,
IRFU220
TA9600.
ifr220
IFU220
IRFR220
IRFU220
TA9600
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: P *3 3 S IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRFR220,
IRFR221,
IRFR222,
IRFU220,
IRFU221,
IRFU222
RFR220,
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PDF
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FR220
Abstract: IFU220 IRFU N-Channel Power MOSFETs FR 220 IRFU ir 222 IRF N-Channel Power MOSFETs RC 4565 IFU221
Text: m Ha r r is IRFR220/221/222 IRFU220/221/222 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Pa cka ges Features T O -2 5 1 A A T O P VIEW • 3.8A and 4.6A, 150V and 200V • rDS on = 0.80fi and 1.2fl >S O U R C E • Single Pulse Avalanche Energy Rated
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OCR Scan
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IRFR220/221/222
IRFU220/221/222
IRFR220,
IRFR221,
IRFR222,
IRFU220,
IRFU221
FR220
IFU220
IRFU N-Channel Power MOSFETs
FR 220
IRFU
ir 222
IRF N-Channel Power MOSFETs
RC 4565
IFU221
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PDF
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ifr220
Abstract: IFU220 IRFU221 IRFU222 ifu221 IRFR222 IFR221 ta96 IRFR220 irfu220
Text: IRFR220, IRFR221, IRFR222, IRFU220, IR FU221, IRFU222 H A R R IS SEMICONDUCTOR 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRFR220,
IRFR221,
IRFR222,
IRFU220,
FU221,
IRFU222
RFR220,
RFR221,
RFR222,
ifr220
IFU220
IRFU221
IRFU222
ifu221
IRFR222
IFR221
ta96
IRFR220
irfu220
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PDF
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ifr220
Abstract: No abstract text available
Text: IRFR220, IR FU220 Semiconductor July 1999 Data Sheet 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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IRFR220,
FU220
IRFU220
ifr220
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PDF
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