T4A 392
Abstract: T3D 01 1F 474
Text: www.johansondielectrics.com HIGH TEMPERATURE RADIAL LEADED CAPACITORS KEY FEATURES • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill Compact MLC Designs Utilizing Military Grade Ceramics
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T4A 392
T3D 01
1F 474
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T3D part marking
Abstract: marking T2B T6B MARKING CODE Sn10Pb88Ag2 T5A 392 T6A marking MARKING CODE T5E T3D 05 T4A 392
Text: www.johansondielectrics.com HIGH TEMPERATURE RADIAL LEADED CAPACITORS KEY FEATURES • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill Compact MLC Designs Utilizing Military Grade Ceramics
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Untitled
Abstract: No abstract text available
Text: Please read CAUTION and Notice in this catalog for safety. This catalog has only typical specifications. Therefore you are requested to approve our product specification or to transact the approval sheet for product specification, before your ordering. C02E8.pdf 01.7.26
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C02E8
GNM314
180arge/discharge
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08T01
Abstract: No abstract text available
Text: C02E9.pdf 02.4.27 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage storageand andoperating, operating,rating, rating,soldering solderingand andmounting, mounting,handling handling)ininthis thisPDF
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C02E9
08T01
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MARKING CODE f5
Abstract: GNM314 Diode T3D 46 T3D 45 diode t3d diode C02E10 QU1000
Text: C02E10.pdf 04.1.20 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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C02E10
1000T12
MARKING CODE f5
GNM314
Diode T3D 46
T3D 45 diode
t3d diode
QU1000
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T3D 66 diode
Abstract: KAI-11000M KAI-11000 DIODE 4008 1000X HLMP-8115 JESD22 KAI-11000CM NLPB500 NSPG500S
Text: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAI-11000M KODAK KAI-11000CM Image Sensor 4008 H x 2672 (V) Interline Transfer Progressive Scan CCD June 2, 2003 Revision 3.0 KAI-11000 Rev 3.0 www.kodak.com/go/imagers 585-722-4385 Email: imagers@kodak.com
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KAI-11000M
KAI-11000CM
KAI-11000
T3D 66 diode
KAI-11000M
DIODE 4008
1000X
HLMP-8115
JESD22
KAI-11000CM
NLPB500
NSPG500S
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T3D 62
Abstract: TRANSISTOR C 5857 ICS8761 ICS8761CY ICS8761CYLF ICS8761CYLFT ICS8761CYLN ICS8761CYLNT ICS8761CYT MS-026
Text: ICS8761 Integrated Circuit Systems, Inc. LOW VOLTAGE, LOW SKEW, PCI / PCI-X CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS8761 is a low voltage, low skew PCI / PCI-X Clock Generator and a member of the HiPerClockS HiPerClockS™ family of High Performance Clock
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ICS8761
ICS8761
20MHz
25MHz
333MHz
666MHz
333MHz,
T3D 62
TRANSISTOR C 5857
ICS8761CY
ICS8761CYLF
ICS8761CYLFT
ICS8761CYLN
ICS8761CYLNT
ICS8761CYT
MS-026
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ICS8761
Abstract: ICS8761CY ICS8761CYLF ICS8761CYLFT ICS8761CYLN ICS8761CYLNT ICS8761CYT MS-026 133.333MHZ Oscillator
Text: ICS8761 Integrated Circuit Systems, Inc. LOW VOLTAGE, LOW SKEW, PCI / PCI-X CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS8761 is a low voltage, low skew PCI / PCI-X Clock Generator and a member of the HiPerClockS HiPerClockS™family of High Performance Clock
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ICS8761
ICS8761
20MHz
25MHz
333MHz
666MHz
333MHz,
ICS8761CY
ICS8761CYLF
ICS8761CYLFT
ICS8761CYLN
ICS8761CYLNT
ICS8761CYT
MS-026
133.333MHZ Oscillator
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T3D 62
Abstract: No abstract text available
Text: ICS8761 Integrated Circuit Systems, Inc. LOW VOLTAGE, LOW SKEW, PCI / PCI-X CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS8761 is a low voltage, low skew PCI / PCI-X Clock Generator and a member of the HiPerClockS HiPerClockS™ family of High Performance Clock
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ICS8761
67MHz
38MHz
33MHz
333MHz,
66MHz,
100MHz
333MHz
20MHz
25MHz
T3D 62
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Untitled
Abstract: No abstract text available
Text: ICS8761 LOW VOLTAGE, LOW SKEW, PCI / PCI-X CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS8761 is a low voltage, low skew PCI / PCI-X Clock Generator. The ICS8761 has a selectable REF_CLK or crystal input. The REF_CLK input accepts LVCMOS or LVTTL input levels. The ICS8761 has a fully
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ICS8761
ICS8761
20MHz
25MHz
333MHz
666MHz
333MHz,
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T4A 392
Abstract: T5A 392 T3D 89 392 t4a t3d 18 101T3DW105KR4CT
Text: JOHANSON m www.johansondielectrics.com H ig h T e m p e r a t u r e R a d ia l L e a d e d C a p a c it o r s K ey F eatures -jujhuni 1— mti • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill
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T3D 76
Abstract: Rectifier t3d T3D rectifier Collmer Semiconductor 50kV T3D 6 CS451F07 CS451F12 CS452F15 CS452F25
Text: COL LME R S E M I C O N D U C T O R INC MAE D • 553 6712 □ □ □ 1 7 c15 D 1 H « C O L Fast Recovery High Voltage Silicon Rectifiers w Minimum Size 7KV to 5 0 KV V r r m Diffused Silicon Junction Low Leakage Current 100 Nanosec. Reverse Recovery
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CS451F07
CS451F12
CS452F15
CS452F25
CS453F40
CS453F50
T3D 76
Rectifier t3d
T3D rectifier
Collmer Semiconductor
50kV
T3D 6
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Untitled
Abstract: No abstract text available
Text: Thp% H EW LETT 1"HM P A C K A R D Two Channel Optical Incremental Encoder Modules Technical Data HEDS-9000 HEDS-9100 Features Description • • • • • The HEDS-9000 and the HEDS9100 series are high performance, low cost, optical incremental encoder modules. When used with
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HEDS-9000
HEDS-9100
HEDS-9000
HEDS9100
HEDS-9100
HEDS-5120
HEDS-91
HEDS-9000/9100/9200
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22810t
Abstract: 20ii2
Text: 13 10 12 M A TERIAL ENGINEERING NUMBER NUMBER wON TAPE S C - 2 2 6 -04 9 1 6 4 0 9 3 6 ENGINEERING NUMBER ON TAPE S C -2 2 8 -0 4 T STUD S IZ E «4 .126/3.20 .39/9.9 t j [ .469/11.91~ 1.39/35.1 I9 I6 4 0 0 6 I S C - 2 2 8 -0 6 ^ §9 1 6 4 0 9 3 7 S C -2 2 8 -0 6 T
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I640061
I640062
I640Q65
I640066
I640067
I9I640058
SC-228-04
SC-228-06
SC-228-08
SC-228-10
22810t
20ii2
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mpsa18
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND GROUP T3 85 14 0 19 SPRAGUE. D • ÔS13ÛS0 OGOBSTH S E M I C O N D S / ICS 1 ■ 93 D 0 3 5 9 2 X> PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain ^CBO Device
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MPSA12
MPSA13
MPSA14
MPSA18
MPSA20
MPSA25
MPSA26
MPSA27
MPSA28
MPSA29
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Untitled
Abstract: No abstract text available
Text: C jT O fc D 124-Position 4 x 6 Header 2> ^ l£) I <£><N I nimni in n ii_ in m i niinii. Ä] 7] (7 7 7 7 7 7 ^ ^ [• 86 (3.386) iH m n II U U II U U 24 (HD Ti ADD U U II II U II II U U 11 Ü II II 1918 13 12 7 U U II II II II 6 F 1 contact No. 75.82 (2.985)
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124-Position
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2N3416 Sprague
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND ! 8514019 GROUP SPRAGUE! T3 D • 0 5 1 3 0 5 0 00Q35fifci 3 ■ SE M IC O N D S / IC S 93D 03586 Ï PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain
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00Q35fifci
40ISSIPATION
1flS13fiSQ
O-226AA/STYLE
2N3416 Sprague
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T3D 96 diode
Abstract: 65039-032 T3D 91 Diode T3D 64 t3d 62 diode Diode T3D 56
Text: Tfw\ 1LEM HEW LETT PACKARD Two Channel Optical Incremental Encoder Modules Technical Data H E DS-9000 HEDS-9100 F eatures D escription • • • • • The HEDS-9000 and the HEDS9100 series are high performance, low cost, optical incremental encoder modules. W hen used with
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HEDS-9000
HEDS-9100
HEPS-5120
HEDS-91
HEDS-9000/9100/9200
T3D 96 diode
65039-032
T3D 91
Diode T3D 64
t3d 62 diode
Diode T3D 56
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BTB 600 BR
Abstract: tp5372 2N5087 2N5142 2N5221 2N5226 2N5227 2N5354 2N5355 2N5356
Text: SPRAGUE/SEMICON» GROUP 8 5 140 19 SPRAGUE. T 3 ~ T ~ M flSIHflSO D G G 3 S 1 h ' b S E M I C O N D S / ICS • 93D 0 3 5 9 6 J P _ / T'û 7-9ô PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘2N’ and ‘TP ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C
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00035U
2N5087
TP5138
TP5139
2N5142
O-226AA/STYLE
BTB 600 BR
tp5372
2N5221
2N5226
2N5227
2N5354
2N5355
2N5356
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T3D 91
Abstract: No abstract text available
Text: TUSONIX WEECON PLATE CERAMIC CAPACITORS 150/3.01 MAX Temperature Compensating types Extended Temp, Comp, types Stable types General Purpose types 100/2.54 MAX .100/2.54 n THICK 062/1 57 M A X EIA Code Z5 Y5 X5 *X7 EIA Code D E F P R S T U V .062/1 57 MAX
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in000
T3D 91
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T3D 34
Abstract: No abstract text available
Text: High-reliability capacitors WIMA Snubber Cap High performance IGBT-snubber capacitors • Low inductive construction with end-surface contacts. ■ Double-sided metallization for high pulse ratings. ■ Low-loss polypropylene dielectric. ■ Internally series connected for high
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AB028V1-14
Abstract: DDD4733 S443 CuMoCu
Text: EBAlpha 23-30 GHz Variable Gain Amplifier AB028V1-14 Features • 30 dB Gain 0.235 5.60 m m ■ 30 dB Attenuation Range 1 0.008 - (0.20 m m ) 0.225 ■ +16 dBm Output Power J (5.72 m m ) 0.450 ■ 3 dB Noise Figure ^ . 1 (11.43 m m ) 0.024 (0.61 m m ) ■ Rugged, Reliable Package
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AB028V1-14
AB028V1
10/99A
DD04734
AB028V1-14
DDD4733
S443
CuMoCu
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transistor j127
Abstract: No abstract text available
Text: Philips Semiconductors bbS3T31 OOHT^bH 512 M A P X Prodwtspecltlcatlon VHF push-pull power MOS transistor BLF245B N AMER PHILIPS/ 5 ISCRETE t iT E ]> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures
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bbS3T31
BLF245B
OT279
OT279
transistor j127
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philips catalog potentiometer
Abstract: philips Trimmer 60 pf BLF245B 2222 capacitor philips transistor j127
Text: Philips Semiconductors bb53131 002111=2 512 M APX Product specification VHF push-pull power MOS transistor BLF245B N AMER P H I L I P S / D I S C R E T E b l E ~ì PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability
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bb53131
OT279
BLF245B
MCBB26
philips catalog potentiometer
philips Trimmer 60 pf
BLF245B
2222 capacitor philips
transistor j127
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