TRANSISTOR SMD MARKING CODE NM
Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
Text: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is
|
Original
|
MC3403
2N2219
1N4148
MBC775
TRANSISTOR SMD MARKING CODE NM
philips capacitor part numbering system
SOT123 transistor marking 04
smd-transistor DATA BOOK
TRANSISTOR SMD MARKING CODE KF
TRANSISTOR SMD MARKING CODE wps
DIODE marking EG 83A
2N2219 JANTX
sot391
small signal transistor marking codes
|
PDF
|
2D222
Abstract: AB028H1-14 CuMoCu amplifier 6vdc diagram
Text: EBAlpha 23-30 GHz High Gain Amplifier AB028H1-14 Features • 36 dB Gain 0.470 11.94 mm 0.235 (5.60 mm) ■ +16 dBm Output Power 0.008 (0.20 mm) ■ 3 dB Noise Figure _ ■ Rugged, Reliable Package (11.43 mm) 1 AB028H1-14 ■ Single Voltage Operation 0.024
|
OCR Scan
|
AB028H1-14
AB028H1-14
10/99A
2D222
CuMoCu
amplifier 6vdc diagram
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 36–41 GHz High Gain Amplifier AB038H1-14 Features • 30 dB Gain PIN 1 INDICATOR 0.470 11.94 mm 0.235 (5.60 mm) ■ +16 dBm Output Power ■ 4 dB Noise Figure 0.008 (0.20 mm) 0.225 (5.72 mm) ■ Rugged, Reliable Package 0.450 (11.43 mm) ■ Single Voltage Operation
|
Original
|
AB038H1-14
9/99A
|
PDF
|
TGA2575-TS
Abstract: TGA2575
Text: TGA2575-TS Ka-Band 3 Watt Power Amplifier Applications • Military Radar Communications Product Features Functional Block Diagram Frequency Range: 32.0 – 38.0 GHz Power: 35.5 dBm Psat PAE: 22% Gain: 19 dB Return Loss: 12 dB
|
Original
|
TGA2575-TS
TGA2575-TS
TGA2575
|
PDF
|
12 volts 50 watt amplifier schematic diagram
Abstract: CuMoCu copper bond wire
Text: iTR61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC Description Features The iTR61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility Transistor PHEMT
|
Original
|
iTR61810
iTR61810
600mA
12 volts 50 watt amplifier schematic diagram
CuMoCu
copper bond wire
|
PDF
|
M177
Abstract: No abstract text available
Text: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 650 W min. ■ Gain: 19.5 dB min.
|
Original
|
STEVAL-TDR009V1
SD2932
AM01227v1
STEVAL-TDR009V1
SD2932
M177
|
PDF
|
AB038H1-14
Abstract: No abstract text available
Text: 36–41 GHz High Gain Amplifier AB038H1-14 Features • 30 dB Gain PIN 1 INDICATOR 0.470 11.94 mm 0.235 (5.60 mm) ■ +16 dBm Output Power ■ 4 dB Noise Figure 0.008 (0.20 mm) 0.225 (5.72 mm) ■ Rugged, Reliable Package 0.450 (11.43 mm) ■ Single Voltage Operation
|
Original
|
AB038H1-14
AB038H1-14
10/99A
|
PDF
|
RF TRANSISTOR 1.5 GHZ dual gate
Abstract: RMPA61800 CuMoCu
Text: RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT
|
Original
|
RMPA61800
RMPA61800
RF TRANSISTOR 1.5 GHZ dual gate
CuMoCu
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher
|
Original
|
CRF24060D
CRF24060
CRF24060D
|
PDF
|
30639
Abstract: CuMoCu Immo 65808 TH 2066.4 83348 CRF24010 CRF24010D 98737 transistor 13602
Text: CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher
|
Original
|
CRF24010D
CRF24010
CRF240
CRF24010D
30639
CuMoCu
Immo
65808
TH 2066.4
83348
98737
transistor 13602
|
PDF
|
thermal analysis and its application to high power gan hemt amplifiers
Abstract: heat and mass transfer CuMoCu MMIC doherty 113C 157C 300C Designing with Field Effect Transistors
Text: Thermal Analysis and its application to High Power GaN HEMT Amplifiers A. Prejs, S. Wood, R. Pengelly, W. Pribble Cree Inc., Durham, NC 27703 USA Abstract – A systematic and consistent approach to the thermal modeling and measurement of GaN on SiC HEMT power transistors is described. Since the power density of such
|
Original
|
|
PDF
|
95160
Abstract: CuMoCu 21864 300G 74382 85713 CRF24060 CRF24060D F240 40014
Text: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher
|
Original
|
CRF24060D
CRF24060
CRF24060D
95160
CuMoCu
21864
300G
74382
85713
F240
40014
|
PDF
|
cgh60120D
Abstract: No abstract text available
Text: CGH60120D 120 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60120D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to PN: CGH6012 0D silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
|
Original
|
CGH60120D
CGH60120D
CGH6012
|
PDF
|
circuit diagram of 4 channel long range RF based
Abstract: circuit diagram of 8 channel long range RF based raytheon gaas 6.0-18.0 GHz mmic RAYTHEON rmpa61810 copper bond wire
Text: RF Components RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRODUCT INFORMATION Description Features The Raytheon RF Components RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility
|
Original
|
RMPA61810
RMPA61810
600mA
circuit diagram of 4 channel long range RF based
circuit diagram of 8 channel long range RF based
raytheon gaas
6.0-18.0 GHz mmic
RAYTHEON
copper bond wire
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.
|
Original
|
STEVAL-TDR010V1
SD2942
STEVAL-TDR010V1
SD2942
AM01227v1
|
PDF
|
AB028V1-14
Abstract: No abstract text available
Text: 23–30 GHz Variable Gain Amplifier AB028V1-14 Features PIN 1 INDICATOR • 30 dB Gain 0.470 11.94 mm 0.235 (5.60 mm) ■ 30 dB Attenuation Range 0.008 (0.20 mm) 0.225 (5.72 mm) ■ +16 dBm Output Power 0.450 (11.43 mm) ■ 3 dB Noise Figure ■ Rugged, Reliable Package
|
Original
|
AB028V1-14
AB028V1-14
10/99A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 23–30 GHz High Gain Amplifier AB028H1-14 Features • 36 dB Gain PIN 1 INDICATOR 0.470 11.94 mm 0.235 (5.60 mm) ■ +16 dBm Output Power ■ 3 dB Noise Figure 0.008 (0.20 mm) 0.225 (5.72 mm) ■ Rugged, Reliable Package 0.450 (11.43 mm) ■ Single Voltage Operation
|
Original
|
AB028H1-14
9/99A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 23–30 GHz Variable Gain Amplifier AB028V1-14 Features • 30 dB Gain PIN 1 INDICATOR 0.470 11.94 mm 0.235 (5.60 mm) ■ 30 dB Attenuation Range ■ +16 dBm Output Power 0.008 (0.20 mm) 0.225 (5.72 mm) ■ 3 dB Noise Figure 0.450 (11.43 mm) ■ Rugged, Reliable Package
|
Original
|
AB028V1-14
9/99A
|
PDF
|
AB028V1-14
Abstract: DDD4733 S443 CuMoCu
Text: EBAlpha 23-30 GHz Variable Gain Amplifier AB028V1-14 Features • 30 dB Gain 0.235 5.60 m m ■ 30 dB Attenuation Range 1 0.008 - (0.20 m m ) 0.225 ■ +16 dBm Output Power J (5.72 m m ) 0.450 ■ 3 dB Noise Figure ^ . 1 (11.43 m m ) 0.024 (0.61 m m ) ■ Rugged, Reliable Package
|
OCR Scan
|
AB028V1-14
AB028V1
10/99A
DD04734
AB028V1-14
DDD4733
S443
CuMoCu
|
PDF
|
AA028N1-99
Abstract: No abstract text available
Text: EHAlpha 23-30 GHz Low Noise Amplifier AA028N1-99 Features • 3 dB Noise Figure -0.295 7.49 mm — 0.225 — (5.72 mm) ■ 18 dB Gain i ■ +9 dBm Output Power 0.011 0.022 (0.28 mm) I Ì0.E mm) (0.56 n T l 0.180 (4.57 mm) r ■ Rugged, Reliable Package 0.090 — I
|
OCR Scan
|
AA028N1-99
10/99A
000472b
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Avionics Wideband or narrowband amplifiers Product Features
|
Original
|
T1G4005528-FS
T1G4005528-FS
|
PDF
|
SOT333
Abstract: SOT423 sot468 thermal compound wps II TO metal package aluminum kovar SOT439 Transistor Packages sot262 SOT443 rf transistor smd pages
Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 4 RF and microwave transistor packages RF AND MICROWAVE TRANSISTOR PACKAGES handbook, halfpage The packages of electronic devices are, in general, designed to: metal cap – Protect the electronics from mechanical damage
|
Original
|
|
PDF
|
sot333
Abstract: sot390
Text: Philips Semiconductors General QUALITY Product conformance Total Quality Management The assurance of product conformance is an integral part of our quality assurance QA practice. This is achieved by: Philips Semiconductors is a Quality Company, renowned
|
Original
|
QS9000
sot333
sot390
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.
|
Original
|
STEVAL-TDR010V1
SD2942
AM01227v1
STEVAL-TDR010V1
SD2942
|
PDF
|