Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    T0204AA Search Results

    T0204AA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRH3130

    Abstract: IRH4130 IRH7130 IRH8130
    Text: PD - 90676D RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AA/AE IRH7130 100V, N-CHANNEL ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7130 IRH3130 IRH4130 IRH8130 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si)


    Original     		PDF 90676D T0-204AA/AE) IRH7130 IRH3130 IRH4130 IRH8130 1000K O-204AA MIL-STD-750, IRH3130 IRH4130 IRH7130 IRH8130

    lm1083

    Abstract: 5962-8777601XX 7703407XA IP137MAHVSMD05 5962-8767502UA 5962-8855301ux 7703401ua IP140ME-15 FM362 IP7905AG
    Text: Hi Rel Linear Guide Linear voltage regulators for high reliability applications Linear Regulator Contents Positive Fixed Voltage 2-4 Negative Fixed Voltage 5-7 Positive Adjustable Voltage Linear Regulator 8-9 Negative Adjustable Voltage Linear Regulator 9


    Original     		PDF IP117 FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 B2009 lm1083 5962-8777601XX 7703407XA IP137MAHVSMD05 5962-8767502UA 5962-8855301ux 7703401ua IP140ME-15 FM362 IP7905AG

    Untitled

    Abstract: No abstract text available
    Text: Type No. IRF232 IRF630 IRF631 IRF632 IRF633 9-16 2N6759 2N6760 IRF330 IRF331 IRF333 IRF730 IRF731 TO-204AA 42 T 02 04A A (42) TO-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) 70220 (37) T0204AA (42) TO-204AA (42) T 02 04A A (42) T0-204AA (42)


    OCR Scan     		PDF IRF232 IRF233 IRF630 IRF631 IRF632 IRF633 MTP12N18 MTP12N20 2N6759 2N6760

    Untitled

    Abstract: No abstract text available
    Text: fX S ific o n ix SMM11P20 in c o r p o r a te d P-Channel Enhancement Mode Transistor T0-204AA TO-3 BOTTOM VIEW PRODUCT SUMMARY V (BR)DSS r DS(ON) •d (V) (A) (A) -200 0.50 -1 1 1 DRAIN (CASE) 2 GATE 3 SOURCE ABSO LU TE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1


    OCR Scan     		PDF SMM11P20 T0-204AA 10peration

    transistor 206

    Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3


    OCR Scan     		PDF 2N6050 O-204AA 2N6051 2N6052 2N6285 2N6286 2N6287 O-254AA 2N7371 T0-204AA transistor 206 2N7370 AN-750 2N6057 2N6058 2N6059

    IRFP240

    Abstract: IRFP141 IRF140 IRF141 IRFP140 MTP4N45 MTP4N50
    Text: N-Channel Power MOSFETs continued 2 30 1200 300 80 C4 1.0 1.5 2 30 1200 300 80 C4 4 0.25 0.085 15 60 1600 800 300 E1 2 4 0.25 0.085 15 60 1600 800 300 E1 17 2 4 0.25 0.085 15 60 1600 800 300 E1 29 19 2 4 0.25 0.085 15 60 1600 800 300 E^l 100 24 15 2 4 0.25


    OCR Scan     		PDF bSD1130 s8888888888SS88Â T-39-01 88808S8S8088S8S8SS T0-220 O-220 O-204AA T0-204AA IRFP240 IRFP141 IRF140 IRF141 IRFP140 MTP4N45 MTP4N50

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR S7E » • 43022^1 GQ2G427 T H H A S File Number 1_PowerTransistors . GE10000-GE10009 15.77 S ilico n N-P-N Darlington Pow er T ra n sisto rs TERM INAL DESIGNATIONS 'c F U N Q E


    OCR Scan     		PDF GQ2G427 GE10000-GE10009 GE10000 GE10009 T0-204AA

    CMD8

    Abstract: No abstract text available
    Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)


    OCR Scan     		PDF DD3711b T-39-01 CMD8

    irf121

    Abstract: IRF120 IRF123
    Text: iH A R R is IRF120, IRF121, IRF122, IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs O cto be r 1997 Features Description • 8.0A and 9.2A, 80V and 100V • High Input Im pedance T h e se are N -C hannel e n h a n ce m e n t m ode silicon gate


    OCR Scan     		PDF IRF120, IRF121, IRF122, IRF123 RF123 irf121 IRF120 IRF123

    IRF120

    Abstract: IRF122
    Text: HE D I Data Sheet No. PD-9.312H 40 55452 □001 04 2 2 | T - 3 f - n INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IR F 1 2 0 IR F 1 2 1


    OCR Scan     		PDF T0-204AA IRF120, IRF121, IRF122, IRF123 IRF120 IRF122

    9323h

    Abstract: IRF420 IRF422 IRF421 g149
    Text: HE 0 I MäSSMSa O G C n ib b "1 I Data Sheet No. PD-9.323H INTERNATIONAL R E C T I F I E R V - INTERNATIONAL. RECTIFIER ? ? -// IO R REPETITIVE AVALANCHE AND dv/dt RATED' H E X F E T IRF420 IRF421 IRF422 IRF4S3 T R A N S IS T O R S :n N-CHANNEL 500 Volt, 3.0 Ohm HEXFET


    OCR Scan     		PDF IRF420 IRF421 IRF422 T0-204AA G-149 IRF420, IRF421, IRF422, IRF423 G-150 9323h g149

    2n6152

    Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90
    Text: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (*typ) (max) (pF) (max) *typ (0) *typ (A) Id (A) Vg s (V) *typ (S) Id


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 1N7000 2N61B 2N676 1N7001 2N5184 2N6164 2n6800 IXTP4N90

    lts 542

    Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B
    Text: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds


    OCR Scan     		PDF 2N6790 92cs-3374i 2N6790 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF lts 542 LTS 543 LTS 542 INTERNAL DIAGRAM 2N6756 LH0063 QPL-19500 TRANSISTOR C 557 B

    irf9110

    Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
    Text: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB


    OCR Scan     		PDF 1RF9Z32 O-220AB 1RF48 IRF034 BUZ171 O-220ftB irf120 to-204aa irf9110 SOT-123 IRF224 irf113 BUZ10 BUZ63 IRF9122 irfl33

    QPL-19500

    Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
    Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits


    OCR Scan     		PDF 2N6903 2N6903 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ QPL-19500 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760

    BUZ171

    Abstract: TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C
    Text: - 272 - f m % *± m * Vd s or £ t V £ Vg s Vd g V (V) %i fê (Ta=25,C ) ÎD Pd * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) (UA) Vd s (V) min max (V) (V) % 14 (Ta=25,C ) b(on) Ciss gfs Vg s (V) (Q> Id (A) Vg s (V) *typ (A) *typ (S) 3.0 1.0 6.0


    OCR Scan     		PDF BSI07A O-226kk BS170 O-226AA BSS123 O-236AA O-220AB BUZ171 O-220ftB irf120 TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C

    2n5764

    Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
    Text: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan     		PDF 2N6763, 2N6764 0V-100V 2N6763 2N6764 2N6796 O-2I35AF 2n5764 2N6764 JANTXV 2N6764 JANTX 2N6164 2N6901 25C31

    2N6155

    Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS


    OCR Scan     		PDF SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64

    1RF530

    Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
    Text: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)


    OCR Scan     		PDF 1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF530 1RF540 1rf520 RF543 IRF532 IRF533 IRF541 IRF542 IRF543

    IRF331R

    Abstract: IRF330R ic l00a 250M IRF332R IRF333R
    Text: _ Rugged Power MOSFETs File Number 2011 IRF330R, IRF331R, IRF332R, IRF333R Avalanche Energy Rated N-Channel Power MOSFETs 4.5A a nd 5.5A, 350V-400V ros on = 1 .0 0 and 1 .5 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRF330R, IRF331R, IRF332R, IRF333R 50V-400V IRF332R IRF333R 92CS-426S9 IRF331R IRF330R ic l00a 250M

    2N6898 JANTX

    Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
    Text: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds


    OCR Scan     		PDF 2N6898 2N6898 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6898 JANTX 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500

    SOT-123

    Abstract: IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832
    Text: - % % A f ft i Vd s or Vd g tt £ i T Vg s Ta=25'C) «É. Ig s s Id Pd * /C H * /CH (W) Vds (V) Id (nA) g fs Io(on) C ís s Coss ft B m ♦typ Vg s (V) (0) Id (A) * ty p (A) Vg s (V) *typ (S) Id (max) (max) (max) % (A) (pF) (pF) (pF) Vd s (V) % (V) P '200 ± 2 0


    OCR Scan     		PDF 2k6847 o-205af 2n6849 2n6851 OT-268 BIF548 OT-262 IRF9Z10 O-220 SOT-123 IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832

    BUZ171

    Abstract: 8UZ11 SILICONIX t02G BUZ10 BUP67 BUP68 BUP69 BUP70 BUP71
    Text: - 318 - f * A Vd s m £ tt ft Vg s %l ts Ta=25*C Id Pd Vg s (th) Id s s I g ss or € % m 4# tos(on) Vp:>= 14 (Ta=25<C ) Ip(on) Ciss g fs Coss Vd g * /CH * /CH (V) (A) (IV) V g s =0 (max) max min (nA) 500 ± 4 0 ±4 . 47 100 ±100 ±30 1000 500 3 6 1 2 10


    OCR Scan     		PDF BUP67 O-204AA BUP68 T0-204AA BUP69 O-220AB BUZ171 O-220ftB irf120 to-204aa 8UZ11 SILICONIX t02G BUZ10 BUP70 BUP71

    2sk to-92

    Abstract: VNS012A Siliconix v020 VNS009A VNS009D VNS013A VNT0080 VNT008A VNT009A
    Text: - 330 - 13=25=0 Si £ tt Vd s or € * Vd g % (V) Vg s Id * /CH (V) (A) 4# •u Pd Ig s s loss max * /CH (W) (nA) Vg s (V) Vd s (V) (kiA) (V) (V) (nA) 14 (Ta=25°C) b(on) Vd s = Vg s Ciss g fs Coss Crss ft & flt % V g s =0 (max) *typ V g s (0) (V) *typ (A)


    OCR Scan     		PDF VNS009A O-204AA VNS009D O-220AB VNS012A O-204AE VQ1006P VQ2001J VQ2001P v02004j 2sk to-92 Siliconix v020 VNS013A VNT0080 VNT008A VNT009A